3 resultados para Energy density

em Illinois Digital Environment for Access to Learning and Scholarship Repository


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Miniaturization of power generators to the MEMS scale, based on the hydrogen-air fuel cell, is the object of this research. The micro fuel cell approach has been adopted for advantages of both high power and energy densities. On-board hydrogen production/storage and an efficient control scheme that facilitates integration with a fuel cell membrane electrode assembly (MEA) are key elements for micro energy conversion. Millimeter-scale reactors (ca. 10 µL) have been developed, for hydrogen production through hydrolysis of CaH2 and LiAlH4, to yield volumetric energy densities of the order of 200 Whr/L. Passive microfluidic control schemes have been implemented in order to facilitate delivery, self-regulation, and at the same time eliminate bulky auxiliaries that run on parasitic power. One technique uses surface tension to pump water in a microchannel for hydrolysis and is self-regulated, based on load, by back pressure from accumulated hydrogen acting on a gas-liquid microvalve. This control scheme improves uniformity of power delivery during long periods of lower power demand, with fast switching to mass transport regime on the order of seconds, thus providing peak power density of up to 391.85 W/L. Another method takes advantage of water recovery by backward transport through the MEA, of water vapor that is generated at the cathode half-cell reaction. This regulation-free scheme increases available reactor volume to yield energy density of 313 Whr/L, and provides peak power density of 104 W/L. Prototype devices have been tested for a range of duty periods from 2-24 hours, with multiple switching of power demand in order to establish operation across multiple regimes. Issues identified as critical to the realization of the integrated power MEMS include effects of water transport and byproduct hydrate swelling on hydrogen production in the micro reactor, and ambient relative humidity on fuel cell performance.

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The incorporation of graphitic compounds such as carbon nanotubes (CNTs) and graphene into nano-electronic device packaging holds much promise for waste heat management given their high thermal conductivities. However, as these graphitic materials must be used in together with other semiconductor/insulator materials, it is not known how thermal transport is affected by the interaction. Using different simulation techniques, in this thesis, we evaluate the thermal transport properties - thermal boundary conductance (TBC) and thermal conductivity - of CNTs and single-layer graphene in contact with an amorphous SiO2 (a-SiO2) substrate. First, the theoretical methodologies and concepts used in our simulations are presented. In particular, two concepts are described in detail as they are necessary for the understanding of the subsequent chapters. The first is the linear response Green-Kubo (GK) theory of thermal boundary conductance (TBC), which we develop in this thesis, and the second is the spectral energy density method, which we use to directly compute the phonon lifetimes and thermal transport coefficients. After we set the conceptual foundations, the TBC of the CNT-SiO2 interface is computed using non- equilibrium molecular dynamics (MD) simulations and the new Green-Kubo method that we have developed. Its dependence on temperature, the strength of the interaction with the substrate, and tube diameter are evaluated. To gain further insight into the phonon dynamics in supported CNTs, the scattering rates are computed using the spectral energy density (SED) method. With this method, we are able to distinguish the different scattering mechanisms (boundary and CNT-substrate phonon-phonon) and rates. The phonon lifetimes in supported CNTs are found to be reduced by contact with the substrate and we use that lifetime reduction to determine the change in CNT thermal conductivity. Next, we examine thermal transport in graphene supported on SiO2. The phonon contribution to the TBC of the graphene-SiO2 interface is computed from MD simulations and found to agree well with experimentally measured values. We derive the theory of remote phonon scattering of graphene electrons and compute the heat transfer coefficient dependence on doping level and temperature. The thermal boundary conductance from remote phonon scattering is found to be an order of magnitude smaller than that of the phonon contribution. The in-plane thermal conductivity of supported graphene is calculated from MD simulations. The experimentally measured order of magnitude reduction in thermal conductivity is reproduced in our simulations. We show that this reduction is due to the damping of the flexural (ZA) modes. By varying the interaction between graphene and the substrate, the ZA modes hybridize with the substrate Rayleigh modes and the dispersion of the hybridized modes is found to linearize in the strong coupling limit, leading to an increased thermal conductance in the composite structure.

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Systematic low-temperature measurements of the thermal conductivity, specific heat, dielectric constant, and temperature-dependent ultrasound velocity have been made on a single piece of vitreous silica. These measurements were repeated after fast neutron irradiation of the material. It was found that the irradiation produced changes of the same relative magnitude in the low-temperature excess specific heat C , the thermal conductivity K, ex and the anomalous temperature dependence of the ultrasound velocity Deltav/v. A corresponding change in the temperature dependent dielectric constant was not observed. It is therefore likely that K and Deltav/v are determined by the same localized excitations responsible for C , but the temperature dependence of the dielectric constant may have a different, though possibly related, origin. Furthermore, a consistent account for the measured C , K, ex and Deltav/v of unirradiated silica is given by the tunneling-state model with a single, energy-dependent density of states. Changes in these three properties due to irradiation can be explained by altering only the density of tunneling states incorporated in the model.