Design and fabrication of electro-thermal microcantilevers for ultrafast molecular sorting and delivery

Improvements to the current state of the art in microfabricated cantilevers are investigated in order to realize enhanced functionality and increased versatility for use in ultrafast electrophoretic molecular sorting and delivery. Design rationale and fabrication process flow are described for six types of electro-thermal microcantilevers. Devices have been tailored for the process of separating mixtures of heterogeneous molecules into discrete detectable bands based on electrophoretic mobility, and delivering them to a conductive substrate using electric fields. Four device types include integrated heating elements capable of warming samples to catalyze reactions or cleaning the device for reuse. Similar devices have been shown to be capable of targeting temperatures between ambient conditions and the melting point of silicon, to within 0.1˚C precision or better. All microcantilevers types are equipped with a highly doped conductive silicon tip capable of interacting with a conductive substrate to deliver molecules under the presence of an electric field. Devices are equipped with additional electrodes to aid in sorting molecules on the surface of the probe end. Two designs contain two legs and one additional sorting electrode while four designs contain three legs and have two sorting electrodes. Devices having two sorting electrodes are designed to be capable of sorting three or more molecular species, a distinctive advancement in the state of the art. A detailed process flow of the fabrication process for all six electro-thermal cantilever designs are explained in detail.

Antimony-based type-II superlattice infrared detectors

Numerous applications within the mid- and long-wavelength infrared are driving the search for efficient and cost effective detection technologies in this regime. Theoretical calculations have predicted high performance for InAs/GaSb type-II superlattice structures, which rely on mature growth of III-V semiconductors and offer many levels of freedom in design due to band structure engineering. This work focuses on the fabrication and characterization of type-II superlattice infrared detectors. Standard UV-based photolithography was used combined with chemical wet or dry etching techniques in order to fabricate antinomy-based type-II superlattice infrared detectors. Subsequently, Fourier transform infrared spectroscopy and radiometric techniques were applied for optical characterization in order to obtain a detector's spectrum and response, as well as the overall detectivity in combination with electrical characterization. Temperature dependent electrical characterization was used to extract information about the limiting dark current processes. This work resulted in the first demonstration of an InAs/GaSb type-II superlattice infrared photodetector grown by metalorganic chemical vapor deposition. A peak detectivity of 1.6x10^9 Jones at 78 K was achieved for this device with a 11 micrometer zero cutoff wavelength. Furthermore the interband tunneling detector designed for the mid-wavelength infrared regime was studied. Similar results to those previously published were obtained.