Off-equilibrium fluctuation-dissipation relations in the 3d Ising spin glass in a magnetic field

We study the fluctuation-dissipation relations for a three dimensional Ising spin glass in a magnetic field both in the high temperature phase as well as in the low temperature one. In the region of times simulated we have found that our results support a picture of the low temperature phase with broken replica symmetry, but a droplet behavior cannot be completely excluded.

Correspondence between long-range and short-range spin glasses

We compare the critical behavior of the short-range Ising spin glass with a spin glass with long-range interactions which fall off as a power σ of the distance. We show that there is a value of σ of the long-range model for which the critical behavior is very similar to that of the short range model in four dimensions. We also study a value of σ for which we find the critical behavior to be compatible with that of the three-dimensional model, although we have much less precision than in the four-dimensional case.

High On/Off ratio memristive switching of manganite/cuprate bilayer by interfacial magnetoelectricity

Memristive switching serves as the basis for a new generation of electronic devices. Memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies, which is difficult to control. Memristors based on alternative mechanisms have been explored, but achieving both the high On/Off ratio and the low switching energy desirable for use in electronics remains a challenge. Here we report memristive switching in a La_(0.7)Ca_(0.3)MnO_(3)/PrBa_(2)Cu_(3)O_(7) bilayer with an On/Off ratio greater than 103 and demonstrate that the phenomenon originates from a new type of interfacial magnetoelectricity. Using results from firstprinciples calculations, we show that an external electric-field induces subtle displacements of the interfacial Mn ions, which switches on/off an interfacial magnetic “dead” layer, resulting in memristive behavior for spin-polarized electron transport across the bilayer. The interfacial nature of the switching entails low energy cost about of a tenth of atto Joule for write/erase a “bit”. Our results indicate new opportunities for manganite/cuprate systems and other transition-metal-oxide junctions in memristive applications.