Subband energy in two-band δ-doped semiconductors

We study electron dynamics in a two-band δ-doped semiconductor within the envelope-function approximation. Using a simple parametrization of the confining potential arising from the ionized donors in the δ -doping layer, we are able to find exact solutions of the Dirac-type equation describing the coupling of host bands. As an application we then consider Si δ -doped GaAs. In particular we find that the ground subband energy scales as a power law of the Si concentration per unit area in a wide range of doping levels. In addition, the coupling of host bands leads to a depression of the subband energy due to nonparabolicity effects.

Spectral damage model for lighted museum paintings: Oil, acrylic and gouache

A spectral aging test was developed to estimate the photochemical damage of oil, acrylic and gouache paints exposed to permanent lighting. The paints were irradiated at seven different wavelengths in the optical range to control and evaluate their spectral behaviour. To reach this objective, boxes with isolated aging cells were made. In each of box, one LED of a different wavelength and one photodiode were installed. Inside the boxes, the temperature of an exhibit area was recreated through a thermocouple sensor that controlled the temperature using a fan. The heat produced by the LED was dissipated by a thermal radiator. Moreover, to evaluate the exposure time dependence of the irradiation level, the test was performed using two different irradiation levels in ten exposure series. After each series, the spectral reflectance was measured, and the data collected for each paint and wavelength were used to develop a model of damage produced by the interaction between the spectral radiant exposure and the paint.