2 resultados para response theory

em Universidade Complutense de Madrid


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With the re-emergence of insurgency tied to terrorism, governments need to strategically manage their communications. This paper analyzes the effect of the Spanish government’s messaging in the face of the Madrid bombing of March 11, 2004: unlike what happened with the 9/11 bombings in the USA and the 7/07 London attacks, the Spanish media did not support the government’s framing of the events. Taking framing as a strategic action in a discursive form (Pan & Kosicki, 2003), and in the context of the attribution theory of responsibilities, this research uses the “cascading activation” model (Entman, 2003, 2004) to explore how a framing contest was generated in the press. Analysis of the coverage shows that the intended government frame triggered a battle among the different major newspapers, leading editorials to shift their frame over the four days prior to the national elections. This research analyzes strategic contests in framing processes and contributes insight into the interactions among the different sides (government, parties, media, and citizens) to help bring about an understanding of the rebuttal effect of the government’s intended frame. It also helps to develop an understanding of the role of the media and the influence of citizens’ frames on media content.

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Silicon samples were implanted with high Ti doses and subsequently processed with the pulsed-laser melting technique. The electronic transport properties in the 15–300 K range and the room temperature spectral photoresponse at energies over the bandgap were measured. Samples with Ti concentration below the insulator-metal (I-M) transition limit showed a progressive reduction of the carrier lifetime in the implanted layer as Ti dose is increased. However, when the Ti concentration exceeded this limit, an extraordinary recovery of the photoresponse was measured. This result supports the theory of intermediate band materials and is of utmost relevance for photovoltaic cells and Si-based detectors.