Subband energy in two-band δ-doped semiconductors

We study electron dynamics in a two-band δ-doped semiconductor within the envelope-function approximation. Using a simple parametrization of the confining potential arising from the ionized donors in the δ -doping layer, we are able to find exact solutions of the Dirac-type equation describing the coupling of host bands. As an application we then consider Si δ -doped GaAs. In particular we find that the ground subband energy scales as a power law of the Si concentration per unit area in a wide range of doping levels. In addition, the coupling of host bands leads to a depression of the subband energy due to nonparabolicity effects.

Erratum: Suppression of localization in kronig-penney models with correlated disorder (Vol. 49, PG 147, 1994)

We consider the electron dynamics and transport properties of one-dimensional continuous models with random, short-range correlated impurities. We develop a generalized Poincare map formalism to cast the Schrodinger equation for any potential into a discrete set of equations, illustrating its application by means of a specific example. We then concentrate on the case of a Kronig-Penney model with dimer impurities. The previous technique allows us to show that this model presents infinitely many resonances (zeroes of the reflection coefficient at a single dimer) that give rise to a band of extended states, in contradiction with the general viewpoint that all one-dimensional models with random potentials support only localized states. We report on exact transfer-matrix numerical calculations of the transmission coefFicient, density of states, and localization length for various strengths of disorder. The most important conclusion so obtained is that this kind of system has a very large number of extended states. Multifractal analysis of very long systems clearly demonstrates the extended character of such states in the thermodynamic limit. In closing, we brieBy discuss the relevance of these results in several physical contexts.

Detection of concealed information using event-related potentials

Existe un interés considerable en hallar métodos que nos ayuden a saber cuándo una persona miente y cuándo dice la verdad desde un punto de vista forense. Actualmente, una de las líneas de investigación se inclina hacia el uso de potenciales relacionados con eventos. Se pretende hacer una revisión de los artículos que estudian estos procedimientos mediante distintos métodos: propiedades, fiabilidad, validez y limitaciones. Los resultados indican tasas de acierto en la discriminación de culpables en un rango de 7 al 100 por ciento, y en la de inocentes de 31 a 100 por ciento. La gran variabilidad y la posibilidad de “falsear” las respuestas llevan a cuestionar la inexactitud utilizada en algunos círculos mediáticos respecto a las cualidades y finalidades de dicha prueba. Se concluye la necesidad de profundizar más la posibilidad de que esta prueba sea utilizada con fines forenses.