Growth and application of planar III-V semiconductor nanowires grown with MOCVD

The semiconductor nanowire has been widely studied over the past decade and identified as a promising nanotechnology building block with application in photonics and electronics. The flexible bottom-up approach to nanowire growth allows for straightforward fabrication of complex 1D nanostructures with interesting optical, electrical, and mechanical properties. III-V nanowires in particular are useful because of their direct bandgap, high carrier mobility, and ability to form heterojunctions and have been used to make devices such as light-emitting diodes, lasers, and field-effect transistors. However, crystal defects are widely reported for III-V nanowires when grown in the common out-of-plane <111>B direction. Furthermore, commercialization of nanowires has been limited by the difficulty of assembling nanowires with predetermined position and alignment on a wafer-scale. In this thesis, planar III-V nanowires are introduced as a low-defect and integratable nanotechnology building block grown with metalorganic chemical vapor deposition. Planar GaAs nanowires grown with gold seed particles self-align along the <110> direction on the (001) GaAs substrate. Transmission electron microscopy reveals that planar GaAs nanowires are nearly free of crystal defects and grow laterally and epitaxially on the substrate surface. The nanowire morphology is shown to be primarily controlled through growth temperature and an ideal growth window of 470 +\- 10 °C is identified for planar GaAs nanowires. Extension of the planar growth mode to other materials is demonstrated through growth of planar InAs nanowires. Using a sacrificial layer, the transfer of planar GaAs nanowires onto silicon substrates with control over the alignment and position is presented. A metal-semiconductor field-effect transistor fabricated with a planar GaAs nanowire shows bulk-like low-field electron transport characteristics with high mobility. The aligned planar geometry and excellent material quality of planar III-V nanowires may lead to highly integrated III-V nanophotonics and nanoelectronics.

Studies of turbulent flows in continuous casting of steel with and without magnetic field

This thesis develops and tests various transient and steady-state computational models such as direct numerical simulation (DNS), large eddy simulation (LES), filtered unsteady Reynolds-averaged Navier-Stokes (URANS) and steady Reynolds-averaged Navier-Stokes (RANS) with and without magnetic field to investigate turbulent flows in canonical as well as in the nozzle and mold geometries of the continuous casting process. The direct numerical simulations are first performed in channel, square and 2:1 aspect rectangular ducts to investigate the effect of magnetic field on turbulent flows. The rectangular duct is a more practical geometry for continuous casting nozzle and mold and has the option of applying magnetic field either perpendicular to broader side or shorter side. This work forms the part of a graphic processing unit (GPU) based CFD code (CU-FLOW) development for magnetohydrodynamic (MHD) turbulent flows. The DNS results revealed interesting effects of the magnetic field and its orientation on primary, secondary flows (instantaneous and mean), Reynolds stresses, turbulent kinetic energy (TKE) budgets, momentum budgets and frictional losses, besides providing DNS database for two-wall bounded square and rectangular duct MHD turbulent flows. Further, the low- and high-Reynolds number RANS models (k-ε and Reynolds stress models) are developed and tested with DNS databases for channel and square duct flows with and without magnetic field. The MHD sink terms in k- and ε-equations are implemented as proposed by Kenjereš and Hanjalić using a user defined function (UDF) in FLUENT. This work revealed varying accuracies of different RANS models at different levels. This work is useful for industry to understand the accuracies of these models, including continuous casting. After realizing the accuracy and computational cost of RANS models, the steady-state k-ε model is then combined with the particle image velocimetry (PIV) and impeller probe velocity measurements in a 1/3rd scale water model to study the flow quality coming out of the well- and mountain-bottom nozzles and the effect of stopper-rod misalignment on fluid flow. The mountain-bottom nozzle was found more prone to the longtime asymmetries and higher surface velocities. The left misalignment of stopper gave higher surface velocity on the right leading to significantly large number of vortices forming behind the nozzle on the left. Later, the transient and steady-state models such as LES, filtered URANS and steady RANS models are combined with ultrasonic Doppler velocimetry (UDV) measurements in a GaInSn model of typical continuous casting process. LES-CU-LOW is the fastest and the most accurate model owing to much finer mesh and a smaller timestep. This work provided a good understanding on the performance of these models. The behavior of instantaneous flows, Reynolds stresses and proper orthogonal decomposition (POD) analysis quantified the nozzle bottom swirl and its importance on the turbulent flow in the mold. Afterwards, the aforementioned work in GaInSn model is extended with electromagnetic braking (EMBr) to help optimize a ruler-type brake and its location for the continuous casting process. The magnetic field suppressed turbulence and promoted vortical structures with their axis aligned with the magnetic field suggesting tendency towards 2-d turbulence. The stronger magnetic field at the nozzle well and around the jet region created large scale and lower frequency flow behavior by suppressing nozzle bottom swirl and its front-back alternation. Based on this work, it is advised to avoid stronger magnetic field around jet and nozzle bottom to get more stable and less defect prone flow.