Measurement limitations in knife-edge tomographic phase retrieval of focused IR laser beams

An experimental setup to measure the three-dimensional phase-intensity distribution of an infrared laser beam in the focal region has been presented. It is based on the knife-edge method to perform a tomographic reconstruction and on a transport of intensity equation-based numerical method to obtain the propagating wavefront. This experimental approach allows us to characterize a focalized laser beam when the use of image or interferometer arrangements is not possible. Thus, we have recovered intensity and phase of an aberrated beam dominated by astigmatism. The phase evolution is fully consistent with that of the beam intensity along the optical axis. Moreover, this method is based on an expansion on both the irradiance and the phase information in a series of Zernike polynomials. We have described guidelines to choose a proper set of these polynomials depending on the experimental conditions and showed that, by abiding these criteria, numerical errors can be reduced.

Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap

Silicon samples were implanted with high Ti doses and subsequently processed with the pulsed-laser melting technique. The electronic transport properties in the 15–300 K range and the room temperature spectral photoresponse at energies over the bandgap were measured. Samples with Ti concentration below the insulator-metal (I-M) transition limit showed a progressive reduction of the carrier lifetime in the implanted layer as Ti dose is increased. However, when the Ti concentration exceeded this limit, an extraordinary recovery of the photoresponse was measured. This result supports the theory of intermediate band materials and is of utmost relevance for photovoltaic cells and Si-based detectors.

Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signatures

We report the observation of the insulator-to-metal transition in crystalline silicon samples supersaturated with vanadium. Ion implantation followed by pulsed laser melting and rapid resolidification produce high quality single-crystalline silicon samples with vanadium concentrations that exceed equilibrium values in more than 5 orders of magnitude. Temperature-dependent analysis of the conductivity and Hall mobility values for temperatures from 10K to 300K indicate that a transition from an insulating to a metallic phase is obtained at a vanadium concentration between 1.1 × 10^(20) and 1.3 × 10^(21) cm^(−3) . Samples in the insulating phase present a variable-range hopping transport mechanism with a Coulomb gap at the Fermi energy level. Electron wave function localization length increases from 61 to 82 nm as the vanadium concentration increases in the films, supporting the theory of impurity band merging from delocalization of levels states. On the metallic phase, electronic transport present a dispersion mechanism related with the Kondo effect, suggesting the presence of local magnetic moments in the vanadium supersaturated silicon material.

Thermally induced all-optical inverter and dynamic hysteresis loops in graphene oxide dispersions

We experimentally study the temporal dynamics of amplitude-modulated laser beams propagating through a water dispersion of graphene oxide sheets in a fiber-to-fiber U-bench. Nonlinear refraction induced in the sample by thermal effects leads to both phase reversing of the transmitted signals and dynamic hysteresis in the input- output power curves. A theoretical model including beam propagation and thermal lensing dynamics reproduces the experimental findings. © 2015 Optical Society of America.