Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors

SOI based wrap-gate silicon nanowire FETs are fabricated through electron beam lithography and wet etching. Dry thermal oxidation is used to further reduce the patterned fins cross section and transfer them into nanowires. Silicon nanowire FETs with different nanowire widths varying from 60 nm to 200 nm are fabricated and the number of the nanowires contained in a channel is also varied. The on-current (I-ON) and off-current (I-OFF) of the fabricated silicon nanowire FET are 0.59 mu A and 0.19 nA respectively. The subthreshold swing (SS) and the drain induced barrier lowering are 580 mV/dec and 149 mVN respectively due to the 30 nm thick gate oxide and 1015 cm(-3) lightly doped silicon nanowire channel. The nanowire width dependence of SS is shown and attributed to the fact that the side-gate parts of a wrap gate play a more effectual role as the nanowires in a channel get narrower. It seems the nanowire number in a channel has no effect on SS because the side-gate parts fill in the space between two adjacent nanowires.

Synthesis of high quality n-type CdS nanobelts and their applications in nanodevices

High quality n-type CdS nanobelts (NBs) were synthesized via an in situ indium doping chemical vapor deposition method and fabricated into field effect transistors (FETs). The electron concentrations and mobilities of these CdS NBs are around (1.0x10(16)-3.0x10(17))/cm(3) and 100-350 cm(2)/V s, respectively. An on-off ratio greater than 10(8) and a subthreshold swing as small as 65 mV/decade are obtained at room temperature, which give the best performance of CdS nanowire/nanobelt FETs reported so far. n-type CdS NB/p(+)-Si heterojunction light emitting diodes were fabricated. Their electroluminescence spectra are dominated by an intense sharp band-edge emission and free from deep-level defect emissions. (c) 2006 American Institute of Physics.

Fabrication of improved FD SOIMOSFETs for suppressing edge effect

FD SOI MOSFETs with MESA and Irradiated FD SOI MOSFETs with LOCOS isolation usually show the edge effect, that is, the leakage current called hump is generated in the subthreshold region. According to different reasons for generating the edge effect, rounded corner process and BTS structure are applied to improve device performance. The results indicate that the above two methods are effective to reduce the edge effect and qualified devices are fabricated successfully.

Role of the N*(1535) in eta ' production

We study the near-threshold eta ' production mechanism in nucleon-nucleon and pi N collisions under the assumption that subthreshold resonance N*(1535) is predominant. In an effective Lagrangian approach that gives a reasonable description to the pN -> pN eta and pi(-) p -> n eta reactions, we find that the excitation of N*(1535) resonance from the t- channel p exchange makes the dominate contribution to the pN -> pN eta ' process, and a value of 6.5 for the ratio of s(pp -> pp eta ') to sigma (pp -> pp eta ') is predicted. A strongcoupling strength ofN*(1535) to eta ' N (g(eta ' NN*)(2)/4 pi = 1.1) is extracted from a combined analysis to pp -> pp eta ' and pi N -> N eta ', and the possible implication to the intrinsic component of N*(1535) is explored.

Dynamics of strangeness production in heavy-ion collisions near threshold energies

Within the framework of the improved isospin-dependent quantum molecular dynamics (ImIQMD) model, the dynamics of strangeness (K-0,K-+, Lambda, and Sigma(-,0,+)) production in heavy-ion collisions near threshold energies is investigated systematically, with the strange particles considered to be produced mainly by inelastic collisions of baryon-baryon and pion-baryon. Collisions in the region of suprasaturation densities of the dense baryonic matter formed in heavy-ion collisions dominate the yields of strangeness production. Total multiplicities as functions of incident energies and collision centralities are calculated with the Skyrme parameter SLy6. The excitation function of strangeness production is analyzed and also compared with the KaoS data for K+ production in the reactions C-12 + C-12 and Au-197 + Au-197.

Measurement of K*(892)(0) and K-0 mesons in Al plus Al collisions at 1.9A GeV

A new measurement of subthreshold K*(892)(0) and K-0 production is presented. The experimental data complete the measurement of strange particles produced in Al + Al collisions at 1.9A GeV measured with the FOPI detector at SIS at GSI (Darmstadt). The K*(892)(0)/K-0 yield ratio is found to be 0.0315 +/- 0.006(stat.) +/- 0.012(syst.) and is in good agreement with the transport model prediction. These measurements provide information on the in-medium cross section of K+-pi(-) fusion, which is the dominant process in subthreshold K*(892)(0) production.