Fiber Bragg Gratings Strain Sensors for Railway Applications

Fiber optical sensors have played an important role in applications for monitoring the health of civil infrastructures, such as bridges, oil rigs, and railroads. Due to the reduction in cost of fiber-optic components and systems, fiber optical sensors have been studied extensively for their higher sensitivity, precision and immunity to electrical interference compared to their electrical counterparts. A fiber Bragg grating (FBG) strain sensor has been employed for this study to detect and distinguish normal and lateral loads on rail tracks. A theoretical analysis of the relationship between strain and displacement under vertical and horizontal strains on an aluminum beam has been performed, and the results are in excellent agreement with the measured strain data. Then a single FBG sensor system with erbium-doped fiber amplifier broadband source has been carried out. Force and temperature applied on the system have resulted in changes of 0.05 nm per 50 με and 0.094 nm per 10 oC at the center wavelength of the FBG. Furthermore, a low cost fiber-optic sensor system with a distributed feedback (DFB) laser as the light source has been implemented. We show that it has superior noise and sensitivity performances compared to strain gauge sensors. The design has been extended to accommodate multiple sensors with negligible cross talk. When two cascaded sensors on a rail track section are tested, strain readings of the sensor 20 inches away from the position of applied force decay to one seventh of the data of the sensor at the applied force location. The two FBG sensor systems can detect 1 ton of vertical load with a square wave pattern and 0.1 ton of lateral loads (3 tons and 0.5 ton, respectively, for strain gauges). Moreover, a single FBG sensor has been found capable of detecting and distinguishing lateral and normal strains applied at different frequencies. FBG sensors are promising alternatives to electrical sensors for their high sensitivity,ease of installation, and immunity to electromagnetic interferences.

Core-level photoemission investigations of the CDTE(100) and INSB(100) surface and interfacial structures

Photoemission techniques, utilizing a synchrotron light source, were used to analyze the clean (100) surfaces of the zinc-blende semiconductor materials CdTe and InSb. Several interfacial systems involving the surfaces of these materials were also studied, including the CdTe(lOO)-Ag interface, the CdTe(lOO)-Sb system, and the InSb(lOO)-Sn interface. High-energy electron diffraction was also employed to acquire information about of surface structure. A one-domain (2xl) structure was observed for the CdTe(lOO) surface. Analysis of photoemission spectra of the Cd 4d core level for this surface structure revealed two components resulting from Cd surface atoms. The total intensity of these components accounts for a full monolayer of Cd atoms on the surface. A structural model is discussed commensurate with these results. Photoemission spectra of the Cd and Te 4d core levels indicate that Ag or Sb deposited on the CdTe(l00)-(2xl) surface at room temperature do not bound strongly to the surface Cd atoms. The room temperature growth characteristics for these two elements on the CdTe(lOO)-(2xl) are discussed. The growth at elevated substrate temperatures was also studied for Sb deposition. The InSb(lOO) surface differed from the CdTe(lOO) surface. Using molecular beam epitaxy, several structures could be generated for the InSb(lOO) surface, including a c(8x2), a c(4x4), an asymmetric (lx3), a symmetric (lx3), and a (lxl). Analysis of photoemission intensities and line shapes indicates that the c(4x4) surface is terminated with 1-3/4 monolayers of Sb atoms. The c(8x2) surface is found to be terminated with 3/4 monolayer of In atoms. Structural models for both of these surfaces are proposed based upon the photoemission results and upon models of the similar GaAs(lOO) structures. The room temperature growth characteristics of grey Sn on the lnSb(lOO)-c(4x4) and InSb(l00)-c(8x2) surfaces were studied with photoemission. The discontinuity in the valence band maximum for this semiconductor heterojunction system is measured to be 0.40 eV, independent of the starting surface structure and stoichiometry. This result is reconciled with theoretical predictions for heterostructure behavior.