4 resultados para post conflict work

em Glasgow Theses Service


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This thesis examines how married couples bought and created a modern home for their families in suburban Glasgow between 1945-1975. New homeowners were on the cusp of the middle-classes, buying in a climate of renters. As they progressed through the family lifecycle women’s return to work meant they became more comfortably ensconced within the middle-classes. Engaged with a process of homemaking through consumption and labour, couples transformed their houses into homes that reflected themselves and their social status. The interior of the home was focused on as a site of social relations. Marriage in the suburbs was one of collaboration as each partner performed distinct gender roles. The idea of a shared home was investigated and the story of ‘we’ rather than ‘I’ emerged from both testimony and contemporary literature. This thesis considers decision-making, labour and leisure to show the ways in which experiences of home were gendered. What emerged was that women’s work as everyday and mundane was overlooked and undervalued while husband’s extraordinary contributions in the form of DIY came to the fore. The impact of wider culture intruded upon the ‘private’ home as we see they ways in which the position of women in society influences their relationship to the home and their family. In the suburbs of post-war Glasgow women largely left the workforce to stay at home with their children. Mothers popped in and out of each other houses for tea and a blether, creating a homosocial network that was sociable and supportive unique to this time in their lives and to this historical context. Daily life was negotiated within the walls of the modern home. The inter-war suburbs of Glasgow needed modernising to post-war standards of modern living. ‘Modern’ was both an aesthetic and an engagement with new technologies within the house. Both middle and working-class practices for room use were found through the keeping of a ‘good’ or best room and the determination of couples to eat in their small kitchenettes. As couples updated their kitchen, the fitted kitchen revealed contemporary notions of modern décor, as kitchens became bright yellow with blue Formica worktops. The modern home was the evolution of existing ideas of modern combined with new standards of living. As Glasgow homeowners constructed their modern home what became evident was that this was a shared process and as a couple they placed their children central to all aspects of their lives to create not only a modern home, but that this was first and foremost a family home

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Conventional Si complementary-metal-oxide-semiconductor (CMOS) scaling is fast approaching its limits. The extension of the logic device roadmap for future enhancements in transistor performance requires non-Si materials and new device architectures. III-V materials, due to their superior electron transport properties, are well poised to replace Si as the channel material beyond the 10nm technology node to mitigate the performance loss of Si transistors from further reductions in supply voltage to minimise power dissipation in logic circuits. However several key challenges, including a high quality dielectric/III-V gate stack, a low-resistance source/drain (S/D) technology, heterointegration onto a Si platform and a viable III-V p-metal-oxide-semiconductor field-effect-transistor (MOSFET), need to be addressed before III-Vs can be employed in CMOS. This Thesis specifically addressed the development and demonstration of planar III-V p-MOSFETs, to complement the n-MOSFET, thereby enabling an all III-V CMOS technology to be realised. This work explored the application of InGaAs and InGaSb material systems as the channel, in conjunction with Al2O3/metal gate stacks, for p-MOSFET development based on the buried-channel flatband device architecture. The body of work undertaken comprised material development, process module development and integration into a robust fabrication flow for the demonstration of p-channel devices. The parameter space in the design of the device layer structure, based around the III-V channel/barrier material options of Inx≥0.53Ga1-xAs/In0.52Al0.48As and Inx≥0.1Ga1-xSb/AlSb, was systematically examined to improve hole channel transport. A mobility of 433 cm2/Vs, the highest room temperature hole mobility of any InGaAs quantum-well channel reported to date, was obtained for the In0.85Ga0.15As (2.1% strain) structure. S/D ohmic contacts were developed based on thermally annealed Au/Zn/Au metallisation and validated using transmission line model test structures. The effects of metallisation thickness, diffusion barriers and de-oxidation conditions were examined. Contacts to InGaSb-channel structures were found to be sensitive to de-oxidation conditions. A fabrication process, based on a lithographically-aligned double ohmic patterning approach, was realised for deep submicron gate-to-source/drain gap (Lside) scaling to minimise the access resistance, thereby mitigating the effects of parasitic S/D series resistance on transistor performance. The developed process yielded gaps as small as 20nm. For high-k integration on GaSb, ex-situ ammonium sulphide ((NH4)2S) treatments, in the range 1%-22%, for 10min at 295K were systematically explored for improving the electrical properties of the Al2O3/GaSb interface. Electrical and physical characterisation indicated the 1% treatment to be most effective with interface trap densities in the range of 4 - 10×1012cm-2eV-1 in the lower half of the bandgap. An extended study, comprising additional immersion times at each sulphide concentration, was further undertaken to determine the surface roughness and the etching nature of the treatments on GaSb. A number of p-MOSFETs based on III-V-channels with the most promising hole transport and integration of the developed process modules were successfully demonstrated in this work. Although the non-inverted InGaAs-channel devices showed good current modulation and switch-off characteristics, several aspects of performance were non-ideal; depletion-mode operation, modest drive current (Id,sat=1.14mA/mm), double peaked transconductance (gm=1.06mS/mm), high subthreshold swing (SS=301mV/dec) and high on-resistance (Ron=845kΩ.μm). Despite demonstrating substantial improvement in the on-state metrics of Id,sat (11×), gm (5.5×) and Ron (5.6×), inverted devices did not switch-off. Scaling gate-to-source/drain gap (Lside) from 1μm down to 70nm improved Id,sat (72.4mA/mm) by a factor of 3.6 and gm (25.8mS/mm) by a factor of 4.1 in inverted InGaAs-channel devices. Well-controlled current modulation and good saturation behaviour was observed for InGaSb-channel devices. In the on-state In0.3Ga0.7Sb-channel (Id,sat=49.4mA/mm, gm=12.3mS/mm, Ron=31.7kΩ.μm) and In0.4Ga0.6Sb-channel (Id,sat=38mA/mm, gm=11.9mS/mm, Ron=73.5kΩ.μm) devices outperformed the InGaAs-channel devices. However the devices could not be switched off. These findings indicate that III-V p-MOSFETs based on InGaSb as opposed to InGaAs channels are more suited as the p-channel option for post-Si CMOS.

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Porous polymer particles are used in an extraordinarily wide range of advanced and everyday applications, from combinatorial chemistry, solid-phase organic synthesis and polymer-supported reagents, to environmental analyses and the purification of drinking water. The installation and exploitation of functional chemical handles on the particles is often a prerequisite for their successful exploitation, irrespective of the application and the porous nature of the particles. New methodology for the chemical modification of macroreticular polymers is the primary focus of the work presented in this thesis. Porous polymer microspheres decorated with a diverse range of functional groups were synthesised by the post-polymerisation chemical modification of beaded polymers via olefin cross metathesis. The polymer microspheres were prepared by the precipitation polymerisation of divinylbenzene in porogenic (pore-forming) solvents; the olefin cross-metathesis (CM) functionalisation reactions exploited the pendent (polymer-bound) vinyl groups that were not consumed by polymerisation. Olefin CM reactions involving the pendent vinyl groups were performed in dichloromethane using second-generation Grubbs catalyst (Grubbs II), and a wide range of coupling partners used. The results obtained indicate that high quality, porous polymer microspheres synthesised by precipitation polymerisation in near-θ solvents can be functionalised by olefin CM under very mild conditions to install a diverse range of chemical functionalities into a common polydivinylbenzene precursor. Gel-type polymer microspheres were prepared by the precipitation copolymerisation reaction of divinylbenzene and allyl methacrylate in neat acetonitrile. The unreacted pendent vinyl groups that were not consumed by polymerisation were subjected to internal and external olefin metathesis-based hypercrosslinking reactions. Internal hypercrosslinking was carried out by using ring-closing metathesis (RCM) reactions in toluene using Grubbs II catalyst. Under these conditions, hypercrosslinked (HXL) polymers with specific surface areas around 500 m2g-1 were synthesised. External hypercrosslinking was attempted by using CM/RCM in the presence of a multivinyl coupling partner in toluene using second-generation Hoveyda-Grubbs catalyst. The results obtained indicate that no HXL polymers were obtained. However, during the development of this methodology, a new type of polymerisation was discovered with tetraallylorthosilicate as monomer.

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This socio-legal thesis has explored the factors responsible for explaining whether and how redress mechanisms control bureaucratic decision-making. The research considered the three principal institutions of administrative justice: courts, tribunals, and ombudsman schemes. The field setting was the local authority education area and the thesis examined bureaucratic decision-making about admissions to school, home-to-school transport, and Special Educational Needs (SEN). The thesis adopted a qualitative approach, using interviews and documentary research, within a multiple embedded case study design. The intellectual foundations of the research were inter-disciplinary, cutting across law, socio-legal studies, public administration, organization studies, and social policy. The thesis drew on these scholarly fields to explore the nature of bureaucratic decision-making, the extent to which it can be controlled and the way that learning occurs in bureaucracies and, finally, the extent to which redress mechanisms might exercise control. The concept of control was studied across all its dimensions – in relation both to ex post control in specific cases and the more challenging notion of ex ante or structuring control. The aim of the thesis was not to measure the prevalence of bureaucratic control by redress mechanisms, but to understand the factors that might explain its presence or absence in a particular area. The findings of the research have allowed for a number of analytical refinements and extensions to be made to existing theoretical and empirical understandings. 14 factors, along with 87 supporting propositions, have been set out with the aim of making empirically derived suggestions which can be followed up in future research. In terms of the thesis’ contribution to existing knowledge, its comparative focus and its emphasis on the broad notion of control offered the potential for new insights to be developed. Overall, the thesis claims to have made three contributions to the conceptual framework for understanding the exercise of control by redress mechanisms: it emphasizes the importance of ‘feedback’ in relation to the nature of the cases referred to redress mechanisms; it calls attention to the structure of bureaucratic decision-making as well as its normative character; and it discusses how the operational modes of redress mechanisms relate to their control functions.