Insights into the emission of the blazar 1ES 1011+496 through unprecedented broadband observations during 2011 and 2012

Context. 1ES 1011+496 (z = 0.212) was discovered in very high-energy (VHE, E >100 GeV) γ rays with MAGIC in 2007. The absence of simultaneous data at lower energies led to an incomplete characterization of the broadband spectral energy distribution (SED). Aims. We study the source properties and the emission mechanisms, probing whether a simple one-zone synchrotron self-Compton (SSC) scenario is able to explain the observed broadband spectrum. Methods. We analyzed data in the range from VHE to radio data from 2011 and 2012 collected by MAGIC, Fermi-LAT, Swift, KVA, OVRO, and Metsähovi in addition to optical polarimetry data and radio maps from the Liverpool Telescope and MOJAVE. Results. The VHE spectrum was fit with a simple power law with a photon index of 3.69 ± 0.22 and a flux above 150 GeV of (1.46±0.16)×10^(−11) ph cm^(−2) s^(−1) . The source 1ES 1011+496 was found to be in a generally quiescent state at all observed wavelengths, showing only moderate variability from radio to X-rays. A low degree of polarization of less than 10% was measured in optical, while some bright features polarized up to 60% were observed in the radio jet. A similar trend in the rotation of the electric vector position angle was found in optical and radio. The radio maps indicated a superluminal motion of 1.8 ± 0.4 c, which is the highest speed statistically significant measured so far in a high-frequency-peaked BL Lac. Conclusions. For the first time, the high-energy bump in the broadband SED of 1ES 1011+496 could be fully characterized from 0.1 GeV to 1 TeV, which permitted a more reliable interpretation within the one-zone SSC scenario. The polarimetry data suggest that at least part of the optical emission has its origin in some of the bright radio features, while the low polarization in optical might be due to the contribution of parts of the radio jet with different orientations of the magnetic field with respect to the optical emission.

Investigating the peculiar emission from the new VHE gamma-ray source H1722+119

The MAGIC (Major Atmospheric Gamma-ray Imaging Cherenkov) telescopes observed the BL Lac object H1722+119 (redshift unknown) for six consecutive nights between 2013 May 17 and 22, for a total of 12.5 h. The observations were triggered by high activity in the optical band measured by the KVA (Kungliga Vetenskapsakademien) telescope. The source was for the first time detected in the very high energy (VHE, E > 100 GeV) γ-ray band with a statistical significance of 5.9 σ. The integral flux above 150 GeV is estimated to be (2.0 ± 0.5) per cent of the Crab Nebula flux. We used contemporaneous high energy (HE, 100MeV < E < 100 GeV) γ-ray observations from Fermi-LAT (Large Area Telescope) to estimate the redshift of the source. Within the framework of the current extragalactic background light models, we estimate the redshift to be z = 0.34±0.15. Additionally, we used contemporaneous X-ray to radio data collected by the instruments on board the Swift satellite, the KVA, and the OVRO (Owens Valley Radio Observatory) telescope to study multifrequency characteristics of the source. We found no significant temporal variability of the flux in the HE and VHE bands. The flux in the optical and radio wavebands, on the other hand, did vary with different patterns. The spectral energy distribution (SED) of H1722+119 shows surprising behaviour in the ∼ 3×1014 −1018 Hz frequency range. It can be modelled using an inhomogeneous helical jet synchrotron self-Compton model.

Deposition of Intrinsic a-Si:H by ECR-CVD to Passivate the Crystalline Silicon Heterointerface in HIT Solar Cells

We have deposited intrinsic amorphous silicon (a-Si:H) using the electron cyclotron resonance (ECR) chemical vapor deposition technique in order to analyze the a-Si:H/c-Si heterointerface and assess the possible application in heterojunction with intrinsic thin layer (HIT) solar cells. Physical characterization of the deposited films shows that the hydrogen content is in the 15-30% range, depending on deposition temperature. The optical bandgap value is always comprised within the range 1.9- 2.2 eV. Minority carrier lifetime measurements performed on the heterostructures reach high values up to 1.3 ms, indicating a well-passivated a-Si:H/c-Si heterointerface for deposition temperatures as low as 100°C. In addition, we prove that the metal-oxide- semiconductor conductance method to obtain interface trap distribution can be applied to the a-Si:H/c-Si heterointerface, since the intrinsic a-Si:H layer behaves as an insulator at low or negative bias. Values for the minimum of D_it as low as 8 × 10^10 cm^2 · eV^-1 were obtained for our samples, pointing to good surface passivation properties of ECR-deposited a-Si:H for HIT solar cell applications.

Limitations of high pressure sputtering for amorphous silicon deposition

Amorphous silicon thin films were deposited using the high pressure sputtering (HPS) technique to study the influence of deposition parameters on film composition, presence of impurities, atomic bonding characteristics and optical properties. An optical emission spectroscopy (OES) system has been used to identify the different species present in the plasma in order to obtain appropriate conditions to deposit high purity films. Composition measurements in agreement with the OES information showed impurities which critically depend on the deposition rate and on the gas pressure. We prove that films deposited at the highest RF power and 3.4 × 10^−2 mbar, exhibit properties as good as the ones of the films deposited by other more standard techniques.

Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap

Silicon samples were implanted with high Ti doses and subsequently processed with the pulsed-laser melting technique. The electronic transport properties in the 15–300 K range and the room temperature spectral photoresponse at energies over the bandgap were measured. Samples with Ti concentration below the insulator-metal (I-M) transition limit showed a progressive reduction of the carrier lifetime in the implanted layer as Ti dose is increased. However, when the Ti concentration exceeded this limit, an extraordinary recovery of the photoresponse was measured. This result supports the theory of intermediate band materials and is of utmost relevance for photovoltaic cells and Si-based detectors.

High On/Off ratio memristive switching of manganite/cuprate bilayer by interfacial magnetoelectricity

Memristive switching serves as the basis for a new generation of electronic devices. Memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies, which is difficult to control. Memristors based on alternative mechanisms have been explored, but achieving both the high On/Off ratio and the low switching energy desirable for use in electronics remains a challenge. Here we report memristive switching in a La_(0.7)Ca_(0.3)MnO_(3)/PrBa_(2)Cu_(3)O_(7) bilayer with an On/Off ratio greater than 103 and demonstrate that the phenomenon originates from a new type of interfacial magnetoelectricity. Using results from firstprinciples calculations, we show that an external electric-field induces subtle displacements of the interfacial Mn ions, which switches on/off an interfacial magnetic “dead” layer, resulting in memristive behavior for spin-polarized electron transport across the bilayer. The interfacial nature of the switching entails low energy cost about of a tenth of atto Joule for write/erase a “bit”. Our results indicate new opportunities for manganite/cuprate systems and other transition-metal-oxide junctions in memristive applications.

Search for VHE gamma-ray emission from Geminga pulsar and nebula with the MAGIC telescopes

The Geminga pulsar, one of the brighest gamma-ray sources, is a promising candidate for emission of very-high-energy (VHE > 100 GeV) pulsed gamma rays. Also, detection of a large nebula have been claimed by water Cherenkov instruments. We performed deep observations of Geminga with the MAGIC telescopes, yielding 63 hours of good-quality data, and searched for emission from the pulsar and pulsar wind nebula. We did not find any significant detection, and derived 95% confidence level upper limits. The resulting upper limits of 5.3 × 10^(−13) TeV cm^(−2)s^(−1) for the Geminga pulsar and 3.5 × 10^(−12) TeV cm^(−2)s^(−1) for the surrounding nebula at 50 GeV are the most constraining ones obtained so far at VHE. To complement the VHE observations, we also analyzed 5 years of Fermi-LAT data from Geminga, finding that the sub-exponential cut-off is preferred over the exponential cut-off that has been typically used in the literature. We also find that, above 10 GeV, the gamma-ray spectra from Geminga can be described with a power law with index softer than 5. The extrapolation of the power-law Fermi-LAT pulsed spectra to VHE goes well below the MAGIC upper limits, indicating that the detection of pulsed emission from Geminga with the current generation of Cherenkov telescopes is very difficult.

Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signatures

We report the observation of the insulator-to-metal transition in crystalline silicon samples supersaturated with vanadium. Ion implantation followed by pulsed laser melting and rapid resolidification produce high quality single-crystalline silicon samples with vanadium concentrations that exceed equilibrium values in more than 5 orders of magnitude. Temperature-dependent analysis of the conductivity and Hall mobility values for temperatures from 10K to 300K indicate that a transition from an insulating to a metallic phase is obtained at a vanadium concentration between 1.1 × 10^(20) and 1.3 × 10^(21) cm^(−3) . Samples in the insulating phase present a variable-range hopping transport mechanism with a Coulomb gap at the Fermi energy level. Electron wave function localization length increases from 61 to 82 nm as the vanadium concentration increases in the films, supporting the theory of impurity band merging from delocalization of levels states. On the metallic phase, electronic transport present a dispersion mechanism related with the Kondo effect, suggesting the presence of local magnetic moments in the vanadium supersaturated silicon material.

Towards near-threshold server processors

The popularity of cloud computing has led to a dramatic increase in the number of data centers in the world. The ever-increasing computational demands along with the slowdown in technology scaling has ushered an era of power-limited servers. Techniques such as near-threshold computing (NTC) can be used to improve energy efficiency in the post-Dennard scaling era. This paper describes an architecture based on the FD-SOI process technology for near-threshold operation in servers. Our work explores the trade-offs in energy and performance when running a wide range of applications found in private and public clouds, ranging from traditional scale-out applications, such as web search or media streaming, to virtualized banking applications. Our study demonstrates the benefits of near-threshold operation and proposes several directions to synergistically increase the energy proportionality of a near-threshold server.

El bono social y las cooperativas energéticas verdes: situación y perspectivas

Las tarifas sociales son, junto con la transferencia de rentas y las medidas de eficiencia energética, uno de los instrumentos para paliar la pobreza energética. A la tarifa social española, creada en el año 2009 se le denomina “bono social”. Para acceder al bono social, aparte de cumplir los requisitos socioeconómicos estipulados por ley, hay que tener contratada la electricidad con alguna comercializadora de referencia, las cuales tienen la obligación de ofrecer el bono social. Las cooperativas energéticas verdes, un fenómeno reciente, al no ser comercializadoras de referencia, no están obligadas a ofrecer el bono social. Esto no quiere decir que entre los socios de estas cooperativas no haya personas vulnerables o en riesgo de pobreza energética. Este trabajo centra su análisis en dos objetivos. El primero es trazar el perfil socioeconómico del socio de las cooperativas verdes. El segundo es observar si estos socios tienen derecho al bono social actual, así como a otras tarifas sociales alternativas con requisitos diferentes a los del bono social. Para ello, se realiza una encuesta a los socios de la mayor cooperativa energética verde de España. Los resultados evidencian que sí existe riesgo de pobreza energética entre los socios de las cooperativas energéticas verdes, si bien su incidencia depende de cómo se defina al consumidor vulnerable.