A Framework for Assessing the Reliability of Wind Energy Conversion Systems

During the last decade, wind power generation has seen rapid development. According to the U.S. Department of Energy, achieving 20\% wind power penetration in the U.S. by 2030 will require: (i) enhancement of the transmission infrastructure, (ii) improvement of reliability and operability of wind systems and (iii) increased U.S. manufacturing capacity of wind generation equipment. This research will concentrate on improvement of reliability and operability of wind energy conversion systems (WECSs). The increased penetration of wind energy into the grid imposes new operating conditions on power systems. This change requires development of an adequate reliability framework. This thesis proposes a framework for assessing WECS reliability in the face of external disturbances, e.g., grid faults and internal component faults. The framework is illustrated using a detailed model of type C WECS - doubly fed induction generator with corresponding deterministic and random variables in a simplified grid model. Fault parameters and performance requirements essential to reliability measurements are included in the simulation. The proposed framework allows a quantitative analysis of WECS designs; analysis of WECS control schemes, e.g., fault ride-through mechanisms; discovery of key parameters that influence overall WECS reliability; and computation of WECS reliability with respect to different grid codes/performance requirements.

Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications

Efforts to push the performance of transistors for millimeter-wave and microwave applications have borne fruit through device size scaling and the use of novel material systems. III-V semiconductors and their alloys hold a distinct advantage over silicon because they have much higher electron mobility which is a prerequisite for high frequency operation. InGaAs/InP pseudomorphic heterojunction bipolar transistors (HBTs) have demonstrated fT of 765 GHz at room temperature and InP based high electron mobility transistors (HEMTs) have demonstrated fMax of 1.2 THz. The 6.1 A lattice family of InAs, GaSb, AlSb covers a wide variety of band gaps and is an attractive future material system for high speed device development. Extremely high electron mobilities ~ 30,000 cm^2 V^-1s^-1 have been achieved in modulation doped InAs-AlSb structures. The work described in this thesis involves material characterization and process development for HEMT fabrication on this material system.