High-speed polynomial basis multipliers over GF(2(m)) for special pentanomial.

Efficient hardware implementations of arithmetic operations in the Galois field are highly desirable for several applications, such as coding theory, computer algebra and cryptography. Among these operations, multiplication is of special interest because it is considered the most important building block. Therefore, high-speed algorithms and hardware architectures for computing multiplication are highly required. In this paper, bit-parallel polynomial basis multipliers over the binary field GF(2(m)) generated using type II irreducible pentanomials are considered. The multiplier here presented has the lowest time complexity known to date for similar multipliers based on this type of irreducible pentanomials.

Single Events in a COTS Soft-Error Free SRAM at Low Bias Voltage Induced by 15-MeV Neutrons

This paper presents an experimental study of the sensitivity to 15-MeV neutrons of Advanced Low Power SRAMs (A-LPSRAM) at low bias voltage little above the threshold value that allows the retention of data. This family of memories is characterized by a 3D structure to minimize the area penalty and to cope with latchups, as well as by the presence of integrated capacitors to hinder the occurrence of single event upsets. In low voltage static tests, classical single event upsets were a minor source of errors, but other unexpected phenomena such as clusters of bitflips and hard errors turned out to be the origin of hundreds of bitflips. Besides, errors were not observed in dynamic tests at nominal voltage. This behavior is clearly different than that of standard bulk CMOS SRAMs, where thousands of errors have been reported.