Comparison of cooling rates for hot carriers in GaAs AlAs quantum wells based on macroscopic and microscopic phonon models

By using three analytical phonon models in quantum wells-the slab model, the guided-mode model, and the improved version of the Huang-Zhu model [Phys. Rev. B 38, 13 377 (1998)], -and the phonon modes in bulk, the energy-loss rates of hot carriers due to the Frohlich potential scattering in GaAs/AlAs multiple quantum wells (MQW's) are calculated and compared to those obtained based on a microscopic dipole superlattice model. In the study, a special emphasis is put on the effects of the phonon models on the hot-carrier relaxation process when taking the hot-phonon effect into account. Our numerical results show that, the calculated energy-loss rates based on the slab model and on the improved Huang-Zhu model are almost the same when ignoring the hot-phonon effect; however, with the hot phonon effect considered, the calculated cooling rate as well as the hot phonon occupation number do depend upon the phonon models to be adopted. Out of the four analytical phonon models investigated, the improved Huang-Zhu model gives the results most close to the microscopic calculation, while the guided-mode model presents the poorest results. For hot electrons with a sheet density around 10(12)/cm(2), the slab model has been found to overestimate the hot-phonon effect by more than 40% compared to the Huang-Zhu model, and about 75% compared to the microscopic calculation in which the phonon dispersion is fully included. Our calculation also indicates that Nash's improved version [J. Lumin. 44, 315 (1989)] is necessary for evaluating the energy-loss rates in quantum wells of wider well width, because Huang-Zhu's original analytical formulas an only approximately orthogonal for optical phonons associated with small in-plane wave numbers. [S0163-1829(99)08919-5].

A new model for the energy release rate of fibre/matrix interfacial fracture

On the basis of the well-known shear-lag analysis of fibre/matrix interface stresses and the assumption of identical axial strains in the fibre and matrix, a new model for predicting the energy release rate of interfacial fracture of the fibre pull-out test model is attempted. The expressions for stresses in the fibre, matrix and interface are derived. The formula for interfacial debonding energy release rate is given. Numerical calculations are conducted and the results obtained are compared with those of the existing models.

Effect of Cold Rolling Ratio and Heating Rate of Batch Annealing on Textures of Micro-Carbon Steel Sheet

在四辊冷轧试验机和Gleeble-1500试验机上进行了热轧微碳钢板的冷轧和退火试验。用D/max-RC衍射仪测量了试样的,/”层织构,并用Roe软件进行了ODF分析。研究表明,所研究的热轧微碳深冲板压下率约为75%,退火升温速度为20-40℃/h时,试样为{111}织构特征；压下率较大(80%)时,退火织构为较弱的{111}组分。无论{111}织构还是非{111}织构都是在形核阶段开始形成,在晶粒长大优先长大,受到定向形核和选择生长双重机制的作用。

Debonding and cracking energy release rate of the fiber/matrix interface

An investigation of fiber/matrix interfacial fracture energy is presented in this paper. Several existing theoretical expressions for the fracture energy of interfacial debonding are reviewed. For the single-fiber/matrix debonding and pull-out experimental model, a study is carried out on the effect of interfacial residual compressive stress and friction on interface cracking energy release rate.

Statistical formulation and experimental determination of growth rate of micrometre cracks under impact loading

A new statistical formulation and a relevant experimental approach to determine the growth rate of microcracks were proposed. The method consists of experimental measurements and a statistical analysis' on the basis of the conservation law of number density of microcracks in phase space. As a practical example of the method, the growth rate of microcracks appearing in an aluminium alloy subjected to planar impact loading was determined to be ca. 10 mu m/mu s under a tensile stress of 1470 MPa and load duration between 0.26 mu s and 0.80 mu s.

Asymmetry of the photoionization rate of H atoms by a sequence of one-cycle laser pulses

Using an unperturbed scattering theory, the characteristics of H atom photoionization are studied respectively by a linearly- and by a circularly- polarized one-cycle laser pulse sequence. The asymmetry for photoelectrons in two directions opposite to each other is investigated. It is found that the asymmetry degree varies with the carrier-envelope (CE) phase, laser intensity, as well as the kinetic energy of photoelectrons. For the linear polarization, the maximal ionization rate varies with the CE phase, and the asymmetry degree varies with the CE phase in a sine-like pattern. For the circular polarization, the maximal ionization rate keeps constant for various CE phases, but the variation of asymmetry degree is still in a sine-like pattern.

Monte Carlo simulation of cooling induced by parametric resonance

We demonstrate that the parametric resonance in a magnetic quadrupole trap can be exploited to cool atoms by using Bird's method. In our programme the parametric resonance was realized by anisotropically modulating the trap potential. The modulation frequency dependences of temperature and fraction of the trapped atoms are explored. Furthermore, the temperature after the modulation as functions of the modulation amplitude and the mean elastic collision time are also studied. These results are valuable for the experiment of parametric resonance in a quadrupole trap.

High rate of chimeric gene origination by retroposition in plant genomes

Retroposition is widely found to play essential roles in origination of new mammalian and other animal genes. However, the scarcity of retrogenes in plants has led to the assumption that plant genomes rarely evolve new gene duplicates by retroposition, de

Estimation of the natural purification rate of a eutrophic lake after pollutant removal

Pollution resulting from increased human activities is threatening Lake Donghu, its effects being characterized by serious eutrophication. A steady increase of phosphorus loading is the most important factor of the lake eutrophication. Pollution external control projects are being implemented and will be accomplished before the year 2010. In order to predict the restoration rate by the lake's self-purification after the projects of external control, a model of predicting the removal rate of total phosphorus (TP) from lake water is developed, and a brief method of estimating the release and export rate of sediment phosphorus is suggested. Results show that, on the premise of external loading fully controlled. The restoration needs about 55 years or more. Obviously, the great P pool in the sediment will be a limiting factor of preventing the improvement of water quality after the external loading is under control. Based on the estimation we conclude that after the external control projects before 2010, in order to restore the lake in a few years, although highly cost, the first step must be the sediment dredging to remove internal loading. The second step is diverting water of River Changjiang into the lake to accelerate the improvement of lake water. Otherwise, removal of pollutant sources will become meaningless. (c) 2006 Elsevier B.V. All rights reserved.

Growing 20 cm Long DWNTs/TWNTs at a Rapid Growth Rate of 80-90 mu m/s

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Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition

The Al composition of metalorganic chemical vapor deposition (MOCVD)-grown AlGaN alloy layers is found to be greatly influenced by the parasitic reaction between ammonia (NH3) and trimethylaluminum (TMAI). The growth process of AlN is carefully investigated by monitoring the in situ optical reflection. The abnormal dependencies of growth rate on growth temperature, reactor pressure, and flux of NH3 are observed and can be well explained by the effect of parasitic reaction. The increase of growth rate with increasing flux of TMAI is found to depend on the growth temperature and reactor pressure due to the presence of parasitic effect. A relatively low growth temperature and a reduced reactor pressure are suggested for the effective decrease of parasitic reaction during the MOCVD growth of AlN and probably lead to a more effective incorporation of Al into the AlGaN layers. (c) 2005 Elsevier B.V. All rights reserved.

The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy

The growth rate of GaN buffer layers on sapphire grown by metalorganic vapor-phase epitaxy (MOVPE) in an atmospheric pressure, two-channel reactor was studied. The growth rate, as measured using laser reflectance, was found to be dependent on growth temperature, molar flow rate of the sources tin this case, trimethylgallium and ammonia) and the input configuration of sources into the reactor. A model of the GaN buffer layer growth process by MOVPE is proposed to interpret the experimental evidence. (C) 1998 Elsevier Science B.V. All rights reserved.