8 resultados para post process

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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By optimizing the molecule beam epitaxy growth condition, the quality of quantum cascade (QC) material has greatly been improved. The spectrum of double x-ray diffraction indicates that the interface between the constituent layers is very smooth, the lattice mismatch between the epilayer and the substrate is less than 0.1%, and the periodicity fluctuation of the active region is not more than 4.2%. The QC laser with the emission wavelength of about 5.1 mum is operated at the threshold of 0.73 kA/cm(2) at liquid nitrogen temperature with the repetition rate of 10kHz and at a duty cycle of 1%. Meanwhile, the performance of the laser can be improved with suitable post process techniques such as the metallic ohmic contact technology.

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Post-microbuckling is a fundamental feature of compressive failure process for the unidirectional-fiber-reinforced composites and laminated composites. The post-microbuckling behavior of composites under compression in the light of the Kevlar49-reinforced 648/BF3.400 (brittle epoxy) and EP (flexible epoxy) is studied, theoretically and experimentally. Analytical results of compressive strength are in good agreement with experimental results, qualitatively and quantitatively. By the experimental research, the post-microbuckling feature of the advancing kink band model is clearly displayed.

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EXPERIMENTS carried out using a split Hopkinson torsional bar have shown that only one shear band develops in specimens of hot rolled steel which break during testing. We observed, however, that in specimens which were not deformed to failure, several fine shear bands appeared. We believe that these formed during the loading cycle before the appearance of the final shear band and were not due to the effect of unloading. So we developed a numerical model to study the evolution of shear banding from several finite amplitude disturbances (FADs) in both temperature and strain rate. This numerical model reveals the detailed processes by which the FADs evolve into a fully developed shear band and suggests that beyond instability, the so-called shear banding process consists of two stages: inhomogeneous shearing and true shear-banding. The latter is characterized by the collapse of the stress and an abrupt increase of the local shear strain rate.

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Rapid thermal annealing (RTA) has been demonstrated as an important way to improve the crystal quality of GaInNAs(Sb)/GaAs quantum wells. However little investigation has been made into their application in laser growth, especially at a wavelength of 1.55 mu m. When a GaAs-based laser is grown, AlGaAs is usually used for cladding layers. The growth of the p-cladding layer usually takes 30-45 min at a growth temperature higher than that of the GaInNAs(Sb) active region, which affects the material quality. To investigate this effect, various post-growth annealing processes were performed to simulate this process. Great enhancement of the PL intensity was obtained by a two-step process which consisted of annealing first at 700 degrees C for 60 s and then at 600 degrees C for 45 min. We transferred this post-growth annealing to in situ annealing. Finally, a GaInNAsSb laser was grown with a 700 degrees C in situ annealing process. Continuous operation at room temperature of a GaAs-based dilute nitride laser with a wavelength beyond 1.55 mu m was realized for the first time.

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Oxidizing thick porous silicon layer into silicon dioxide is a timesaving and low-cost process for producing thick silicon dioxide layer used in silicon-based optical waveguide devices. The solution of H2O2 is proposed to post-treat thick porous silicon (PS) films. The prepared PS layer as the cathode is applied about 10 mA/cm(2) current in mixture of ethanol, HF, and H2O2 solutions, in order to improve the stability and the smoothness of the surface. With the low-temperature dry-O-2 pre-oxidizations and high-temperature wet O-2 oxidizations process, a high-quality SiO2 30 mu m thickness layer that fit for the optical waveguide device was prepared. The SEM images show significant improved smoothness on the surface of oxidized PS thick films, the SiO2 film has a stable and uniformity reflex index that measured by the prism coupler, the uniformity of the reflex index in different place of the wafer is about 0.0003.

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Plant cell cultures have been suggested as a feasible technology for the production of a myriad of plant-derived metabolites. However, commercial application of plant cell culture has met limited success with only a handful of metabolites produced at the pilot- and commercial-scales. To improve the production of secondary metabolites in plant cell cultures, efforts have been devoted predominantly to the optimization of biosynthetic pathways by both process and genetic engineering approaches. Given that secondary metabolism includes-the synthesis. metabolism and catabolism of endogenous compounds by the specialized proteins, this review intends to draw attention to the manipulation and optimization of post-biosynthetic events that follow the formation of core metabolite structures in biosynthetic pathways. These post-biosynthetic events-the chemical and enzymatic modifications, transport, storage/secretion and catabolism/degradation have been largely unexplored in the past. Potential areas are identified where further research is needed to answer fundamental questions that have implications for advanced bioprocess design. Anthocyanin production by plant cell cultures is used as a case study for this discussion, as it presents a good example of compounds for which there are extensive research publications but still no commercial bioprocess. It is perceived that research on post-biosynthetic processes may lead to future opportunities for significant advances in commercial plant cell cultures. (C) 2002 Elsevier Science Inc. All rights reserved.

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Based on the latest seismic and geological data, tectonic subsidence of three seismic lines in the deepwater area of Pearl River Mouth Basin (PRMB), the northern South China Sea (SCS), is calculated. The result shows that the rifting process of study area is different from the typical passive continental margin basin. Although the seafloor spreading of SCS initiated at 32 Ma, the tectonic subsidence rate does not decrease but increases instead, and then decreases at about 23 Ma, which indicates that the rifting continued after the onset of seafloor spreading until about 23 Ma. The formation thickness exhibits the same phenomenon, that is the syn-rift stage prolonged and the post-rift thermal subsidence delayed. The formation mechanisms are supposed to be three: (1) the lithospheric rigidity of the northern SCS is weak and its ductility is relatively strong, which delayed the strain relaxation resulting from the seafloor spreading; (2) the differential layered independent extension of the lithosphere may be one reason for the delay of post-rift stage; and (3) the southward transition of SCS spreading ridge during 24 to 21 Ma and the corresponding acceleration of seafloor spreading rate then triggered the initiation of large-scale thermal subsidence in the study area at about 23 Ma.

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A new post-grafting process, consisting of two steps of substrate preparation and sol - gel post-grafting, has been developed to prepare titanium-doped mesoporous SBA-15 material with a double-layered structure and locally concentrated titanium content at the inner pore surface. With this novel technique, the single phased and originally ordered mesostructures can be well conserved; in the conventional direct synthesis they can be partially damaged when the frameworks are doped with high content heteroatoms. Titanium species exist in an isolated, tetrahedral structure and are localized at the pore surface; this is beneficial to both reactant access and product release. Characterization with XRD, N-2 adsorption/desorption isotherms, HREM/ EDS, ICP, UV - Vis, and the newly developed UV - Raman spectroscopy confirm these results. Preliminary catalytic tests with the selective epoxidation of cyclohexene show good catalytic activity. Among them, sample TiSBA-15-10 with a Si : Ti molar ratio of 10 shows a TON value of 75 and a highest product ( epoxide) yield of 55%.