Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signatures

We report the observation of the insulator-to-metal transition in crystalline silicon samples supersaturated with vanadium. Ion implantation followed by pulsed laser melting and rapid resolidification produce high quality single-crystalline silicon samples with vanadium concentrations that exceed equilibrium values in more than 5 orders of magnitude. Temperature-dependent analysis of the conductivity and Hall mobility values for temperatures from 10K to 300K indicate that a transition from an insulating to a metallic phase is obtained at a vanadium concentration between 1.1 × 10^(20) and 1.3 × 10^(21) cm^(−3) . Samples in the insulating phase present a variable-range hopping transport mechanism with a Coulomb gap at the Fermi energy level. Electron wave function localization length increases from 61 to 82 nm as the vanadium concentration increases in the films, supporting the theory of impurity band merging from delocalization of levels states. On the metallic phase, electronic transport present a dispersion mechanism related with the Kondo effect, suggesting the presence of local magnetic moments in the vanadium supersaturated silicon material.

Effects of the environment on the electric conductivity of double-stranded DNA molecules

We present a theoretical analysis of the effects of the environment on charge transport in double-stranded synthetic poly(G)-poly(C) DNA molecules attached to two ideal leads. Coupling of the DNA to the environment results in two effects: (i) localization of carrier functions due to static disorder and (ii) phonon-induced scattering of the carriers between the localized states, resulting in hopping conductivity. A nonlinear Pauli master equation for populations of localized states is used to describe the hopping transport and calculate the electric current as a function of the applied bias. We demonstrate that, although the electronic gap in the density of states shrinks as the disorder increases, the voltage gap in the I-V characteristics becomes wider. A simple physical explanation of this effect is provided.

Topological massive Dirac edge modes and long-range superconducting Hamiltonians

We discover novel topological effects in the one-dimensional Kitaev chain modified by long-range Hamiltonian deformations in the hopping and pairing terms. This class of models display symmetry-protected topological order measured by the Berry/Zak phase of the lower-band eigenvector and the winding number of the Hamiltonians. For exponentially decaying hopping amplitudes, the topological sector can be significantly augmented as the penetration length increases, something experimentally achievable. For power-law decaying superconducting pairings, the massless Majorana modes at the edges get paired together into a massive nonlocal Dirac fermion localized at both edges of the chain: a new topological quasiparticle that we call topological massive Dirac fermion. This topological phase has fractional topological numbers as a consequence of the long-range couplings. Possible applications to current experimental setups and topological quantum computation are also discussed.