Spectral self-action of THz emission from ionizing two-color laser pulses in gases

The spectrum of terahertz (THz) emission in gases via ionizing two-color femtosecond pulses is analyzed by means of a semi-analytic model and numerical simulations in 1D, 2D and 3D geometries taking into account propagation effects of both pump and THz fields. We show that produced THz signals interact with free electron trajectories and thus significantly influence further THz generation upon propagation, i.e., make the process inherently nonlocal. This self-action contributes to the observed strong spectral broadening of the generated THz field. We show that diffraction of the generated THz radiation is the limiting factor for the co-propagating low frequency amplitudes and thus for the self-action mechanism in 2D and 3D geometries.

Measurement limitations in knife-edge tomographic phase retrieval of focused IR laser beams

An experimental setup to measure the three-dimensional phase-intensity distribution of an infrared laser beam in the focal region has been presented. It is based on the knife-edge method to perform a tomographic reconstruction and on a transport of intensity equation-based numerical method to obtain the propagating wavefront. This experimental approach allows us to characterize a focalized laser beam when the use of image or interferometer arrangements is not possible. Thus, we have recovered intensity and phase of an aberrated beam dominated by astigmatism. The phase evolution is fully consistent with that of the beam intensity along the optical axis. Moreover, this method is based on an expansion on both the irradiance and the phase information in a series of Zernike polynomials. We have described guidelines to choose a proper set of these polynomials depending on the experimental conditions and showed that, by abiding these criteria, numerical errors can be reduced.

Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signatures

We report the observation of the insulator-to-metal transition in crystalline silicon samples supersaturated with vanadium. Ion implantation followed by pulsed laser melting and rapid resolidification produce high quality single-crystalline silicon samples with vanadium concentrations that exceed equilibrium values in more than 5 orders of magnitude. Temperature-dependent analysis of the conductivity and Hall mobility values for temperatures from 10K to 300K indicate that a transition from an insulating to a metallic phase is obtained at a vanadium concentration between 1.1 × 10^(20) and 1.3 × 10^(21) cm^(−3) . Samples in the insulating phase present a variable-range hopping transport mechanism with a Coulomb gap at the Fermi energy level. Electron wave function localization length increases from 61 to 82 nm as the vanadium concentration increases in the films, supporting the theory of impurity band merging from delocalization of levels states. On the metallic phase, electronic transport present a dispersion mechanism related with the Kondo effect, suggesting the presence of local magnetic moments in the vanadium supersaturated silicon material.