Signal Processing Techniques for Chipless UWB RFID Thermal Threshold Detector Detection.

This letter presents signal processing techniques to detect a passive thermal threshold detector based on a chipless time-domain ultrawideband (UWB) radio frequency identification (RFID) tag. The tag is composed by a UWB antenna connected to a transmission line, in turn loaded with a biomorphic thermal switch. The working principle consists of detecting the impedance change of the thermal switch. This change occurs when the temperature exceeds a threshold. A UWB radar is used as the reader. The difference between the actual time sample and a reference signal obtained from the averaging of previous samples is used to determine the switch transition and to mitigate the interferences derived from clutter reflections. A gain compensation function is applied to equalize the attenuation due to propagation loss. An improved method based on the continuous wavelet transform with Morlet wavelet is used to overcome detection problems associated to a low signal-to-noise ratio at the receiver. The average delay profile is used to detect the tag delay. Experimental measurements up to 5 m are obtained.

Single Events in a COTS Soft-Error Free SRAM at Low Bias Voltage Induced by 15-MeV Neutrons

This paper presents an experimental study of the sensitivity to 15-MeV neutrons of Advanced Low Power SRAMs (A-LPSRAM) at low bias voltage little above the threshold value that allows the retention of data. This family of memories is characterized by a 3D structure to minimize the area penalty and to cope with latchups, as well as by the presence of integrated capacitors to hinder the occurrence of single event upsets. In low voltage static tests, classical single event upsets were a minor source of errors, but other unexpected phenomena such as clusters of bitflips and hard errors turned out to be the origin of hundreds of bitflips. Besides, errors were not observed in dynamic tests at nominal voltage. This behavior is clearly different than that of standard bulk CMOS SRAMs, where thousands of errors have been reported.