Analysis of the spectral response of fractal antennas related with its geometry and current paths

Fractal antennas have been proposed to improve the bandwidth of resonant structures and optical antennas. Their multiband characteristics are of interest in radiofrequency and microwave technologies. In this contribution we link the geometry of the current paths built-in the fractal antenna with the spectral response. We have seen that the actual currents owing through the structure are not limited to the portion of the fractal that should be geometrically linked with the signal. This fact strongly depends on the design of the fractal and how the different scales are arranged within the antenna. Some ideas involving materials that could actively respond to the incoming radiation could be of help to spectrally select the response of the multiband design.

The optical design of a far infrared imaging FTS for SPICA

This paper describes the optical design of the far infrared imaging spectrometer for the JAXA's SPICA mission. The SAFARI instrument, is a cryogenic imaging Fourier transform spectrometer (iFTS), designed to perform backgroundlimited spectroscopic and photometric imaging in the band 34-210 μm. The all-reflective optical system is highly modular and consists of three main modules; input optics module, interferometer module (FTS) and camera bay optics. A special study has been dedicated to the spectroscopic performance of the instrument, in which the spectral response and interference of the instrument have been modeled, as the FTS mechanism scans over the total desired OPD range.

Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap

Silicon samples were implanted with high Ti doses and subsequently processed with the pulsed-laser melting technique. The electronic transport properties in the 15–300 K range and the room temperature spectral photoresponse at energies over the bandgap were measured. Samples with Ti concentration below the insulator-metal (I-M) transition limit showed a progressive reduction of the carrier lifetime in the implanted layer as Ti dose is increased. However, when the Ti concentration exceeded this limit, an extraordinary recovery of the photoresponse was measured. This result supports the theory of intermediate band materials and is of utmost relevance for photovoltaic cells and Si-based detectors.