Swelling properties of alkali-metal doped polymeric anion-exchange membranes in alcohol media for application in fuel cells

Swelling properties of four commercial anion-exchange membranes with different structure have been analyzed in several hydro-organic media. With this target, the liquid uptake and the surface expansion of the membranes in contact with different pure liquids, water and alcohols (methanol, ethanol and 1-propanol), and with water alcohol mixtures with different concentrations have been experimentally determined in presence and in absence of an alkaline medium (LiOH, NaOH and KOH of different concentrations). The alkali-metal doping effect on the membrane water uptake has also been investigated, analyzing the influence of the hydroxide concentration and the presence of an alcohol in the doping solution. The results show that the membrane structure plays an essential role in the influence that alcohol nature and alkaline media has on the selective properties of the membrane. The heterogeneous membranes, with lower density, show higher liquid uptakes and dimensional changes than the homogeneous membranes, regardless of the doping conditions. (C) 2016 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.

Deposition of Intrinsic a-Si:H by ECR-CVD to Passivate the Crystalline Silicon Heterointerface in HIT Solar Cells

We have deposited intrinsic amorphous silicon (a-Si:H) using the electron cyclotron resonance (ECR) chemical vapor deposition technique in order to analyze the a-Si:H/c-Si heterointerface and assess the possible application in heterojunction with intrinsic thin layer (HIT) solar cells. Physical characterization of the deposited films shows that the hydrogen content is in the 15-30% range, depending on deposition temperature. The optical bandgap value is always comprised within the range 1.9- 2.2 eV. Minority carrier lifetime measurements performed on the heterostructures reach high values up to 1.3 ms, indicating a well-passivated a-Si:H/c-Si heterointerface for deposition temperatures as low as 100°C. In addition, we prove that the metal-oxide- semiconductor conductance method to obtain interface trap distribution can be applied to the a-Si:H/c-Si heterointerface, since the intrinsic a-Si:H layer behaves as an insulator at low or negative bias. Values for the minimum of D_it as low as 8 × 10^10 cm^2 · eV^-1 were obtained for our samples, pointing to good surface passivation properties of ECR-deposited a-Si:H for HIT solar cell applications.