Deposition of Intrinsic a-Si:H by ECR-CVD to Passivate the Crystalline Silicon Heterointerface in HIT Solar Cells

We have deposited intrinsic amorphous silicon (a-Si:H) using the electron cyclotron resonance (ECR) chemical vapor deposition technique in order to analyze the a-Si:H/c-Si heterointerface and assess the possible application in heterojunction with intrinsic thin layer (HIT) solar cells. Physical characterization of the deposited films shows that the hydrogen content is in the 15-30% range, depending on deposition temperature. The optical bandgap value is always comprised within the range 1.9- 2.2 eV. Minority carrier lifetime measurements performed on the heterostructures reach high values up to 1.3 ms, indicating a well-passivated a-Si:H/c-Si heterointerface for deposition temperatures as low as 100°C. In addition, we prove that the metal-oxide- semiconductor conductance method to obtain interface trap distribution can be applied to the a-Si:H/c-Si heterointerface, since the intrinsic a-Si:H layer behaves as an insulator at low or negative bias. Values for the minimum of D_it as low as 8 × 10^10 cm^2 · eV^-1 were obtained for our samples, pointing to good surface passivation properties of ECR-deposited a-Si:H for HIT solar cell applications.

Solderjet bumping technique used to manufacture a compact and robust green solid-state laser

Solder-joining using metallic solder alloys is an alternative to adhesive bonding. Laser-based soldering processes are especially well suited for the joining of optical components made of fragile and brittle materials such as glasses, ceramics and optical crystals due to a localized and minimized input of thermal energy. The Solderjet Bumping technique is used to assemble a miniaturized laser resonator in order to obtain higher robustness, wider thermal conductivity performance, higher vacuum and radiation compatibility, and better heat and long term stability compared with identical glued devices. The resulting assembled compact and robust green diode-pumped solid-state laser is part of the future Raman Laser Spectrometer designed for the Exomars European Space Agency (ESA) space mission 2018.