21 resultados para unity
em Chinese Academy of Sciences Institutional Repositories Grid Portal
Resumo:
The electrochemical behavior of ionizable drugs (Amitriptyline, Diphenhydramine and Trihexyphenedyl) at the water/1,2-dichloroethane interface with the phase volume ratio (r = V-o/V-w) equal to 1 are investigated by cyclic voltammetry. The system is composed of an aqueous droplet supported at an Ag/AgCl disk electrode and it was covered with an organic solution. In this manner, a conventional three-electrode potentiostat can be used to study the ionizable drugs transfer process at a liquid/liquid interface. Physicochemical parameters such as the formal transfer potential, the Gibbs energy of transfer and the standard partition coefficients of the ionized forms of these drugs can be evaluated from cyclic voltammograms obtained. The obtained results have been summarized in ionic partition diagrams, which are a useful tool for predicting and interpreting the transfer mechanisms of ionizable drugs at the liquid/liquid interfaces and biological membranes.
Resumo:
介绍了美国Varian公司制造的NUITY-400超导核磁共振波谱仪氘锁通道故障几例的检查、分析及排除方法。
Resumo:
本文介绍了用国产微机电源代替UNITY-400超导核磁共振波谱仪工作站电源的方法和步骤。
Resumo:
A perturbation method is used to examine the linear instability of thermocapillary convection in a liquid bridge of floating half-zone filled with a small Prandtl number fluid. The influence of liquid bridge volume on critical Marangoni number and flow features is analyzed. The neutral modes show that the instability is mainly caused by the bulk flow that is driven by the nonuniform thermocapillary forces acting on the free surface. The hydrodynamic instability is dominant in the case of small Prandtl number fluid and the first instability mode is a stationary bifurcation. The azimuthal wave number for the most dangerous mode depends on the liquid bridge volume, and is not always two as in the case of a cylindrical liquid bridge with aspect ratio near 0.6. Its value may be equal to unity when the liquid bridge is relatively slender.
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The time correlations of pressure modes in stationary isotropic turbulence are investigated under the Kraichnan and Tennekes "random sweeping" hypothesis. A simple model is obtained which predicts a universal form for the time correlations. It implies that the decorrelation process of pressure fluctuations in time is mainly dominated by the sweeping velocity, and the pressure correlations have the same decorrelation time scales as the velocity correlations. These results are verified using direct numerical simulations of isotropic turbulence at two moderate Reynolds numbers; the mode correlations collapse to the universal form when the time separations are scaled by wavenumber times the sweeping velocity, and the ratios of the correlation coefficients of pressure modes to those of velocity modes are approximately unity for the entire range of time separation. (c) 2008 American Institute of Physics.
Resumo:
Based on the analysis of molecular gas dynamics, the drag and moment acting on an ellipsoid particle of revolution X-2/a(2) + Y-2/a(2) + Z(2)/c(2) = 1, as an example of nonspherical particles, are studied under the condition of free-molecular plasma flow with thin plasma sheaths. A nonzero moment which causes nonspherical particle self-oscillation and self-rotation around its own axis in the plasma flow-similar to the pitching moment in aerodynamics-is discovered for the first time. When the ratio of axis length c/a is unity, the moment is zero and the drag formula are reduced to the well-known results of spherical particles. The effects of the particle-plasma relative velocity, the plasma temperature, and the particle materials on the drag and moment are also investigated.
Resumo:
The compressible laminar boundary-layer flows of a dilute gas-particle mixture over a semi-infinite flat plate are investigated analytically. The governing equations are presented in a general form where more reasonable relations for the two-phase interaction and the gas viscosity are included. The detailed flow structures of the gas and particle phases are given in three distinct regions : the large-slip region near the leading edge, the moderate-slip region and the small-slip region far downstream. The asymptotic solutions for the two limiting regions are obtained by using a seriesexpansion method. The finite-difference solutions along the whole length of the plate are obtained by using implicit four-point and six-point schemes. The results from these two methods are compared and very good agreement is achieved. The characteristic quantities of the boundary layer are calculated and the effects on the flow produced by the particles are discussed. It is found that in the case of laminar boundary-layer flows, the skin friction and wall heat-transfer are higher and the displacement thickness is lower than in the pure-gas case alone. The results indicate that the Stokes-interaction relation is reasonable qualitatively but not correct quantitatively and a relevant non-Stokes relation of the interaction between the two phases should be specified when the particle Reynolds number is higher than unity.
Resumo:
The convective--diffusion equation is of primary importance in such fields as fluid dynamics and heat transfer hi the numerical methods solving the convective-diffusion equation, the finite volume method can use conveniently diversified grids (structured and unstructured grids) and is suitable for very complex geometry The disadvantage of FV methods compared to the finite difference method is that FV-methods of order higher than second are more difficult to develop in three-dimensional cases. The second-order central scheme (2cs) offers a good compromise among accuracy, simplicity and efficiency, however, it will produce oscillatory solutions when the grid Reynolds numbers are large and then very fine grids are required to obtain accurate solution. The simplest first-order upwind (IUW) scheme satisfies the convective boundedness criteria, however. Its numerical diffusion is large. The power-law scheme, QMCK and second-order upwind (2UW) schemes are also often used in some commercial codes. Their numerical accurate are roughly consistent with that of ZCS. Therefore, it is meaningful to offer higher-accurate three point FV scheme. In this paper, the numerical-value perturbational method suggested by Zhi Gao is used to develop an upwind and mixed FV scheme using any higher-order interpolation and second-order integration approximations, which is called perturbational finite volume (PFV) scheme. The PFV scheme uses the least nodes similar to the standard three-point schemes, namely, the number of the nodes needed equals to unity plus the face-number of the control volume. For instanc6, in the two-dimensional (2-D) case, only four nodes for the triangle grids and five nodes for the Cartesian grids are utilized, respectively. The PFV scheme is applied on a number of 1-D problems, 2~Dand 3-D flow model equations. Comparing with other standard three-point schemes, The PFV scheme has much smaller numerical diffusion than the first-order upwind (IUW) scheme, its numerical accuracy are also higher than the second-order central scheme (2CS), the power-law scheme (PLS), the QUICK scheme and the second-order upwind(ZUW) scheme.
Resumo:
Onset and evolution of the Rayleigh-Benard (R-B) convection are investigated using the Information Preservation (IP) method. The information velocity and temperature are updated using the Octant Flux Splitting (OFS) model developed by Masters & Ye based on the Maxwell transport equation suggested by Sun & Boyd. Statistical noise inherent in particle approaches such as the direct simulation Monte Carlo (DSMC) method is effectively reduced by the IP method, and therefore the evolutions from an initial quiescent fluid to a final steady state are shown clearly. An interesting phenomenon is observed: when the Rayleigh number (Ra) exceeds its critical value, there exists an obvious incubation stage. During the incubation stage, the vortex structure clearly appears and evolves, whereas the Nusselt number (Nu) of the lower plate is close to unity. After the incubation stage, the vortex velocity and Nu rapidly increase, and the flow field quickly reaches a steady, convective state. A relation of Nu to Ra given by IP agrees with those given by DSMC, the classical theory and experimental data.
Resumo:
We present a universal analyzer for the three-particle Greenberger-Horne-Zeilinger (GHZ) states with quantum nondemolition parity detectors and linear-optics elements. In our scheme, all of the three-photon GHZ states can be discriminated with nearly unity probability in the regime of weak nonlinearity feasible at the present state of the art experimentally. We also show that our scheme can be easily extended to the analysis of the multi-particle GHZ states.
Resumo:
A deep binary silicon grating as high-extinction-ratio reflective polarizing beam splitter (PBS) at the wavelength of 1550 nm is presented. The design is based on the phenomenon of total internal reflection (TIR) by using the rigorous coupled wave analysis (RCWA). The extinction ratio of the rectangular PBS grating can reach 2.5×105 with the optimum grating period of 397 nm and groove depth of 1.092 μm. The effciencies of TM-polarized wave in the 0th order and TE-polarized wave in the −1st order can both reach unity at the Littrow angle. Holographic recording technology and inductively coupled plasma (ICP) etching could be used to fabricate the silicon PBS grating.
Resumo:
High-quality AlGaN/GaN high electron mobility transistor (HEMT) structures were grown by metalorganic chemical vapor deposition (MOCVD) on 2-in. sapphire substrates. Two-dimensional electron gas (2DEG) mobility of 1410 cm(2)/Vs and concentration of 1.0X10(13) CM-2 are obtained at 295 K from the HEMT structures, whose average sheet resistance and sheet resistance uniformity are measured to be about 395 Omega/sq and 96.65% on 2-in. wafers, respectively. AlGaN/GaN HEMTs with 0.8 mu m gate length and 0.2 mm gate width were fabricated and characterized using the grown HEMT structures. Maximum current density of 0.9 A/ mm, peak extrinsic transconductance of 290 mS/mm, unity cutoff frequency (f(T)) of 20 GHz and maximum oscillation frequency (f(max) of 46 GHz are achieved. These results represent significant improvements over the previously fabricated devices with the same gate length, which are attributed to the improved performances of the MOCVD-grown HEMT structures. (c) 2005 Elsevier Ltd. All rights reserved.
Resumo:
The electronic structure and optical properties of freestanding GaN wurtzite quantum wires are studied in the framework of six-band effective-mass envelope function theory. It is found that the electron states are either twofold or fourfold degenerate. There is a dark exciton effect when the radius R of GaN wurtzite quantum wires is in the range of [0.7, 10.9] nm. The linear polarization factors are calculated in three cases, the quantum confinement effect (finite long wire), the dielectric effect and both effects (infinitely long wire). It is found that the linear polarization factor of a finite long wire whose length is much less than the electromagnetic wavelength decreases as R increases, is very close to unity (0.979) at R = I nm, and changes from a positive value to a negative value around R = 4.1 nm. The linear polarization factor of the dielectric effect is 0.934, independent of radius, as long as the radius remains much less than the electromagnetic wavelength. The result for the two effects shows that the quantum confinement effect gives a correction to the dielectric effect result. It is found that the linear polarization factor of very long (treated approximately as infinitely long) quantum wires is in the range of [0.8, 1]. The linear polarization factors of the quantum confinement effect of CdSe wurtzite quantum wires are calculated for comparison. In the CdSe case, the linear polarization factor of R = I nm is 0.857, in agreement with the experimental results (Hu et al 2001 Science 292 2060). This value is much smaller than unity, unlike 0.979 in the GaN case, mainly due to the big spin-orbit splitting energy Delta(so) of CdSe material with wurtzite structure.
Resumo:
AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrates by MOCVD, and 0.8-mu m gate length devices were fabricated and measured. It is shown by resistance mapping that the HEMT structures have an average sheet resistance of approximately 380 Omega/sq with a uniformity of more than 96%. The 1-mm gate width devices using the materials yielded a pulsed drain current of 784 mA/mm at V-gs=0.5 V and V-ds=7 V with an extrinsic transconductance of 200 mS/mm. A 20-GHz unity current gain cutoff frequency (f(T)) and a 28-GHz maximum oscillation frequency (f(max)) were obtained. The device with a 0.6-mm gate width yielded a total output power of 2.0 W/mm (power density of 3.33 W/mm) with 41% power added efficiency (PAE) at 4 GHz.