Low temperature magneto-photoluminescence characterization of high purity gallium arsenide and indium phosphide

Low-temperature magneto-photoluminescence is a very powerful technique to characterize high purity GaAs and InP grown by various epitaxial techniques. These III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave devices. The large binding energy differences of acceptors in GaAs and InP make possible the identification of those impurities by low-temperature photoluminescence without the use of any magnetic field. However, the sensitivity and resolution provided by this technique rema1ns inadequate to resolve the minute binding energy differences of donors in GaAs and InP. To achieve higher sensitivity and resolution needed for the identification of donors, a magneto-photoluminescence system 1s installed along with a tunable dye laser, which provides resonant excitation. Donors 1n high purity GaAs are identified from the magnetic splittings of "two-electron" satellites of donor bound exciton transitions 1n a high magnetic field and at liquid helium temperature. This technique 1s successfully used to identify donors 1n n-type GaAs as well as 1n p-type GaAs in which donors cannot be identified by any other technique. The technique is also employed to identify donors in high purity InP. The amphoteric incorporation of Si and Ge impurities as donors and acceptors in (100), (311)A and (3ll)B GaAs grown by molecular beam epitaxy is studied spectroscopically. The hydrogen passivation of C acceptors in high purity GaAs grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) 1s investigated using photoluminescence. Si acceptors ~n MBE GaAs are also found to be passivated by hydrogenation. The instabilities in the passivation of acceptor impurities are observed for the exposure of those samples to light. Very high purity MOCVD InP samples with extremely high mobility are characterized by both electrical and optical techniques. It is determined that C is not typically incorporated as a residual acceptor ~n high purity MOCVD InP. Finally, GaAs on Si, single quantum well, and multiple quantum well heterostructures, which are fabricated from III-V semiconductors, are also measured by low-temperature photoluminescence.

In situ transmission electron microscopy ion irradiations of model iron-chromium alloys

Iron-chromium alloys are used as a model to study the microstructural evolution of defects in irradiated structural steel components of a nuclear reactor. We examine the effects of temperature and chromium concentration on the defect evolution and segregation behavior in the early stages of damage. In situ irradiations are conducted in a transmission electron microscope (TEM) at 300°C and 450°C with 150keV iron ions in single crystal Fe14Cr and Fe19Cr bicrystal to doses of 2E15 ions/cm^2. The microstructures resulting from annealing and irradiation of the alloy are characterized by analysis of TEM micrographs and diffraction patterns and compared with those of irradiated pure iron. We found the irradiation temperature to have little effect on the microstructural development. We also found that the presence of chromium in the sample leads to defect populations with small average loop size and no extended or nested loop structures, in contrast to the populations of large extended loops seen in irradiated pure iron. A very weak dependence was found on the specific chromium content of the alloy. Chromium was shown to suppress defect growth by inhibiting defect mobility in the alloy. While defects in pure iron are highly mobile and able to grow, those in the FeCr alloys remained small and relatively motionless due to the pinning effect of the chromium.