2 resultados para HIGH-PURITY GE DETECTORS

em Universidade Complutense de Madrid


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Amorphous silicon thin films were deposited using the high pressure sputtering (HPS) technique to study the influence of deposition parameters on film composition, presence of impurities, atomic bonding characteristics and optical properties. An optical emission spectroscopy (OES) system has been used to identify the different species present in the plasma in order to obtain appropriate conditions to deposit high purity films. Composition measurements in agreement with the OES information showed impurities which critically depend on the deposition rate and on the gas pressure. We prove that films deposited at the highest RF power and 3.4 × 10^−2 mbar, exhibit properties as good as the ones of the films deposited by other more standard techniques.

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A few years ago, some of the authors of the paper demonstrated the resonance of optical antennas in the visible frequencies. The results of that paper were obtained using experimental techniques that were primarily developed for the measurement of antenna-coupled detectors in the infrared. In the present paper, we show the results of spatial-response mapping obtained by using a dedicated measurement station for the characterization of optical antennas in the visible. At the same time, the bottleneck in the spatial responsivity calculation represented by the beam characterization has been approached from a different perspective. The proposed technique uses a collection of knife edge measurements in order to avoid the use of any model of the laser beam irradiance. By taking all this into account we present the spatial responsivity of optical antennas measured with high spatial resolution in the visible.