Library of high-resolution UES echelle spectra of F, G, K and M field dwarf stars

We present a library of Utrecht echelle spectrograph (UES) observations of a sample of F, G, K and M field dwarf stars covering the spectral range from 4800 Å to 10600 Å with a resolution of 55000. These spectra include some of the spectral lines most widely used as optical and near-infrared indicators of chromospheric activity such as Hβ, Mg I b triplet, Na I D_1, D_2, He I D_3, Hα, and Ca II IRT lines, as well as a large number of photospheric lines which can also be affected by chromospheric activity. The spectra have been compiled with the aim of providing a set of standards observed at high-resolution to be used in the application of the spectral subtraction technique to obtain the active-chromosphere contribution to these lines in chromospherically active single and binary stars. This library can also be used for spectral classification purposes. A digital version with all the spectra is available via ftp and the World Wide Web (WWW) in both ASCII and FITS formats.

High On/Off ratio memristive switching of manganite/cuprate bilayer by interfacial magnetoelectricity

Memristive switching serves as the basis for a new generation of electronic devices. Memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies, which is difficult to control. Memristors based on alternative mechanisms have been explored, but achieving both the high On/Off ratio and the low switching energy desirable for use in electronics remains a challenge. Here we report memristive switching in a La_(0.7)Ca_(0.3)MnO_(3)/PrBa_(2)Cu_(3)O_(7) bilayer with an On/Off ratio greater than 103 and demonstrate that the phenomenon originates from a new type of interfacial magnetoelectricity. Using results from firstprinciples calculations, we show that an external electric-field induces subtle displacements of the interfacial Mn ions, which switches on/off an interfacial magnetic “dead” layer, resulting in memristive behavior for spin-polarized electron transport across the bilayer. The interfacial nature of the switching entails low energy cost about of a tenth of atto Joule for write/erase a “bit”. Our results indicate new opportunities for manganite/cuprate systems and other transition-metal-oxide junctions in memristive applications.