Surface relief resonant Brewster niters with multiple channels

In this paper, a new type of resonant Brewster filters (RBF) with surface relief structure for the multiple channels is first presented by using the rigorous coupled-wave analysis and the S-matrix method. By tuning the depth of homogeneous layer which is under the surface relief structure, the multiple channels phenomenon is obtained. Long range, extremely low sidebands and multiple channels are found when the RBF with surface relief structure is illuminated with Transverse Magnetic incident polarization light near the Brewster angle calculated with the effective media theory of sub wavelength grating. Moreover, the wavelengths of RBF with surface relief structure can be easily shifted by changing the depth of homogeneous layer while its optical properties such as low sideband reflection and narrow band are not spoiled when the depth is changed. Furthermore, the variation of the grating thickness does not effectively change the resonant wavelength of RBF, but have a remarkable effect on its line width, which is very useful for designing such filters with different line widths at desired wavelength.

Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)

Crack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants c and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interlayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In-doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

An analysis of the recent severe storm surge disaster events in China

The economic loss caused by the storm surge disasters is much higher than that caused by any other marine disaster in China, the loss from the severe storm surge disaster being the highest. Statistics show that there were 62 typhoon landings over the east-southeast coast of China since 1990, three of which, occurring in 1992, 1994 and 1997, respectively, caused the most severe damage. The direct economic losses due to these events are 9.3, 17.0 and 30 billion yuan (RMB, or about 1.7, 2.6 and 3.8 billion USD, respectively), which is much greater than the loss of 5.5 billion yuan (RMB) on an average every year during the 1989-1991 period. This paper makes a comparative analysis of the damage caused by the three events and presents an overview of progress of precautions against storm surge disaster in China. The suggested counter measures to mitigate the loss from the severe storm surge disasters in China is as follows: (1) Raise the whole society awareness of precaution against severe storm surge disaster; (2) Work out a new plan for building sea walls; (3) Improve and perfect the available warning and disaster relief command system; (4) Develop the insurance service in order to promptly mitigate the loss caused by severe storm surge disaster event.