Single Events in a COTS Soft-Error Free SRAM at Low Bias Voltage Induced by 15-MeV Neutrons

This paper presents an experimental study of the sensitivity to 15-MeV neutrons of Advanced Low Power SRAMs (A-LPSRAM) at low bias voltage little above the threshold value that allows the retention of data. This family of memories is characterized by a 3D structure to minimize the area penalty and to cope with latchups, as well as by the presence of integrated capacitors to hinder the occurrence of single event upsets. In low voltage static tests, classical single event upsets were a minor source of errors, but other unexpected phenomena such as clusters of bitflips and hard errors turned out to be the origin of hundreds of bitflips. Besides, errors were not observed in dynamic tests at nominal voltage. This behavior is clearly different than that of standard bulk CMOS SRAMs, where thousands of errors have been reported.

Far field of binary phase gratings with errors in the height of the strips

Diffraction gratings are not always ideal but, due to the fabrication process, several errors can be produced. In this work we show that when the strips of a binary phase diffraction grating present certain randomness in their height, the intensity of the diffraction orders varies with respect to that obtained with a perfect grating. To show this, we perform an analysis of the mutual coherence function and then, the intensity distribution at the far field is obtained. In addition to the far field diffraction orders, a "halo" that surrounds the diffraction order is found, which is due to the randomness of the strips height.

Error tolerance of topological codes with independent bit-flip and measurement errors

Topological quantum error correction codes are currently among the most promising candidates for efficiently dealing with the decoherence effects inherently present in quantum devices. Numerically, their theoretical error threshold can be calculated by mapping the underlying quantum problem to a related classical statistical-mechanical spin system with quenched disorder. Here, we present results for the general fault-tolerant regime, where we consider both qubit and measurement errors. However, unlike in previous studies, here we vary the strength of the different error sources independently. Our results highlight peculiar differences between toric and color codes. This study complements previous results published in New J. Phys. 13, 083006 (2011).