Anisotropic-source-induced changes of the degree of polarization of stochastic electromagnetic beams on propagation

It is shown that stochastic electromagnetic beams may have different degrees of polarization on propagation, even though they have the same coherence properties in the source plane. This fact is due to a possible difference in the anisotropy of the field in the source plane. The result is illustrated by some examples.

The degree of predictability of earthquakes in several regions of China: statistical analysis of historical data

The stress release model, a stochastic version of the elastic-rebound theory, is applied to the historical earthquake data from three strong earthquake-prone regions of China, including North China, Southwest China, and the Taiwan seismic regions. The results show that the seismicity along a plate boundary (Taiwan) is more active than in intraplate regions (North and Southwest China). The degree of predictability or regularity of seismic events in these seismic regions, based on both the Akaike information criterion (AIC) and fitted sensitivity parameters, follows the order Taiwan, Southwest China, and North China, which is further identified by numerical simulations. (c) 2004 Elsevier Ltd. All rights reserved.

Amplitude/frequency of spontaneous mEPSC correlates to the degree of long-term depression in the CA1 region of the hippocampal slice

Prior synaptic or cellular activity influences degree or threshold for subsequent induction of synaptic plasticity, a process known as metaplasticity. Thus, the continual synaptic activity, spontaneous miniature excitatory synaptic current (mEPSC) may correlate to the induction of long-teen depression (LTD). Here, we recorded whole-cell EPSC and mEPSC alternately in the Schaffer-CA1 synapses in brain slice of young rats, and found that this recording configuration affected neither EPSC nor mEPSC. Low frequency stimulation (LFS) induced variable magnitudes of LTD. Remarkably, larger magnitudes of LTD were significantly correlated to smaller amplitude/lower frequency of the basal mEPSC. Furthermore, under the conditions reduced amplitude/frequency of the basal mEPSC by exposure to behavioral stress immediately before slice preparation or low concentration of calcium in bath solution, the magnitudes of LTD were still inversely correlated to mEPSC amplitude/frequency. These new findings suggest that spontaneous mEPSC may reflect functional and/or structural aspects of the synapses, the synaptic history ongoing metaplasticity. (C) 2005 Elsevier B.V. All rights reserved.

The electronic structure of strained ZnO/MgxZn1-xO superlattices and the influence of polarization

Based on the effective-mass model, the lower energies of the electron and the hole of ZnO/MgxZn1-xO superlattices are calculated. Because of the mismatch of the lattice constant between the ZnO well and the MgxZn1-xO barrier, piezoelectric and spontaneous polarization exist in ZnO/MgxZn1-xO superlattices and a macroscopical internal electric held is found when well width L-w >4 nm and Mg concentration x > 0.2. The parameters of ZnO/MgxZn1-xO superlattices such as lattice constant, band offset, etc. are also proposed. Through calculations, we found the internal electric field can change the lowest energies of the electron and hole to 105.4 and 85.1 meV when well width L-w up to 70 angstrom, which will influence the electronic and optical properties of ZnO/MgxZn1-xO superlattices greatly, while the Rashba effect from the internal electric field is so small that it can be neglected. The ground state exciton energies with different Mg concentration x are also calculated by variational method, our results are very close to the experimental results when Mg concentration x <= 0.3. (C) 2008 Elsevier B.V. All rights reserved.

A study of the degree of relaxation of AlGaN epilayers on GaN template

The strain state of 570nm AlXGa1-xN layers grown on 600nm GaN template by metal organic chemical vapor deposition was studied using Rutherford backscattering (RBS)/channeling and triple-axis X-ray diffraction measurements. The results showed that the degree of relaxation (R) of AlxGa1-xN layers increased almost linearly when x less than or equal to 0.42 and reached to 70% when x = 0.42. Above 0.42, the value of R varied slowly and AI(x)Ga(1-x)N layers almost full relaxed when x = 1 (AIN). In this work the underlying GaN layer was in compressive strain, which resulted in the reduction of lattice misfit between GaN and AlxGa1-xN, and a 570nm AlxGa1-xN layer with the composition of about 0.16 might be grown on GaN coherently from the extrapolation. The different shape of (0004) diffraction peak was discussed to be related to the relaxation. (C) 2004 Elsevier B.V. All rights reserved.

Influence of the degree of grafting on the morphology and mechanical properties of blends of poly(butylene terephthalate) and glycidyl methacrylate grafted poly(ethylene-co-propylene) (EPR)

Poly(ethylene-co-propylene) (EPR) was functionalized to varying degrees with glycidyl methacrylate (GMA) by melt grafting processes. The EPR-graft-GMA elastomers were used to toughen poly(butylene terephthalate) (PBT). Results showed that the grafting degree strongly influenced the morphology and mechanical properties of PBT/EPR-graft-GMA blends. Compatibilization reactions between the carboxyl and/or hydroxyl of PBT and epoxy groups of EPR-graft-GMA induced smaller dispersed phase sizes and uniform dispersed phase distributions. However, higher degrees of grafting (>1.3) and dispersed phase contents (>10 wt%) led to higher viscosities and severe crosslinking reactions in PBT/EPR-graft-GMA blends, resulting in larger dispersed domains of PBT blends. Consistent with the change in morphology, the impact strength of the PBT blends increased with the increase in EPR-graft-GMA degrees of grafting for the same dispersion phase content when the degree of grafting was below 1.8. However, PBT/EPR-graft-GMA1.8 displayed much lower impact strength in the ductile region than a comparable PBT/EPR-graft-GMA1.3 blend (1.3 indicates degree of grafting).

POLARIZATION OF HOT PHOTOLUMINESCENCE IN QUANTUM-WELLS AND HEAVY-LIGHT HOLE MIXING

Hot electrons excited from the valence band by linearly polarized laser light are characterized by certain angular distributions in momenta. Owing to such angular distributions in momenta, the photoluminescence from the hot electrons shows a certain degree of polarization. A theoretical treatment of this effect observed in the photoluminescence in quantum wells is given, showing that the effect depends strongly on heavy and light hole mixing. The very large disparity between the experimentally observed and theoretically expected values of the degree of polarization in the hot-electron photoluminescence suggests the presence of random quasielastic scattering. The effects of such additional scattering and the presence of a perpendicular magnetic field are incorporated into the theory. it is shown that the measurements of the degree of polarization observed in the hot electron photoluminescence, with and without an applied perpendicular magnetic field can serve to determine the time constants for both LO-phonon inelastic and random quasielastic scattering. As an example, these time constants are determined for the experiments reported in the literature.

Linear polarization of photoluminescence in quantum wires

The linear character of the polarization of the luminescence in porous Si is studied experimentally, and the corresponding luminescence characteristics in quantum wires are studied theoretically using a quantum cylindrical model in the framework of the effective-mass theory. From the experimental and theoretical results it is concluded that there is a stronger linear polarization parallel to the wire direction than there is perpendicular to the wire, and that it is connected with the valence band structure in quantum confinement in two directions. The theoretical photoluminescence spectra of the parallel and perpendicular polarization directions, and the degree of polarization as functions of the radius of the wire and the temperature are obtained for In0.53Ga0.47As quantum wires and porous silicon. From the theory, we demonstrated that the degree of polarization decreases with increasing temperature and radius, and that this effect is more apparent for porous Si. The theoretical results are in good agreement with the experimental results for the InGaAs quantum wires, and in qualitative agreement with those for the porous silicon.

Towards an Understanding of the Influence of Sedimentation on Colloidal Aggregation by Peclet Number

The Peclet number is a useful index to estimate the importance of sedimentation as compared to the Brownian motion. However, how to choose the characteristic length scale for the Peclet number evaluation is rather critical because the diffusion length increases as the square root of the time whereas the drifting length is linearly related to time. Our Brownian dynamics simulation shows that the degree of sedimentation influence on the coagulation decreases when the dispersion volume fraction increases. Therefore using a fixed length, such as the diameter of particle, as the characteristic length scale for Peclet number evaluation is not a good choice when dealing with the influence of sedimentation on coagulation. The simulations demonstrated that environmental factors in the coagulation process, such as dispersion volume fraction and size distribution, should be taken into account for more reasonable evaluation of the sedimentation influence.

The accuracy of Kirchhoff's approximation in describing the far field speckles produced by random self-affine fractal surfaces

Based on the rigorous formulation of integral equations for the propagations of light waves at the medium interface, we carry out the numerical solutions of the random light field scattered from self-affine fractal surface samples. The light intensities produced by the same surface samples are also calculated in Kirchhoff's approximation, and their comparisons with the corresponding rigorous results show directly the degree of the accuracy of the approximation. It is indicated that Kirchhoff's approximation is of good accuracy for random surfaces with small roughness value w and large roughness exponent alpha. For random surfaces with larger w and smaller alpha, the approximation results in considerable errors, and detailed calculations show that the inaccuracy comes from the simplification that the transmitted light field is proportional to the incident field and from the neglect of light field derivative at the interface.