Subband energy in two-band δ-doped semiconductors

We study electron dynamics in a two-band δ-doped semiconductor within the envelope-function approximation. Using a simple parametrization of the confining potential arising from the ionized donors in the δ -doping layer, we are able to find exact solutions of the Dirac-type equation describing the coupling of host bands. As an application we then consider Si δ -doped GaAs. In particular we find that the ground subband energy scales as a power law of the Si concentration per unit area in a wide range of doping levels. In addition, the coupling of host bands leads to a depression of the subband energy due to nonparabolicity effects.

Global relativistic folding optical potential and the relativistic Green's function model

Optical potentials provide critical input for calculations on a wide variety of nuclear reactions, in particular, for neutrino-nucleus reactions, which are of great interest in the light of the new neutrino oscillation experiments. We present the global relativistic folding optical potential (GRFOP) fits to elastic proton scattering data from C-12 nucleus at energies between 20 and 1040 MeV. We estimate observables, such as the differential cross section, the analyzing power, and the spin rotation parameter, in elastic proton scattering within the relativistic impulse approximation. The new GRFOP potential is employed within the relativistic Green's function model for inclusive quasielastic electron scattering and for (anti) neutrino-nucleus scattering at MiniBooNE kinematics.