2 resultados para well-ordered bulk heterojunctions solar cells

em Universidade Complutense de Madrid


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We have deposited intrinsic amorphous silicon (a-Si:H) using the electron cyclotron resonance (ECR) chemical vapor deposition technique in order to analyze the a-Si:H/c-Si heterointerface and assess the possible application in heterojunction with intrinsic thin layer (HIT) solar cells. Physical characterization of the deposited films shows that the hydrogen content is in the 15-30% range, depending on deposition temperature. The optical bandgap value is always comprised within the range 1.9- 2.2 eV. Minority carrier lifetime measurements performed on the heterostructures reach high values up to 1.3 ms, indicating a well-passivated a-Si:H/c-Si heterointerface for deposition temperatures as low as 100°C. In addition, we prove that the metal-oxide- semiconductor conductance method to obtain interface trap distribution can be applied to the a-Si:H/c-Si heterointerface, since the intrinsic a-Si:H layer behaves as an insulator at low or negative bias. Values for the minimum of D_it as low as 8 × 10^10 cm^2 · eV^-1 were obtained for our samples, pointing to good surface passivation properties of ECR-deposited a-Si:H for HIT solar cell applications.

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We study theoretically the effect of a new type of blocklike positional disorder on the effective electromagnetic properties of one-dimensional chains of resonant, high-permittivity dielectric particles, where particles are arranged into perfectly well-ordered blocks whose relative position is a random variable. This creates a finite order correlation length that mimics the situation encountered in metamaterials fabricated through self-assembled techniques, whose structures often display short-range order between near neighbors but long-range disorder, due to stacking defects. Using a spectral theory approach combined with a principal component statistical analysis, we study, in the long-wavelength regime, the evolution of the electromagnetic response when the composite filling fraction and the block size are changed. Modifications in key features of the resonant response (amplitude, width, etc.) are investigated, showing a regime transition for a filling fraction around 50%.