Carbon nanotube films for flexible electronics

Discovering scalable routes to fabricate large scale electronic devices on flexible substrates has been the goal of the newly emerging field of flexible macroelectronics. Thin film transistors (TFTs) have been fabricated on flexible substrates by using organic small-molecule and polymer-based materials, or thin layers of crystalline inorganic semiconductors. Recently, films of carbon nanotubes have been proposed as electronic materials with superior electrical performance due to exceptional electrical and mechanical properties of single-walled carbon nanotubes (SWCNTs). In this thesis, some aspects of recent research efforts on integrating arrays of carbon nanotubes into macroelectronic devices are described. Carbon nanotube films have two major uses for flexible macroelectronics. The first approach uses carbon nanotube thin films as active semiconducting materials in the channel of flexible TFTs. Even though, high-performance carbon nanotube thin film transistors have been realized, the electronic non-homogeneity of the as-grown carbon nanotubes in the film limits the device performance for some applications. In this thesis, the application of electrochemical functionalization on carbon nanotube films to improve the electronic homogeneity of the film is described. The effect of the crystal quartz substrates on the growth rate of carbon nanotubes, and whether this can be used to sort out as-grown carbon nanotubes by electronic type is also discussed. Finally, I argue that high density carbon nanotube films can also be used as highly conducting stretchable interconnects on mechanically flexible electronic circuits. The sheet resistance and the nature of the buckling of carbon nanotube films on flexible substrates are discussed.

Heat dissipation from carbon nano-electronics

The incorporation of graphitic compounds such as carbon nanotubes (CNTs) and graphene into nano-electronic device packaging holds much promise for waste heat management given their high thermal conductivities. However, as these graphitic materials must be used in together with other semiconductor/insulator materials, it is not known how thermal transport is affected by the interaction. Using different simulation techniques, in this thesis, we evaluate the thermal transport properties - thermal boundary conductance (TBC) and thermal conductivity - of CNTs and single-layer graphene in contact with an amorphous SiO2 (a-SiO2) substrate. First, the theoretical methodologies and concepts used in our simulations are presented. In particular, two concepts are described in detail as they are necessary for the understanding of the subsequent chapters. The first is the linear response Green-Kubo (GK) theory of thermal boundary conductance (TBC), which we develop in this thesis, and the second is the spectral energy density method, which we use to directly compute the phonon lifetimes and thermal transport coefficients. After we set the conceptual foundations, the TBC of the CNT-SiO2 interface is computed using non- equilibrium molecular dynamics (MD) simulations and the new Green-Kubo method that we have developed. Its dependence on temperature, the strength of the interaction with the substrate, and tube diameter are evaluated. To gain further insight into the phonon dynamics in supported CNTs, the scattering rates are computed using the spectral energy density (SED) method. With this method, we are able to distinguish the different scattering mechanisms (boundary and CNT-substrate phonon-phonon) and rates. The phonon lifetimes in supported CNTs are found to be reduced by contact with the substrate and we use that lifetime reduction to determine the change in CNT thermal conductivity. Next, we examine thermal transport in graphene supported on SiO2. The phonon contribution to the TBC of the graphene-SiO2 interface is computed from MD simulations and found to agree well with experimentally measured values. We derive the theory of remote phonon scattering of graphene electrons and compute the heat transfer coefficient dependence on doping level and temperature. The thermal boundary conductance from remote phonon scattering is found to be an order of magnitude smaller than that of the phonon contribution. The in-plane thermal conductivity of supported graphene is calculated from MD simulations. The experimentally measured order of magnitude reduction in thermal conductivity is reproduced in our simulations. We show that this reduction is due to the damping of the flexural (ZA) modes. By varying the interaction between graphene and the substrate, the ZA modes hybridize with the substrate Rayleigh modes and the dispersion of the hybridized modes is found to linearize in the strong coupling limit, leading to an increased thermal conductance in the composite structure.