Existence of the transverse relaxation time in optically excited bulk semiconductors

Two basic types of depolarization mechanisms, carrier-carrier (CC) and carrier-phonon (CP) scattering, are investigated in optically excited bulk semiconductors (3D), in which the existence of the transverse relaxation time is proven based on the vector property of the interband transition matrix elements. The dephasing rates for both CC and CP scattering are determined to be equal to one half of the total scattering-rate-integrals weighted by the factors (1 - cos chi), where chi are the scattering angles. Analytical expressions of the polarization dephasing due to CC scattering are established by using an uncertainty broadening approach, and analytical ones due to both the polar optical-phonon and non-polar deformation potential scattering (including inter-valley scattering) are also presented by using the sharp spectral functions in the dephasing rate calculations. These formulas, which reveal the trivial role of the Coulomb screening effect in the depolarization processes, are used to explain the experimental results at hand and provide a clear physical picture that is difficult to extract from numerical treatments.

The origin of the transverse relaxation time in optically excited semiconductor quantum wells

The origin of the transverse relaxation time in optically excited semiconductor quantum wells is investigated based on the vector property of the interband transition matrix elements. The dephasing rate due to carrier-carrier (CC) scattering is found to be equal to half of the common momentum relaxation rate. The analytical expression of the polarization dephasing due to CC scattering in two-dimension is established and the dependence of the dephasing rate Gamma(cc) on the carrier density N is determined to be Gamma(cc) = constant (.) N-1/2, which is used to explain the experimental results and provides a promising physical picture. (C) 2004 Elsevier B.V. All rights reserved.

Subband separation energy dependence of intersubband relaxation time in wide quantum wells

Subband separation energy dependence of intersubband relaxation time in a wide quantum well (250 Angstrom) was studied by steady-state and time-resolved photoluminescence. By applying a perpendicular electrical field, the subband separation energy in the quantum well is continuously tuned from 21 to 40 meV. As a result, it is found that the intersubband relaxation time undergoes a drastic change from several hundred picoseconds to subpicoseconds. It is also found that the intersubband relaxation has already become very fast before the energy separation really reaches one optical phonon energy. (C) 1997 American Institute of Physics.

Relaxation time and conductivity of comb-like gel polymer electrolytes

Using the copolymer of acrylonitrile (AN), methyl methacrylate (MMA), and poly(ethylene glycol) methyl ether methacrylate as a backbone and poly(ethylene glycol) methyl ether (PEGME) with 1100 molecular weight as side chains, comb-like gel polymers and their Li salt complexes were synthesized. The dynamic mechanical properties and conductivities were investigated. Results showed that the gel copolymer electrolytes possess two glass transitions: alpha-transition and beta-transition. Based on the time-temperature equivalence principle, a master curve was constructed by selecting T. as reference temperature. By reference to T-0 = 50 degrees C, the relation between log c, and c was found to be linear. The master curves are displaced progressively to higher frequencies as the content of plasticizer is increased. The relation between log tau(p) and the content of plasticizer is also linear.

Mechanical relaxation time of comblike polymer electrolyte

Using poly(styrene-co-maleic anhydride) as the backbone and poly(ethylene glycol) methyl ether as side chains,three kinds of comblike polymers of different side chain length were synthesized. The Li-salt complexes and their firms were prepared. The dynamic mechanical properties were investigated. It was found that the main chain was rigid and the side chain was flexible in this comblike polymer system. Based on the time-temperature equivalence principle, a master curve was constructed. By selecting T-alpha as reference temperature, Arrhenius plots of shift factor and iso-free-volume plots were attained. The values of WLF parameters C-1 and C-2 increase with increasing salt concentration. By reference to T-0 = 50 degrees C, the relation between the average relaxation time 1g tau(c) and Li-salt concentration C is linear. The master curves are displaced progressively to higher frequencies as the M-w of side chains is increased. The relation between the average relaxation time 1g tau(n) and M-w of side chains is also linear. And the master curves are movable with the change of salts. It shows the effect of different kinds of salt on relaxation time.

“Deborah Numbers”, Coupling Multiple Space and Time Scales and Governing Damage Evolution to Failure

Two different spatial levels are involved concerning damage accumulation to eventual failure. nucleation and growth rates of microdamage nN* and V*. It is found that the trans-scale length ratio c*/L does not directly affect the process. Instead, two independent dimensionless numbers: the trans-scale one * * ( V*)including the * **5 * N c V including mesoscopic parameters only, play the key role in the process of damage accumulation to failure. The above implies that there are three time scales involved in the process: the macroscopic imposed time scale tim = /a and two meso-scopic time scales, nucleation and growth of damage, (* *4) N N t =1 n c and tV=c*/V*. Clearly, the dimensionless number De*=tV/tim refers to the ratio of microdamage growth time scale over the macroscopically imposed time scale. So, analogous to the definition of Deborah number as the ratio of relaxation time over external one in rheology. Let De be the imposed Deborah number while De represents the competition and coupling between the microdamage growth and the macroscopically imposed wave loading. In stress-wave induced tensile failure (spallation) De* < 1, this means that microdamage has enough time to grow during the macroscopic wave loading. Thus, the microdamage growth appears to be the predominate mechanism governing the failure. Moreover, the dimensionless number D* = tV/tN characterizes the ratio of two intrinsic mesoscopic time scales: growth over nucleation. Similarly let D be the “intrinsic Deborah number”. Both time scales are relevant to intrinsic relaxation rather than imposed one. Furthermore, the intrinsic Deborah number D* implies a certain characteristic damage. In particular, it is derived that D* is a proper indicator of macroscopic critical damage to damage localization, like D* ∼ (10–3~10–2) in spallation. More importantly, we found that this small intrinsic Deborah number D* indicates the energy partition of microdamage dissipation over bulk plastic work. This explains why spallation can not be formulated by macroscopic energy criterion and must be treated by multi-scale analysis.

Temperature dependence of hole spin relaxation in ultrathin InAs monolayers

The temperature dependence of hole spin relaxation time in both neutral and n-doped ultrathin InAs monolayers has been investigated. It has been suggested that D'yakonov-Perel (DP) mechanism dominates the spin relaxation process at both low and high temperature regimes. The appearance of a peak in temperature dependent spin relaxation time reveals the important contribution of Coulomb scatterings between carriers to the spin kinetics at low temperature, though electron-phonon scattering becomes dominant at higher temperatures. Increased electron screening effect in the n-doped sample has been suggested to account for the shortened spin relaxation time compared with the undoped one. The results suggest that hole spins are also promising for building solid-state qubits.

Localized and free exciton spin relaxation dynamics in GaInNAs/GaAs quantum well

We have investigated the exciton spin relaxation in a GaInNAs/GaAs quantum well. The recombination from free and localized excitons is resolved on the basis of an analysis of the photoluminescence characteristics. The free exciton spin relaxation time is measured to be 192 ps at 10 K, while the localized exciton spin relaxation time is one order of magnitude longer than that of the free exciton. The dependence of the free exciton spin relaxation time on the temperature above 50 K suggests that both the D'yakonov-Perel' and the Elliot-Yafet effects dominate the spin relaxation process. The temperature independence below 50 K is considered to be due to the spin exchange interaction. The ultralong spin relaxation time of the localized excitons is explained to be due to the influence of nonradiative deep centers. (c) 2008 American Institute of Physics.

Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix

Electron-spin dynamics in InAs/GaAs heterostructures consisting of a single layer of InAs (1/3-1 monolayer) embedded in (001) and (311)A GaAs matrix was studied by means of time-resolved Kerr rotation spectroscopy. The spin-relaxation time of the submonolayer InAs samples is significantly enhanced, compared with that of the monolayer InAs sample. The electron-spin-relaxation time and the effective g factor in submonolayer samples were found to be strongly dependent on the photogenerated carrier density. The contribution from both the D'yakonov-Perel' mechanism and Bir-Aronov-Pikus mechanism are discussed to interpret the temperature dependence of spin decoherence at various carrier densities.

Hole Spin Relaxation in an Ultrathin InAs Monolayer

We investigate the spin relaxation time of holes in an ultrathin neutral InAs monolayer (1.5 ML) and compare with that of electrons, using polarization-dependent time-resolved photoluminescence (TRPL) experiments. With excitation energies above the GaAs gap, we observe a rather slow relaxation of holes (tau(1h) = 196 +/- 17 ps) that is in the magnitude similar to electrons (tau(1e) = 354 +/- 32 ps) in this ultrathin sample. The results are in good agreement with earlier theoretical prediction, and the phonon scattering due to spin-orbit coupling is realized to play a dominant role in the carrier spin kinetics.

Dyakonov-Perel spin relaxation in InSb/AlxIn(1-x)Sb quantum wells

We investigate theoretically the Dyakonov-Perel spin relaxation time by solving the eight-band Kane model and Poisson equation self-consistently. Our results show distinct behavior with the single-band model due to the anomalous spin-orbit interactions in narrow band-gap semiconductors, and agree well with the experiment values reported in recent experiment [K. L. Litvinenko et al., New J. Phys. 8, 49 (2006)]. We find a strong resonant enhancement of the spin relaxation time appears for spin align along [1 (1) over bar0] at a certain electron density at 4 K. This resonant peak is smeared out with increasing the temperature.

Magnetophonon resonance in the energy relaxation of electrons in a quantum well

The magnetophonon resonance effect in the energy relaxation rate is studied theoretically for a quasi-two-dimensional electron gas in a semiconductor quantum well. An electron-temperature model is adopted to describe the coupled electron-phonon system. The energy relaxation time, derived from the energy relaxation rate, is found to display an oscillatory behavior as the magnetic-field strength changes, and reaches minima when the optical phonon frequency equals integer multiples of the electron cyclotron frequency. The theoretical results are compared with a recent experiment, and a qualitative agreement is found.

Relaxation behavior of polymer blends with complex morphologies: Palierne emulsion model for uncompatibilized and compatibilized PP/PA6 blends

This paper deals with the dynamic rheological behavior of polypropylene/polyamide6 (PP/PA6) uncompatibilized blends and those compatibilized with a maleic anhydride grafted PP (PP/PP-g-MAH/PA6). The terminal relaxation times of the blends predicted by the Palierne emulsion model were compared with those obtained from experimental relaxation time spectra. The Palierne model succeeded well in describing PP/PA6 uncompatibilized blends with relatively low dispersed phase contents (10 wt%) and failed doing so for those of which the dispersed contents were high (30 wt%). It also failed for the compatibilized ones, irrespective of the dispersed phase content (10 or 30 wt%) and whether or not interface relaxation was taken into consideration. In the case of the uncompatibilized blend with high dispersed-phase content, interconnections among inclusions of the dispersed phase were responsible for the failure of the Palierne model. As for the compatiblized blends, in addition to particle interconnections, the existence of emulsion-in-emulsion (EE) structures was another factor responsible for the failure of Palieme model.

Effects of solution viscosity on heterogeneous electron transfer across a liquid/liquid interface

Scanning electrochemical microscopy (SECM) is employed to investigate the effect of solution viscosity on the rate constants of electron transfer (ET) reaction between potassium ferricyanide in water and 7,7,8,8-tetracyanoquinodimethane (TCNQ) in 1,2-dichloroethane. Either tetrabutylammonium (TBA(+)) or ClO4- is chosen as the common ion in both phases to control the interfacial potential drop. The rate constant of heterogeneous ET reaction between TCNQ and ferrocyanide produced in-situ, k(12), is evaluated by SECM and is inversely proportional to the viscosity of the aqueous solution and directly proportional to the diffusion coefficient of K4Fe(CN)(6) in water when the concentration of TCNQ in the DCE phase is in excess. The k(12) dependence on viscosity is explained in terms of the longitudinal relaxation time of the solution. The rate constant of the heterogeneous ET reaction between TCNQ and ferricyanide, k(21), is also obtained by SECM and these results cannot be explained by the same manner.