Statistical Anomalies of Bitflips in SRAMs to Discriminate SBUs from MCUs

Recently, the occurrence of multiple events in static tests has been investigated by checking the statistical distribution of the difference between the addresses of the words containing bitflips. That method has been successfully applied to Field Programmable Gate Arrays (FPGAs) and the original authors indicate that it is also valid for SRAMs. This paper presents a modified methodology that is based on checking the XORed addresses with bitflips, rather than on the difference. Irradiation tests on CMOS 130 & 90 nm SRAMs with 14-MeV neutrons have been performed to validate this methodology. Results in high-altitude environments are also presented and cross-checked with theoretical predictions. In addition, this methodology has also been used to detect modifications in the organization of said memories. Theoretical predictions have been validated with actual data provided by the manufacturer.

Critical properties of the four-state commutative random permutation glassy Potts model in three and four dimensions

We investigate the critical properties of the four-state commutative random permutation glassy Potts model in three and four dimensions by means of Monte Carlo simulations and a finite-size scaling analysis. By using a field programmable gate array, we have been able to thermalize a large number of samples of systems with large volume. This has allowed us to observe a spin-glass ordered phase in d=4 and to study the critical properties of the transition. In d=3, our results are consistent with the presence of a Kosterlitz-Thouless transition, but also with different scenarios: transient effects due to a value of the lower critical dimension slightly below 3 could be very important.