52 resultados para spin transport

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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We theoretically investigate the spin transport in two-terminal mesoscopic rings in the presence of both the Rashba spin-orbit interaction (RSOI) and the Dresselhaus spin-orbit interaction (DSOI). We find that the interplay between the RSOI and DSOI breaks the original cylindric symmetry of the mesoscopic rings and consequently leads to the anisotropic spin transport, i.e., the conductance is sensitive to the positions of the incoming and outgoing leads. The anisotropic spin transport can survive even in the presence of disorder caused by impurity elastic scattering in a realistic system.

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We investigate theoretically the charge and spin transport in quantum wires grown along different crystallographic planes in the presence of the Rashba spin-orbit interaction (RSOI) and the Dresselhaus spin-orbit interaction (DSOI). We find that changing the crystallographic planes leads to a variation of the anisotropy of the conductance due to a different interplay between the RSOI and DSOI, since the DSOI is induced by bulk inversion asymmetry, which is determined by crystallographic plane. This interplay depends sensitively on the crystallographic planes, and consequently leads to the anisotropic charge and spin transport in quantum wires embedded in different crystallographic planes.

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We study the spin-dependent electron transport in a special magnetic-electric superlattice periodically modulated by parallel ferromagnetic metal stripes and Schottky normal-metal stripes. The results show that, the spin-polarized current can be well controllable by modulating the magnetic strength of the ferromagnetic stripes or the voltage applied to the Schottky normal-metal stripes. It is obvious that, to the system of the magnetic superlattice, the polarized current can be enhanced by the magnetic strength of ferromagnetic stripes. Nevertheless, it is found that, for the magnetic-electric superlattice, the polarized current can also be remarkably advanced by the voltage applied to the Schottky normal-metal stripes. These results may indicate a useable approach for tunable spintronic devices. (c) 2006 Elsevier B.V. All rights reserved.

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Longitudinal spin transport in diluted magnetic semiconductor superlattices is investigated theoretically. The longitudinal magnetoconductivity (MC) in such systems exhibits an oscillating behavior as function of an external magnetic field. In the weak magnetic-field region the giant Zeeman splitting plays a dominant role that leads to a large negative magnetoconductivity. In the strong magnetic-field region the MC exhibits deep dips with increasing magnetic field. The oscillating behavior is attributed to the interplay between the discrete Landau levels and the Fermi surface. The decrease of the MC at low magnetic field is caused by the s-d exchange interaction between the electron in the conduction band and the magnetic ions. The spin polarization increases rapidly with increasing magnetic field and the longitudinal current becomes spin polarized in strong magnetic field. The effect of spin-disorder scattering on MC is estimated numerically for low magnetic fields and found to be neglectible for our system.

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The Rashba spin splitting of the minibands of coupled InAs/GaAs pyramid quantum dots is investigated using the k center dot p method and valence force field model. The Rashba splitting of the two dimensional miniband in the lateral directions is found due to the structure inversion asymmetry in the vertical direction while the miniband in the vertical direction has no Rashba spin splitting. As the space between dots increases, the Rashba coefficients decrease and the conduction-band effective mass increases. This Rashba spin splitting of the minibands will significantly affect the spin transport properties between quantum dots. (C) 2008 American Institute of Physics.

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We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. This indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning.

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The ballistic spin transport in one-dimensional waveguides with the Rashba effect is studied. Due to the Rashba effect, there are two electron states with different wave vectors for the same energy. The wave functions of two Rashba electron states are derived, and it is found that their phase depend on the direction of the circuit and the spin directions of two states are perpendicular to the circuit, with the +pi/2 and -pi/2 angles, respectively. The boundary conditions of the wave functions and their derivatives at the intersection of circuits are given, which can be used to investigate the waveguide transport properties of Rashba spin electron in circuits of any shape and structure. The eigenstates of the closed circular and square loops are studied by using the transfer matrix method. The transfer matrix M(E) of a circular arc is obtained by dividing the circular arc into N segments and multiplying the transfer matrix of each straight segment. The energies of eigenstates in the closed loop are obtained by solving the equation det[M(E)-I]=0. For the circular ring, the eigenenergies obtained with this method are in agreement with those obtained by solving the Schrodinger equation. For the square loop, the analytic formula of the eigenenergies is obtained first The transport properties of the AB ring and AB square loop and double square loop are studied using the boundary conditions and the transfer matrix method In the case of no magnetic field, the zero points of the reflection coefficients are just the energies of eigenstates in closed loops. In the case of magnetic field, the transmission and reflection coefficients all oscillate with the magnetic field; the oscillating period is Phi(m)=hc/e, independent of the shape of the loop, and Phi(m) is the magnetic flux through the loop. For the double loop the oscillating period is Phi(m)=hc/2e, in agreement with the experimental result. At last, we compared our method with Koga's experiment. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3253752]

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We have theoretically investigated ballistic electron transport through a combination of magnetic-electric barrier based on a vertical ferromagnet/two-dimensional electron gas/ferromagnet sandwich structure, which can be experimentally realized by depositing asymmetric metallic magnetic stripes both on top and bottom of modulation-doped semiconductor heterostructures. Our numerical results have confirmed the existence of finite spin polarization even though only antisymmetric stray field B-z is considered. By switching the relative magnetization of ferromagnetic layers, the device in discussion shows evident magnetoconductance. In particular, both spin polarization and magnetoconductance can be efficiently enhanced by proper electrostatic barrier up to the optimal value relying on the specific magnetic-electric modulation. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3041477]

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We theoretically investigate the electron transport and spin polarization of two coupled quantum wells with Dresselhaus spin-orbit interaction. In analogy with the optical dual-channel directional coupler, the resonant tunneling effect is treated by the coupled-mode equations. We demonstrate that spin-up and -down electrons can be completely separated from each other for the system with an appropriate system geometry and a controllable barrier. Our result provides a new approach to construct spin-switching devices without containing any magnetic materials or applying a magnetic field. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2981204]

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We study the theory of temperature-dependent electron transport, spin polarization, and spin accumulation in a Rashba spin-orbit interaction (RSOI) quantum wire connected nonadiabatically to two normal conductor electrode leads. The influence of both the wire-lead connection and the RSOI on the electron transport is treated analytically by means of a scattering matrix technique and by using an effective free-electron approximation. Through analytical analysis and numerical examples, we demonstrate a simple way to design a sensitive spin-transfer switch that operates without applying any external magnetic fields or attaching ferromagnetic contacts. We also demonstrate that the antisymmetry of the spin accumulation can be destroyed slightly by the coupling between the leads and the wire. Moreover, temperature can weaken the polarization and smear out the oscillations in the spin accumulation.

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Current fluctuations can provide additional insight into quantum transport in mesoscopic systems. The present work is carried out for the fluctuation properties of transport through a pair of coupled quantum dots which are connected with ferromagnetic electrodes. Based on an efficient particle-number-resolved master equation approach, we are concerned with not only fluctuations of the total charge and spin currents, but also of each individual spin-dependent component. As a result of competition among the spin polarization, Coulomb interaction, and dot-dot tunnel coupling, rich behaviors are found for the self- and mutual-correlation functions of the spin-dependent currents.

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We theoretically investigate the charge transport in the quantum waveguides in the presence of the Rashba spin-orbit interaction and the Dresselhaus spin-orbit interaction. We find that the interplay between the Rashba spin-orbit interaction and Dresselhaus spin-orbit interaction can induce a symmetry breaking and consequently leads to the anisotropic charge transport in the quantum waveguides, the conductance through the quantum waveguides depends sensitively on the crystallographic orientations of the quantum waveguides. The anisotropy of the charge transport can even survive in the presence of disorder effect in realistic systems.

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We have theoretically investigated ballistic electron transport through a combination of magnetic-electric barrier based on a vertical ferromagnet/two-dimensional electron gas/ferromagnet sandwich structure, which can be experimentally realized by depositing asymmetric metallic magnetic stripes both on top and bottom of modulation-doped semiconductor heterostructures. Our numerical results have confirmed the existence of finite spin polarization even though only antisymmetric stray field B-z is considered. By switching the relative magnetization of ferromagnetic layers, the device in discussion shows evident magnetoconductance. In particular, both spin polarization and magnetoconductance can be efficiently enhanced by proper electrostatic barrier up to the optimal value relying on the specific magnetic-electric modulation. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3041477]

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We theoretically investigate the spin-dependent transport through Cd1-xMnxTe diluted magnetic semiconductor (DMS) quantum dots (QD's) under the influence of both the external electric field and magnetic field using the recursion method. Our results show that (1) it can get a 100% polarized electric current by using suitable structure parameters; (2) for a fixed Cd1-xMnxTe DMS QD, the wider the system is, the more quickly the transmission coefficient increases; (3) for a fixed system length, the transmission peaks of the spin-up electrons move to lower Fermi energy with increasing Cd1-xMnxTe DMS QD radius, while the transmission of the spin-down electrons is almost unchanged; (4) the spin-polarized effect is slightly increased for larger magnetic fields; (5) the external static electric field moves the transmission peaks to higher or lower Fermi energy depending on the direction of the applied field; and (6) the spin-polarized effect decreases as the band offset increases. Our calculated results may be useful for the application of Cd1-xMnxTe DMS QD's to the spin-dependent microelectronic and optoelectronic devices.

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The energy dispersion of an electron in a double quantum wire with a diluted magnetic semiconductor barrier in between is calculated. An external magnetic field modifies significantly the energy dispersion of the electron which is different for the two spin states. The conductance exhibits many interesting peaks and dips which are directly related to the energy dispersions of the different electron spin states. These phenomena are attributed to the interwell coupling which can be tuned by the magnetic field due to the s-d exchange interaction.