5 resultados para stress testing

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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With the advancement in network bandwidth and computing power, multimedia systems have become a popular means for information delivery. However, general principles of system testing cannot be directly applied to testing of multimedia systems on account of their stringent temporal and synchronization requirements. In particular, few studies have been made on the stress testing of multimedia systems with respect to their temporal requirements under resource saturation. Stress testing is important because erroneous behavior is most likely to occur under resource saturation. This paper presents an automatable method of test case generation for the stress testing of multimedia systems. It adapts constraint solving techniques to generate test cases that lead to potential resource saturation in a multimedia system. Coverage of the test cases is defined upon the reachability graph of a multimedia system. The proposed stress testing technique is supported by tools and has been successfully applied to a real-life commercial multimedia system. Although our technique focuses on the stress testing of multimedia systems, the underlying issues and concepts are applicable to other types of real-time systems.

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A second-order dynamic model based on the general relation between the subgrid-scale stress and the velocity gradient tensors was proposed. A priori test of the second-order model was made using moderate resolution direct numerical simulation date at high Reynolds number ( Taylor microscale Reynolds number R-lambda = 102 similar to 216) for homogeneous, isotropic forced flow, decaying flow, and homogeneous rotating flow. Numerical testing shows that the second-order dynamic model significantly improves the correlation coefficient when compared to the first-order dynamic models.

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The mechanical properties and fracture behavior of silicon nitride (SiNx) thin film fabricated by plasma-enhanced chemical vapor deposition is reported. Plane-strain moduli, prestresses, and fracture strengths of silicon nitride thin film; deposited both oil a bare Si substrate and oil a thermally oxidized Si substrate were extracted using bulge testing combined with a refined load-deflection model of long rectangular membranes. The plane-strain modu i and prestresses of SiNx thin films have little dependence on the substrates, that is, for the bare Si substrate, they are 133 +/- 19 GPa and 178 +/- 22 MPa, respectively, while for the thermally oxidized substrate, they are 140 +/- 26 Gila and 194 +/- 34 MPa, respectively. However, the fracture strength values of SiNx films grown on the two substrates are quite different, i.e., 1.53 +/- 0.33 Gila and 3.08 +/- 0.79 GPa for the bare Si substrate a A the oxidized Si substrate, respectively. The reference stresses were computed by integrating the local stress of the membrane at the fracture over the edge, Surface, and volume of the specimens and fitted with the Weibull distribution function. For SiNx thin film produced oil the bare Si Substrate, the Volume integration gave a significantly better agreement between data and model, implying that the volume flaws re the dominant fracture origin. For SiNx thin film grown on the oxidized Si substrate, the fit quality of surface and edge integration was significantly better than the Volume integration, and the dominant surface and edge flaws could be caused by buffered HF attacking the SiNx layer during SiO2 removal. Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.

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The Charpy impact fracture behaviour of unnotched specimens of phenolphthalein polyether ketone (PEK-C) was studied over a temperature range from room temperature to 220 degrees C by using an instrumented impact tester. The load-time and energy-time curves of PEK-C at different temperatures were recorded. From these curves, some important parameters, such as the maximum impact load, the maximum stress, the total impact energy, the crack initiation energy, the crack propagation energy etc., were obtained and their temperature dependences of PEK-C were investigated. The point of 100 percent maximum load on the load-time trace was shown to be the yield point. Two parameters, the ductile ratio (D.R.) and the ductility index (D.I.) were applied to characterize the ductility of PEK-C and their relationships to the relaxation processes were discussed.