MEGARA: the future IFU and MOS of the 10.4 M GTC

In these proceedings we summarize the characteristics and current status of MEGARA, the future optical IFU and MOS for the 10.4 m GTC. MEGARA is being built by a Consortium led by the UCM (Spain) that also includes the INAOE (Mexico), the IAA-CSIC (Spain) and the UPM (Spain). The MEGARA IFU offers two different bundles, one called LCB with a field-of-view of 14 x 12 arcsec^2 and a spaxel size of 0.685 arcsec yielding spectral resolutions between R=6000-19000 and another one called SCB covering 10 x 8 arcsec^2 with 0.48 arcsec spaxels and resolutions R=8000-25000. The MOS component allows observing up to 100 targets in 3.5x3.5 arcmin^2. In September 2010 MEGARA was selected as the next optical spectrograph for GTC. Its PDR is scheduled for March 2012 with First Light on 2015.

Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric

Thermal stability of AlGaN/GaN MOS-HEMTs and -diodes using Gd_(2)O_(3) are investigated by means of different thermal cycles and storage tests up to 500ºC for one week. IV DC and pulsed characteristics of the devices before and after the processes are evaluated and compared with conventional HEMTs. Results show that the devices with Gd_(2)O_(3) dielectric layer have lower leakage current and a more stable behavior during thermal treatment processes compared with conventional devices. In fact, an excellent on/off ratio of about 108 and a stable V_(t) is observed after storage at high temperature. The beneficial effects of Gd_(2)O_(3) on trapping effects of MOS-HEMTs are also dis-cussed.