Single mode vertical-cavity surface emitting laser with surface plasmon nanostructure

The vertical-cavity surface-emitting laser(VCSEL) has proved to be a low cost light source with attractive properties such as surface emission, circular and low divergence output beam, and simple integration in two-dimensional array. Many new applications such as in spectroscopy, optical storage, short distance fiber optic interconnects, and in longer distance communication, are continuously arising. Many of these applications require stable and single-mode high output power. Several methods that affect the transverse guiding and/or introduce mode selective loss or gain have been developed. In this study, a method for improving the single mode output power by using metal surface plasmons nanostructure is proposed. Theoretical calculation shows that the outpout power is improved about 50% compared to the result of standard VCSELs.

Design of surface emitting distributed feedback quantum cascade laser with single-lobe far-field pattern and high outcoupling efficiency

A 7.8-mu m surface emitting second-order distributed feedback quantum cascade laser (DFB QCL) structure with metallized surface grating is studied. The modal property of this structure is described by utilizing coupled-mode theory where the coupling coefficients are derived from exact Floquet-Bloch solutions of infinite periodic structure. Based on this theory, the influence of waveguide structure and grating topography as well as device length on the laser performance is numerically investigated. The optimized surface emitting second-order DFB QCL structure design exhibits a high surface outcoupling efficiency of 22% and a low threshold gain of 10 cm(-1). Using a pi phase-shift in the centre of the grating, a high-quality single-lobe far-field radiation pattern is obtained.

Radiation of dressed excitons in the semiconductor microcavity

In this paper, we introduced the dressed exciton model of the semiconductor micro-cavity device. In the semiconductor micro cavity of vertical-cavity surface-emission device, the excitons first coupled with the cavity through an intra-electromagnetic field and formed the dressed excitons. Then these dressed excitons decayed into the vacuum cavity optical mode, as a multiparticle process. Through the quantum electrodynamics method, the dipole emission density and system energy decayed equation were obtained. And it was predicted that the excitons decay into a very narrow mode when the exciton-cavity coupling becomes strong enough.

Effects of the morphology of ZnO/Ag interface on the surface-plasmon-enhanced emission of ZnO films

The effects of the surface morphology of Ag on the surface-plasmon-enhanced emission of ZnO films have been studied for a ZnO/Ag/Si system by photoluminescence spectroscopy and atomic force microscopy. The results indicate that the enhancement of ZnO ultraviolet emission is dependent on the deposition conditions of the Ag interlayers. By examining the dependence of the enhancement ratio of surface-plasmon-mediated emission on the characteristic parameters of Ag surface morphology, we found that the surface plasmon coupling to light is determined by both the Ag particle size and density.

Surface plasmon enhanced ultraviolet emission from ZnO films deposited on Ag/Si(001) by magnetron sputtering

The ZnO films were grown on Ag/Si(001) substrates by sputtering Ag and ZnO targets successively in a pure Ar ambient. A significant enhancement of ZnO ultraviolet emission and a reduction of its full width of half maximum have been observed while introducing a 100 nm Ag interlayer between ZnO film and Si substrate. Furthermore, a complete suppression of the defect related visible emission was also found for the ZnO/Ag/Si sample. This improved optical performance of ZnO is attributed to the resonant coupling between Ag surface plasmon and ultraviolet emission of ZnO. (c) 2007 American Institute of Physics.

Localized-Surface-Plasmon Enhanced the 357 nm Forward Emission from ZnMgO Films Capped by Pt Nanoparticles

The Pt nanoparticles (NPs), which posses the wider tunable localized-surface-plasmon (LSP) energy varying from deep ultraviolet to visible region depending on their morphology, were prepared by annealing Pt thin films with different initial mass-thicknesses. A sixfold enhancement of the 357 nm forward emission of ZnMgO was observed after capping with Pt NPs, which is due to the resonance coupling between the LSP of Pt NPs and the band-gap emission of ZnMgO. The other factors affecting the ultraviolet emission of ZnMgO, such as emission from Pt itself and light multi-scattering at the interface, were also discussed. These results indicate that Pt NPs can be used to enhance the ultraviolet emission through the LSP coupling for various wide band-gap semiconductors.

Kinetic energy and charge state effects in the X-ray emission of Mo surface induced by Xeq+ (q=25, 29) ions

L-shell X-ray spectra of Mo surface induced by Xe25+ and Xe29+ were measured. The X-ray intensity was obtained in the kinetic energy range of the incident ions from 350 to 600 keV. The relationship of X-ray intensity with kinetic energy of the projectile and its charge state were studied, and the simple explanation was given.

The electron emission yield induced by the interaction of highly charged argon ions with silicon surface

The electron emission yield of the interaction of highly charged argon ions with silicon surface is reported. The experiment was done at the Atomic Physics Research Platform on the Electron Cyclotron Resonance (ECR) Ion Source of the National Laboratory HIRFL (Heavy Ion Research Facility in Lanzhou). In the experiment, the potential energy and kinetic energy was selected by varying the projectile charge states and extracting voltage, thus the contributions of the projectile potential energy deposition and electronic energy loss in the solid are extensively investigated. The results show that, the two main factors leading to surface electron emission, namely the potential energy deposition and the electronic energy loss, are both approximately proportional to the electron emission yield per ion.

X-ray emission of hollow atoms formed by highly charged argon and xenon ions below a beryllium surface

The X-ray emission induced by highly charged argon and xenon ions impinging on a beryllium surface is investigated. It is found that spectra of the X-ray induced by Ar-17,Ar-18+ interacting with the surface are very different from those of the X-ray induced by Ar-17,Ar-18+ interacting with residual gases. The result provides an experimental evidence for the existence of hollow atoms below the surface. Several unexpected X-ray lines are also found in the experiment. Firstly, K X-rays are observed when Ar16+ ions which initially have no K shell holes interact with the surface. Secondly, if there are more than 2 M shell vacancies at the initial time, strong M alpha alpha two-electron-one-photon (TEOP) transitions are found in the collisions of Xe-28+,Xe-29+,Xe-30+ ions with the surface.

Electron emission induced by the interaction of highly charged ions Pb-207(q+) (24 <= q <= 36) with solid surface of Si(110)

The electron emission induced by highly charged ions Pb-207(q+) (24 <= q <= 36) interacting with Si(110) surface is reported. The result shows that the electron emission yield Y has a strong dependence on the projectile charge state q, incidence angle psi and impact energy E. In fitting the experimental data we found a nearly 1/tan psi dependence of Y. Theoretical analysis shows that these processes are closely related to the process of potential electron emission based on the classical over-the-barrier model.

Single mode and multimodes lasing emission from MEH-PPV doped polystyrene thin films with surface ripples formed by vapour-induced phase separation

We report single mode and multimodes lasing emission from conjugated polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) doped polystyrene ( PS) thin films with surface ripples. Surface ripples were formed by water vapour-induced phase separation. A single mode lasing emission at 606 nm with a line-width of less than 0.4 nm was obtained. The laser threshold was as low as 3.5 mu J pulse(-1). The side mode suppression ratio was 5.76 dB. The periodic changes of the refraction index in the MEH-PPV : PS blending film due to the phase separation should be attributed to the lasing actions.

Microstructure and Evolution of Mechanically-Induced Ultrafine Grain in Surface Layer of Al-Alloy Subjected to USSP

Experiments were conducted to investigate the ultrafine-grained (UFG) microstructures in the surface layer of an aluminum alloy 7075 heavily worked by ultrasonic shot peening. Conventional and high-resolution electron microscopy was performed at various depths of the deformed layer. Results showed that UFG structures were introdued into the surface layer of 62 μm thick. With increasing strain, the various microstructural features, e.g., the dislocation emission source, elongated microbands, dislocation cells, dislocation cell blocks, equiaxed submicro-, and nano-crystal grains etc., were successively produced. The grain subdivision into the subgrains was found to be the main mechanism responsible for grain refinement. The simultaneous evolution of high boundary misorientations was ascribed to the subgrain boundary rotation for accommodating further strains. Formed microstructures were highly nonequilibratory.  2002 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.

Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity

The photoluminescence (PL) intensity enhancement and suppression mechanism on surface plasmons (SPs) coupling with InGaN/GaN quantum wells (QWs) have been systematically studied. The SP-QW coupling behaviors in the areas of GaN cap layer coated with silver thin film were compared at different temperatures and excitation powers. It is found that the internal quantum efficiency (IQE) of the light emitting diodes (LEDs) varies with temperature and excitation power, which in turn results in anomalous emission enhancement and suppression tendency related to SP-QW coupling. The observation is explained by the balance between the extraction efficiency of SPs and the IQE of LEDs