Diketonylpyridinium cations as a support of new ionic liquid crystals and ion-conductive materials: analysis of counter-ion effects

Ionic liquid crystals (ILCs) allow the combination of the high ionic conductivity of ionic liquids (ILs) with the supramolecular organization of liquid crystals (LCs). ILCs salts were obtained by the assembly of long-chained diketonylpyridinium cations of the type [HOO^(R(n)pyH)] + and BF_(4)^(-) , ReO_(4)^(-), NO_(3)^(-), CF_(3)SO_(3)^(-), CuCl_(4)^(2-) counter-ions. We have studied the thermal behavior of five series of compounds by differential scanning calorimetry (DSC) and hot stage polarized light optical microscopy (POM). All materials show thermotropic mesomorphism as well as crystalline polymorphism. X-ray diffraction of the [HOO^(R(12)pyH)][ReO_(4)] crystal reveals a layered structure with alternating polar and apolar sublayers. The mesophases also exhibit a lamellar arrangement detected by variable temperature powder X-ray diffraction. The CuCl_(4)^(2-) salts exhibit the best LC properties followed by the ReO_(4)^(-) ones due to low melting temperature and wide range of existence. The conductivity was probed for the mesophases in one species each from the ReO_(4)^(-) , and CuCl_(4)^(2-) families, and for the solid phase in one of the non-mesomorphic Cl^(-) salts. The highest ionic conductivity was found for the smectic mesophase of the ReO_(4)^(-) containing salt, whereas the solid phases of all salts were dominated by electronic contributions. The ionic conductivity may be favored by the mesophase lamellar structure.

Universal critical behavior of the two-dimensional Ising spin glass

We use finite size scaling to study Ising spin glasses in two spatial dimensions. The issue of universality is addressed by comparing discrete and continuous probability distributions for the quenched random couplings. The sophisticated temperature dependency of the scaling fields is identified as the major obstacle that has impeded a complete analysis. Once temperature is relinquished in favor of the correlation length as the basic variable, we obtain a reliable estimation of the anomalous dimension and of the thermal critical exponent. Universality among binary and Gaussian couplings is confirmed to a high numerical accuracy.

Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric

Thermal stability of AlGaN/GaN MOS-HEMTs and -diodes using Gd_(2)O_(3) are investigated by means of different thermal cycles and storage tests up to 500ºC for one week. IV DC and pulsed characteristics of the devices before and after the processes are evaluated and compared with conventional HEMTs. Results show that the devices with Gd_(2)O_(3) dielectric layer have lower leakage current and a more stable behavior during thermal treatment processes compared with conventional devices. In fact, an excellent on/off ratio of about 108 and a stable V_(t) is observed after storage at high temperature. The beneficial effects of Gd_(2)O_(3) on trapping effects of MOS-HEMTs are also dis-cussed.