2 resultados para warp
em Chinese Academy of Sciences Institutional Repositories Grid Portal
Resumo:
This book elucidates the methods of molecular gas dynamics or rarefied gas dynamics which treat the problems of gas flows when the discrete molecular effects of the gas prevail under the circumstances of low density, the emphases being stressed on the basis of the methods, the direct simulation Monte Carlo method applied to the simulation of non-equilibrium effects and the frontier subjects related to low speed microscale rarefied gas flows. It provides a solid basis for the study of molecular gas dynamics for senior students and graduates in the aerospace and mechanical engineering departments of universities and colleges. It gives a general acquaintance of modern developments of rarefied gas dynamics in various regimes and leads to the frontier topics of non-equilibrium rarefied gas dynamics and low speed microscale gas dynamics. It will be also of benefit to the scientific and technical researchers engaged in aerospace high altitude aerodynamic force and heating design and in the research on gas flow in MEMS
| [1] Molecular structure and energy states | (21) | ||
| [2] Some basic concepts of kinetic theory | (51) | ||
| [3] Interaction of molecules with solid surface | (131) | ||
| [4] Free molecular flow | (159) | ||
| [5] Continuum models | (191) | ||
| [6] Transitional regime | (231) | ||
| [7] Direct simulation Monte-Carlo (DSMC) method | (275) | ||
| [8] Microscale slow gas flows, information preservation method | (317) | ||
| [App. I] Gas properties | (367) | ||
| [App. II] Some integrals | (369) | ||
| [App. III] Sampling from a prescribed distribution | (375) | ||
| [App. IV] Program of the couette flow | (383) | ||
| Subject Index | (399) | ||
Resumo:
Heteroepitaxial growth of 3C-SiC on patterned Si substrates by low pressure chemical vapor deposition (LPCVD) has been investigated to improve the crystal quality of 3C-SiC films. Si substrates were patterned with parallel lines, 1 to 10μm wide and spaced 1 to 10μm apart, which was carried out by photolithography and reactive ion etching. Growth behavior on the patterned substrates was systematically studied by scanning electron microscopy (SEM). An air gap structure and a spherical shape were formed on the patterned Si substrates with different dimensions. The air gap formed after coalescence reduced the stress in the 3C-SiC films, solving the wafer warp and making it possible to grow thicker films. XRD patterns indicated that the films grown on the maskless patterned Si substrates were mainly composed of crystal planes with (111) orientation.
