Improved and customized secondary optics for photo-voltaic concentrators

In this contribution the line flow method is applied to an optimized secondary optics in a photovoltaic concentration system where the primary optics is already defined and characterized. This method is a particular application of photic field theory. This method uses the parameterization of a given primary optics, including actual tolerances of the manufacturing process. The design of the secondary optics is constrained by the selection of primary optics and maximizes the concentration at a previously specified collection area. The geometry of the secondary element is calculated by using a virtual source, which sends light in a first concentration step. This allows us to calculate the line flow for this specific case. This concept allows designing more compact and efficient secondary optics of photovoltaic systems.

Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap

Silicon samples were implanted with high Ti doses and subsequently processed with the pulsed-laser melting technique. The electronic transport properties in the 15–300 K range and the room temperature spectral photoresponse at energies over the bandgap were measured. Samples with Ti concentration below the insulator-metal (I-M) transition limit showed a progressive reduction of the carrier lifetime in the implanted layer as Ti dose is increased. However, when the Ti concentration exceeded this limit, an extraordinary recovery of the photoresponse was measured. This result supports the theory of intermediate band materials and is of utmost relevance for photovoltaic cells and Si-based detectors.