Self-assembled InAs/GaAs quantum dots and quantum dot laser

Systematic study of molecular beam epitaxy-grown self-assembled In(Ga)As/GaAs, In-AlAs/AlGaAs/GaAs, and InAs/InAlAs/InP quantum dots (QDs) is demonstrated. By adjusting growth conditions, surprising alignment, preferential elongation, and pronounced sequential coalescence of dots under the specific condition are realized. Room-temperature (RT) continuous-wave (CW) lasing at the wavelength of 960 nm with output power of 1 W is achieved from vertical coupled InAs/GaAs QDs ensemble. The RT threshold current density is 218 A/cm(2). An RT CW output power of 0.53 W ensures at least 3 000 h lasing (only drops 0.83 db). This is one of the best results ever reported.

Nematic ordering pattern formation in the process of self-organization of microtubules in a gravitational field

Papaseit et al. (Proc. Nati. Acad. Sci. U.S.A. 97, 8364, 2000) showed the decisive role of gravity in the formation of patterns by assemblies of microtubules in vitro. By virtue of a functional scaling, the free energy for MT systems in a gravitational field was constructed. The influence of the gravitational field on MT's self-organization process, that can lead to the isotropic to nematic phase transition, is the focus of this paper. A coupling of a concentration gradient with orientational order characteristic of nernatic ordering pattern formation is the new feature emerging in the presence of gravity. The concentration range corresponding to a phase coexistence region increases with increasing g or NIT concentration. Gravity facilitates the isotropic to nernatic phase transition leading to a significantly broader transition region. The phase transition represents the interplay between the growth in the isotropic phase and the precipitation into the nematic phase. We also present and discuss the numerical results obtained for local NIT concentration change with the height of the vessel, order parameter and phase transition properties.

A uniform 290 nm periodic square structure on ZnO fabricated by two-beam femtosecond laser ablation

A uniform submicron periodic square structure was fabricated on the surface of ZnO by a technique of two linearly polarized femtosecond laser beams with orthogonal polarizations ablating material alternately. The formed two-dimensional ordering submicron structure consists of close-packed submicron squares with a spacial periodicity of 290 nm, which arises from the intercrossing of two orthogonal submicron ripple structures induced by the two beams respectively. The result demonstrates a noninterference effect of two-beam ablation based on the alternate technique, which should come from the polarization-dependent enhancement of the subwavelength ripple structure and the large interval of two alternate pulses. This two-beam alternate ablation technique is expected to open up prospects for the submicron fabrication of wide-bandgap materials.

Phase unwrapping based on branch cut placing and reliability ordering

A new 2-D quality-guided phase-unwrapping algorithm, based on the placement of the branch cuts, is presented. Its framework consists of branch cut placing guided by an original quality map and reliability ordering performed on a final quality map. To improve the noise immunity of the new algorithm, a new quality map, which is used as the original quality map to guide the placement of the branch cuts, is proposed. After a complete description of the algorithm and the quality map, several wrapped images are used to examine the effectiveness of the algorithm. Computer simulation and experimental results make it clear that the proposed algorithm works effectively even when a wrapped phase map contains error sources, such as phase discontinuities, noise, and undersampling. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Phase unwrapping based on branch cut placing and reliability ordering

A new 2-D quality-guided phase-unwrapping algorithm, based on the placement of the branch cuts, is presented. Its framework consists of branch cut placing guided by an original quality map and reliability ordering performed on a final quality map. To improve the noise immunity of the new algorithm, a new quality map, which is used as the original quality map to guide the placement of the branch cuts, is proposed. After a complete description of the algorithm and the quality map, several wrapped images are used to examine the effectiveness of the algorithm. Computer simulation and experimental results make it clear that the proposed algorithm works effectively even when a wrapped phase map contains error sources, such as phase discontinuities, noise, and undersampling. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Distinct two dimensional lateral ordering of self-assembled quantum dots

We report a quantum dot (QD) ensemble structure in which the in-plane arrangements of the dots are in a hexagonal way while the dots are also vertically aligned. Such a distinct lateral ordering of QDs is achieved on a planar GaAs(l 0 0) rather than on a prepatterned substrate by strain-mediated multilayer vertical stacking of the QDs. The analysis indicates that the strain energy of the lateral island-island interaction is minimum for arrangement of the hexagonal ordering. The ordered dots demonstrate strong photoluminescence (PL) emission at room temperature (RT) and the full width at half maximum of PL peak at RT is only 50 meV. (C) 2007 Elsevier B.V. All rights reserved.

Magnetic ordering and irreversible magnetization between ZFC and FC states in RCo5Ga7 compounds

The magnetic properties of RCo5Ga7 (R = Y, Tb, Dy, Ho and Er) compounds which crystallize in the ScFe6Ga6-type structure have been studied. The compounds with R, Y, Tb, Dy, Ho and Er display behaviour similar to semiconductors. The Co transition metal sublattice is ferrimagnetic with a very low spontaneous magnetization. The ferrimagnetic ordering observed for R = Y, Tb, Dy, Ho and Er is due to the transition metal sublattice with transition temperatures at about 295 K. At low temperatures, the magnetic ordering for R Tb, Dy, Ho and Er is due to the rare-earth sublattice, which is ferromagnetic with a Curie temperature below 5 K. By fitting the linear part of the inverse magnetization, the effective magnetic moment of the R ion is found to be close to its expected theoretical value, with paramagnetic Curie temperatures below 5 K. Due to the paramagnetic nature of the R sublattice above 60 K, the ferrimagnetic ordering temperature of the Co sublattice does not vary with the type of rare-earth ion. The irreversibility of the magnetization of YCo5Ga7, as measured in zero-field cooled (ZFC) and field cooled (FC) states, is attributed to movement of domain walls. Application of a large enough applied field completes the movement of the domain wall from the low-temperature to the high-temperature one at 5 K. With a very low magnetic field 100 Oe, the difference between the ZFC and the FC shrinks. (C) 2004 Elsevier B.V. All rights reserved.

Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer

InAs quantum dots (QDs) were grown On Ultra-thin In0.15Ga0.85As strained layers by molecular beam epitaxy on GaAs (00 1) substrates. Combining reflection high-energy electron diffraction, atomic force microscopy and transmission electron microscopy, we analyzed the stress field of dislocations in the strained layer/substrate interface. Specially, we revealed the relative position of QDs and dislocations. We found that the difference of the stress field around dislocations is prominent when the strained layer is ultra-thin and the stress field will directly affect the following growth. On the strained layer surface, In0.15Ga0.85As ridges will form at the inclined upside of dislocations. Then, InAs QDs will prefer nucleating on the ridges, there is relatively small stress between InAs and In0.15Ga0.85As. By selecting ultra-thin In0.15Ga0.85As layer (50 nm) and controlling the QD layer at just form QDs, we obtained ordered InAs QDs. (C) 2004 Elsevier B.V. All rights reserved.

Development of cross-hatch grid morphology and its effect on ordering growth of quantum dots

We investigate the development of cross-hatch grid surface morphology in growing mismatched layers and its effect on ordering growth of quantum dots (QDs). For a 60degrees dislocation (MD), the effective part in strain relaxation is the part with the Burgers vector parallel to the film/substrate interface within its b(edge) component; so the surface stress over a MD is asymmetric. When the strained layer is relatively thin, the surface morphology is cross-hatch grid with asymmetric ridges and valleys. When the strained layer is relatively thick, the ridges become nearly symmetrical, and the dislocations and the ridges inclined-aligned. In the following growth of InAs, QDs prefer to nucleate on top of the ridges. By selecting ultra-thin In0.15Ga0.85As layer (50nm) and controlling the QDs layer at just formed QDs, we obtained ordered InAs QDs. (C) 2004 Elsevier B.V. All rights reserved.

Dependence of elastic strain field on the self-organized ordering of quantum dot superlattices

A systematic investigation of the strain distribution of self-organized, lens-shaped quantum dot in the case of growth direction on (001) substrate was presented. The three-dimensional finite element analysis for an array of dots was used for the strain calculation. The dependence of the strain energy density distribution on the thickness of the capping layer was investigated in detail when the elastic characteristics of the matrix material were anisotropic. It is shown that the elastic anisotropic greatly influences the stress, strain, and strain energy density in the quantum dot structures. The anisotropic ratio of the matrix material and the combination with different thicknesses of the capping layer, may lead to different strain energy density minimum locations on the capping layer surface, which can result in various vertical ordering phenomena for the next layer of quantum dots, i.e. partial alignment, random alignment, and complete alignment.

Self-organized hexagonal ordering of quantum dot arrays

We report a structure of (In, Ga)As/GaAs quantum dots which are vertically correlated and laterally aligned in a hexagonal way thus forming three-dimensionally ordered arrays. The growth pathway is based on a mechanism of self-assembly by strain-mediated multilayer vertical stacking on a planar GaAs(100) substrate, rather than molecular-beam epitaxy on a prepatterned substrate. The strain energy of lateral island-island interaction is minimum for the arrangement of hexagonal ordering. However, realization of hexagonal ordering not only depends on a complicated trade-off between lateral and vertical island-island interaction but is also related to a delicate and narrow growth kinetics window.

Origin of the vertical-anticorrelation arrays of InAs/InAlAs nanowires with a fixed layer-ordering orientation

InAs/In0.52Al0.48As nanowire multilayer arrays were grown on (001) InP substrate by molecular-beam epitaxy. The structural property of the arrays was investigated by transmission electron microscopy. The results clearly showed the formation of InAs nanowires, evolution of InAs/InAlAs interface, and composition and thickness modulations in the InAlAs spacer layer. A fixed spatial ordering of InAs/InAlAs nanowires was revealed for all the samples. Regardless of the change in InAlAs spacer thickness of different samples, (i) the nanowires of one InAs layer are positioned above the nanowire spacing in the previous InAs layer and (ii) the layer-ordering orientation angle of nanowires is fixed. The results were explained from the viewpoint of the growth kinetics. The effect of InAlAs spacers is suggested to play an important role on the spatial ordering of the nanowire arrays. (C) 2002 American Institute of Physics.

Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate

Self-assembled InAs quantum dots (QDs) in InAlAs grown on (001) and (311)B InP substrates by molecular beam epitaxy (MBE) have been comparatively investigated. A correlated study of atomic force microscopy (AFM) and photoluminescence (PL) disclosed that InAs QDs grown on high-index InP substrates can lead to high density and uniformity. By introducing a lattice-matched InAlGaAs overlayer on InAlAs buffer, still more dense and uniform InAs QDs were obtained in comparison with InAs QDs formed with only InAlAs matrix. Moreover, two-dimensional well-ordered InAs dots with regular shape grown on (311)B InP substrates are reported for the first time. We explained this exceptional phenomenon from strain energy combined with kinetics point of view. (C) 2000 Elsevier Science B.V. All rights reserved.

Raman-forbidden mode and oxygen ordering in Bi2Sr2-xLaxCuO6+gamma single crystals annealed in oxygen

A Raman-forbidden phonon mode at about 840 cm(-1) is observed popularly on the surface of pun and La-doped Bi2Sr2-xLaxCuO6+y (0 less than or equal to x less than or equal to 0.8) single crystals annealed in oxygen. A remarkable excitation dependence of this additional line is found. Based on the properties of the structure of the Bi-O layer with excess oxygen atoms and the similarity in the appearance of the Raman-forbidden modes between RBa2Cu3Ox (R = Y, Nd, Gd, Pr) and Bi2Sr2-xLaxCuO6+y systems, we attribute the manifestation of this additional line to the ordering of the interstitial oxygen in the Bi-O layers. Our results provide Raman evidences for confirming that the ordering of the movable oxygen may exist universally in high-temperature superconductors.