High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

Optimized AlGaN/AlN/GaN high electron mobility transistors (HEMTs) structures were grown on 2-in semi-insulating (SI) 6H-SiC substrate by metal-organic chemical vapor deposition (MOCVD). The 2-in. HEMT wafer exhibited a low average sheet resistance of 305.3 Omega/sq with a uniformity of 3.85%. The fabricated large periphery device with a dimension of 0.35 pm x 2 nun demonstrated high performance, with a maximum DC current density of 1360 mA/mm, a transconductance of 460 mS/mm, a breakdown voltage larger than 80 V, a current gain cut-off frequency of 24 GHz and a maximum oscillation frequency of 34 GHz. Under the condition of continuous-wave (CW) at 9 GHz, the device achieved 18.1 W output power with a power density of 9.05 W/mm and power-added-efficiency (PAE) of 36.4%. While the corresponding results of pulse condition at 8 GHz are 22.4 W output power with 11.2 W/mm power density and 45.3% PAE. These are the state-of-the-art power performance ever reported for this physical dimension of GaN HEMTs based on SiC substrate at 8 GHz. (c) 2008 Elsevier Ltd. All rights reserved.

Mechanism of enhancing output power of plasmonic very-small-aperture lasers

Light transmission through a single subwavelength slit surrounded by periodic grooves in layered films consisting of Au and dielectric material is analyzed by the finite difference time domain method in two dimensions. The results show that the transmission field can be enhanced by the corrugations on the output plane, which is a supplementary explanation for the extraordinary optical transmission.

Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale

Sapphire substrates were patterned by a chemical wet etching technique in the micro- and nanoscale to enhance the light output power of InGaN/GaN light-emitting diodes (LEDs). InGaN/GaN LEDs on a pyramidal patterned sapphire substrate in the microscale (MPSS) and pyramidal patterned sapphire substrate in the nanoscale (NPSS) were grown by metalorganic chemical vapor deposition. The characteristics of the LEDs fabricated on the MPSS and NPSS prepared by wet etching were studied and the light output powers of the LEDs fabricated on the MPSS and NPSS increased compared with that of the conventional LEDs fabricated on planar sapphire substrates. In comparison with the planar sapphire substrate, an enhancement in output power of about 29% and 48% is achieved with the MPSS and NPSS at an injection current of 20 mA, respectively. This significant enhancement is attributable to the improvement of the epitaxial quality of GaN-based epilayers and the improvement of the light extraction efficiency by patterned sapphire substrates. Additionally, the NPSS is more effective to enhance the light output power than the MPSS. (c) 2008 American Institute of Physics.

1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz

AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with high mobility GaN channel layer were grown on 50 min diameter semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition and large periphery HEMT devices were fabricated and characterized. High two-dimensional electron gas mobility of 2215 cm(2)/V s at room temperature with sheet electron concentration of 1.044 x 10(13)/cm(2) was achieved. The 50 mm diameter HEMT wafer exhibited a low average sheet resistance of 251.0 Omega/square, with the resistance uniformity of 2.02%. Atomic force microscopy measurements revealed a smooth AlGaN surface with a root-mean-square roughness of 0.27 nm for a scan area of 5 mu mi x 5 pm. The 1-mm gate width devices fabricated using the materials demonstrated a very high continuous wave output power of 9.39 W at 8 GHz, with a power added efficiency of 46.2% and power gain of 7.54 dB. A maximum drain current density of 1300 mA/mm, an extrinsic transconductance of 382 mS/mm, a current gain cutoff frequency of 31 GHz and a maximum frequency of oscillation 60 GHz were also achieved in the same devices. (C) 2007 Elsevier Ltd. All rights reserved.

Comparative cytogenetics of bats (Chiroptera): The prevalence of Robertsonian translocations limits the power of chromosomal characters in resolving interfamily phylogenetic relationships

Although the monophyly of Chiroptera is well supported by many independent studies, higher-level systematics, e.g. the monophyly of microbats, remains disputed by morphological and molecular studies. Chromosomal rearrangements, as one type of rare genomic changes, have become increasingly popular in phylogenetic studies as alternatives to molecular and other morphological characters. Here, the representatives of families Megadermatidae and Emballonuridae are studied by comparative chromosome painting for the first time. The results have been integrated into published comparative maps, providing an opportunity to assess genome-wide chromosomal homologies between the representatives of eight bat families. Our results further substantiate the wide occurrence of Robertsonian translocations in bats, with the possible involvement of whole-arm reciprocal translocations (WARTs). In order to search for valid cytogenetic signature(s) for each family and superfamily, evolutionary chromosomal rearrangements identified by chromosomal painting and/or banding comparison are subjected to two independent analyses: (1) a cladistic analysis using parsimony and (2) the mapping of these chromosomal changes onto the molecularly defined phylogenetic tree available fromthe literature. Both analyses clearly indicate the prevalence of homoplasic events that reduce the reliability of chromosomal characters for resolving interfamily relationships in bats.

Upconversion luminescence and optical power limiting effect based on two- and three-photon absorption processes of ZnO crystal

Near-infrared to UV and visible upconversion luminescence was observed in single-crystalline ZnO under an 800 nm infrared femtosecond laser irradiation. The optical properties of the crystal reveal that the UV and VIS emission band are due to the exciton transition (D0X) bound to neutral donors and the deep luminescent centers in ZnO, respectively. The relationship between the upconversion luminescence intensity and the pump power of the femtosecond laser reveals that the UV emission belongs to three-photon sequential band-to-band excitation and the VIS emission belongs to two-photon simultaneous defect-absorption induced luminescence. A saturation phenomenon and polarization-dependent effect are also observed in the upconversion process of ZnO. A very good optical power limiting performance at 800 nm has been demonstrated. The two- and three-photon absorption coefficients of ZnO crystal were measured to be 0.2018 cm GW(-1) and 7.102 x 10(-3) cm(3) GW(-2), respectively. The two- and three-photon cross sections were calculated to be 1.189 x 10(-51) cm(4) s and 1.040 x 10(-80) cm(6) s(2), respectively. (c) 2007 Elsevier B.V. All rights reserved.

Nd : YAG ceramic laser obtained high slope-efficiency of 62% in high power applications

By using quite uniformly nine-stacks side-around arranged compact pumping system, a high power Nd:YAG ceramic quasi-CW laser with high slope efficiency of 62% has been demonstrated. With 450 W quasi-CW stacked laser diode bars pumping at 808 nm, performance of the Nd: YAG ceramic laser with different output coupling mirrors has been investigated. Optimum output power of 236 W at 1064 nm was obtained and corresponding optical-to-optical conversion efficiency was as high as 52.5%. The laser system operated quite stably and no saturation phenomena have been observed, which means higher output laser power could be obtained if injecting higher pumping power. The still-evolving Nd: YAG ceramics are potential super excellent media for high power practical laser applications. (c) 2005 Optical Society of America.

High power single transverse mode operation of a tapered large-mode-area fiber laser

To get high output power with good beam quality, a tapered section is introduced to large-mode-area (LMA) Yb-doped fiber laser. Output characteristics of the fiber laser without tapered section and with tapered section are compared experimentally. When the launched pump power is 119.1 W, 77.9 W with M-2 3.08 and 56.4 W with M-2 1.14 can be obtained, respectively. The corresponding slope efficiencies are 71.8% and 54.1%, respectively. Although output power of the tapered fiber laser has 30.6% penalty, brightness of it is as much as 5.28 times of the fiber laser without tapered section. Moreover, spectra of them are measured. It is found that tapered section makes lasing wavelength of the fiber laser shorter. (c) 2007 Elsevier B.V. All rights reserved.

7.3 W of single-frequency output power at 2.09 μm from an Ho:YAG monolithic nonplanar ring laser

Single-frequency output power of 7.3 W at 2.09 mu m from a monolithic Ho:YAG nonplanar ring oscillator (NPRO) is demonstrated. Resonantly pumped by a Tm-doped fiber laser at 1.91 mu m, the Ho:YAG NPRO produces 71% of slope efficiency with respect to absorbed pump power and nearly diffraction-limited output with a beam quality parameter of M-2 approximate to 1.1. (c) 2008 Optical Society of America

Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure

InGaN/GaN multi-quantum-well-structure laser diodes with an array structure are successfully fabricated on sapphire substrates. The laser diode consists of four emitter stripes which share common electrodes on one laser chip. An 800-mu m-long cavity is formed by cleaving the substrate along the < 1 (1) over bar 00 >. orientation using laser scriber. The threshold current and voltage of the laser array diode are 2A and 10.5 V, respectively. A light output peak power of 12W under pulsed current injection at room temperature is achieved. We simulate the electric properties of GaN based laser diode in a co-planar structure and the results show that minimizing the difference of distances between the different ridges and the n-electrode and increasing the electrical conductivity of the n-type GaN are two effective ways to improve the uniformity of carrier distribution in emitter stripes. Two pairs of emitters on a chip are arranged to be located near the two n-electrode pads on the left and right sides, and the four stripe emitters can laser together. The laser diode shows two sharp peaks of light output at 408 and 409 nm above the threshold current. The full widths at half maximum for the parallel and perpendicular far field patterns are 8 degrees and 32 degrees, respectively.

IMPROVED PEAK POWER METHOD FOR MEASURING FREQUENCY RESPONSES OF PHOTODETECTORS IN A SELF-HETERODYNE SYSTEM

An improved peak power method for measuring frequency responses of photodetectors in a self-heterodyne system consisting of a distributed Bragg reflector laser is proposed. The time-resolved spectrum technique is used to measure the peak power of the beat signal and the intrinsic linewidth of heat signal for calibration. The experimental results show that the impact of the thermal-induced frequency drift, which is the main reason for producing an error in measurement by conventional peak power method and spectrum power method, can be removed.

A new way of uniform splitting of the optical power by directional coupling between the photonic crystal waveguides

Directional coupler can be constructed by putting multiple photonic crystal waveguides together. The propagation of the optical field entering this system symmetrically was analysed numerically according to self-imaging principle. On the basis of this structure, ultracompact multiway beam splitter was designed and the ones with three and four output channels were discussed in details as examples. By simply tuning the effective refractive index of two dielectric rods in the coupler symmetrically to induce the redistribution of the power of the optical field, uniform or free splitting can be achieved. Compared with the reported results, this way is simpler, more feasible and more efficient and has extensive practical value in future photonic integrated circuits.

Fabrication and analysis of 2x2 thermo-optic SOI waveguide switch with low power consumption and fast response by anisotropy chemical etching

A low power consumption 2 x 2 thermo-optic switch with fast response was fabricated on silicon-on-insulator by anisotropy chemical etching. Blocking trenches were etched on both sides of the phase-shifting arms to shorten device length and reduce power consumption. Thin top cladding layer was grown to reduce power consumption and switching time. The device showed good characteristics, including a low switching power of 145 mW and a fast switching speed of 8 +/- 1 mus, respectively. Two-dimensional finite element method was applied to simulate temperature field in the phase-shifting arm instead of conventional one-dimensional method. According to the simulated result, a new two-dimensional index distribution of phase-shifting arm was determined. Consequently finite-difference beam propagation method was employed to simulate the light propagation in the switch, and calculate the power consumption as well as the switching speed. The experimental results were in good agreement with the theoretical estimations. (C) 2004 Elsevier B.V. All rights reserved.

Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power

Quasi-continuous-wave operation of GaAs/AlGaAs quantum-cascade lasers with high average optical power is demonstrated. Double X-ray diffraction has been used to investigate the quality of the epitaxial material. The compositional gradients and the interface quality are controlled effectively. The corrected average power of per facet about 17 mW and temperature tuning coefficient of the gain peak about 0.91 nm/K from 83 K to 140 K is achieved in pulse operation. Best value of threshold current density is less than 3.0 kA/cm(2) at 83 K. (C) 2005 Elsevier Ltd. All rights reserved.