Routing scheme, permutation properties, and optical implementation of a four-shuffle-exchange-based Omega network

The routing scheme and some permutation properties of a four-shuffle-exchange-based Omega network are discussed. The corresponding optical setup, which is composed of 2-D phase spatial light modulators and calcite plates, is proposed and demonstrated through mapping the inputs to a 2-D array. Instead of one shuffle-exchange followed by one switching operation as in ordinary Omega networks, in our presented system, the shuffle interconnection embraced in the switches is accomplished simply by varying the switching structure of each stage. For the proposed polarization-optical modules, the system is compact in structure, efficient in performance, and insensitive to the environment. (C) 1997 Society of Photo-Optical Instrumentation Engineers.

Elasticity, stability, and ideal strength of beta-SiC in plane-wave-based ab initio calculations

On the basis of the pseudopotential plane-wave method and the local-density-functional theory, this paper studies energetics, stress-strain relation, stability, and ideal strength of beta-SiC under various loading modes, where uniform uniaxial extension and tension and biaxial proportional extension are considered along directions [001] and [111]. The lattice constant, elastic constants, and moduli of equilibrium state are calculated and the results agree well with the experimental data. As the four SI-C bonds along directions [111], [(1) over bar 11], [11(1) over bar] and [111] are not the same under the loading along [111], internal relaxation and the corresponding internal displacements must be considered. We find that, at the beginning of loading, the effect of internal displacement through the shuffle and glide plane diminishes the difference among the four Si-C bonds lengths, but will increase the difference at the subsequent loading, which will result in a crack nucleated on the {111} shuffle plane and a subsequently cleavage fracture. Thus the corresponding theoretical strength is 50.8 GPa, which agrees well with the recent experiment value, 53.4 GPa. However, with the loading along [001], internal relaxation is not important for tetragonal symmetry. Elastic constants during the uniaxial tension along [001] are calculated. Based on the stability analysis with stiffness coefficients, we find that the spinodal and Born instabilities are triggered almost at the same strain, which agrees with the previous molecular-dynamics simulation. During biaxial proportional extension, stress and strength vary proportionally with the biaxial loading ratio at the same longitudinal strain.

Md Simulation Of Dislocation Mobility During Cutting With Diamond Tip On Silicon

By means of Tersoff and Morse potentials, a three-dimensional molecular dynamics simulation is performed to study atomic force microscopy cutting on silicon monocrystal surface. The interatomic forces between the workpiece and the pin tool and the atoms of workpiece themselves are simulated. Two partial edge dislocations are introduced into workpiece Si, it is found that the motion of dislocations does not occur during the atomic force microscopy cutting processing. Simulation results show that the shear stress acting on dislocations is far below the yield strength of Si. (c) 2008 Elsevier Ltd. All rights reserved.

基于第一原理的固体变形、强度及外延成长研究

本文基于第一原理的能量计算和稳定性理论，研究了双原子组分材料β-SiC在各种载荷方式下的力学性质：弹性行为、应力－应变关系、稳定性和强度。由于沿[111]方向加载时四个Si-C键是不等价的，所以有相对内位移出现。本文的分析揭示了如下事实：当载荷较小时，内位移的影响不明显；当载荷较大时，影响则越来越显著；裂纹在{111}shuffle面上成核，并最终导致材料以解理的形式破坏。在沿[001]单轴拉伸的情况下，spinodal失稳（即体破坏）和Born失稳被同时触发，并体现了一种级联破坏的模式。基于同样的理论和方法，进一步研究了铝在各种加载方式下的响应及分叉行为。得到了铝的沿[001]和[111]方向单轴加载和单轴应变、及沿[010]和[001]方向的双轴比例加载情况下的、完整的能量－应变曲线和应力－应变曲线。详细地分析了沿[001]方向的单轴加载情况下的稳定性及分叉行为。研究结果表明，除了自然的面心立方结构外，所有其它的、应力自由的立方结构都是不稳定的。对于铝而言，稳定的面心立方结构不能从沿任何等价的[001]和[111]方向的单轴压缩的方法而得到。本文的结果丰富了现存的第一原理数据库。基于第一原理的能量计算，分析了碱金属K、Rb和Cs在如下四个结晶面上外延成长的行为，即{001}、{110}、{111}和{201}。发现除了在{110}面以外，在其它的三个结晶面上都发现有亚稳态存在。当外延应变为拉伸状态时，在{001}和{111}面上存在着亚稳态，其结构为b.c.c.结构。当外延应变为压缩状态时，在{201}面存在一个亚稳态，是一个超结构，。亚稳态的存在显著地影响着材料外延成长的软化行为。基于正交变形路径，并考虑了温度的影响以后，解释了实验上观察到的碱金属从h.c.p.结构转变到b.c.c.结构的现象。本文第五章归纳整理在赝势平面波框架下的总能、力和应力在实空间和动量空间的解析表达式，以方便参阅和使用。

Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface

Misfit defects in a 3C-SiC/Si (001) interface were investigated using a 200 kV high-resolution electron microscope with a point resolution of 0.194 nm. The [110] high-resolution electron microscopic images that do not directly reflect the crystal structure were transformed into the structure map through image deconvolution. Based on this analysis, four types of misfit dislocations at the 3C-SiC/Si (001) interface were determined. In turn, the strain relaxation mechanism was clarified through the generation of grow-in perfect misfit dislocations (including 90 degrees Lomer dislocations and 60 degrees shuffle dislocations) and 90 partial dislocations associated with stacking faults. (C) 2009 American Institute of Physics. [doi:10.1063/1.3234380]

THE MATRIX ANALYSIS FOR AN OPTICAL FREE-SPACE SWITCHING NETWORK AND AN OPTICAL CROSSOVER NETWORK WITH 4-FUNCTION INTERCHANGE NODES

A matrix analysis for free-space switching networks, such as perfect shuffle-exchange omega, crossover and Banyan is presented. On the basis of matrix analysis, the equivalence of these three switching networks and the route selection between input and output ports are simply explained. Furthermore, an optical crossover switching network, where MQW SEED arrays are used as electrically addressed four-function interchange nodes, is described and the optical crossover interconnection of 64 x 64, and high-speed four-function, interchange nodes is demonstrated in the experiment.