9 resultados para poor relief
em Chinese Academy of Sciences Institutional Repositories Grid Portal
Resumo:
We demonstrate that the surface relief guided-mode resonant gratings with specified central wavelength and FWHM in the visible wavelength range can be designed by analyzing the complex poles of Reflectance and transmission coefficient matrix algorithm (RTCM), a variant of S-matrix propagation algorithm proposed for calculation of multilayer gratings. In addition, FWHM is computed with couple-mode (CM) theory of resonant gratings which is firstly extended by Norton et al. in calculation of waveguide grating. Furthermore, the side band reflections of the filter can be reduced to less than 5% in the visible wavelength with the antireflection (AR) design technique widely used in the thin-film field. (C) 2008 Elsevier B.V. All rights reserved.
Resumo:
In this paper, a new type of resonant Brewster filters (RBF) with surface relief structure for the multiple channels is first presented by using the rigorous coupled-wave analysis and the S-matrix method. By tuning the depth of homogeneous layer which is under the surface relief structure, the multiple channels phenomenon is obtained. Long range, extremely low sidebands and multiple channels are found when the RBF with surface relief structure is illuminated with Transverse Magnetic incident polarization light near the Brewster angle calculated with the effective media theory of sub wavelength grating. Moreover, the wavelengths of RBF with surface relief structure can be easily shifted by changing the depth of homogeneous layer while its optical properties such as low sideband reflection and narrow band are not spoiled when the depth is changed. Furthermore, the variation of the grating thickness does not effectively change the resonant wavelength of RBF, but have a remarkable effect on its line width, which is very useful for designing such filters with different line widths at desired wavelength.
Resumo:
Crack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants c and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interlayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In-doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Resumo:
Cubic boron nitride (c-BN) films were prepared by ion beam assisted deposition (IBAD) technique, and the stresses were primary estimated by measuring the frequency shifts in the infrared-absorption peaks of c-BN samples. To test the possible effects of other factors, dependencies of the c-BN transversal optical mode position on film thickness and c-BN content were investigated. Several methods for reducing the stress of c-BN films including annealing, high temperature deposition, two-stage process, and the addition of a small amount of Si were studied, in which the c-BN films with similar thickness and cubic phase content were used to evaluate the effects of the various stress relief methods. It was shown that all the methods can reduce the stress in c-BN films to various extents. Especially, the incorporation of a small amount of Si (2.3 at.%) can result in a remarkable stress relief from 8.4 to similar to 3.6 GPa whereas the c-BN content is nearly unaffected, although a slight degradation of the c-BN crystallinity is observed. The stress can be further reduced down below I GPa by combination of the addition of Si with the two-stage deposition process. (c) 2008 Elsevier B.V. All rights reserved.
Resumo:
We investigated AlGaN layers grown by metalorganic chemical vapor deposition (MOCVD) on high temperature (HT-)GaN and AlGaN buffer layers. On GaN buffer layer, there are a lot of surface cracking because of tensile strain in subsequent AlGaN epilayers. On HT-AlGaN buffer layer, not only cracks but also high densities rounded pits present, which is related to the high density of coalescence boundaries in HT-AlGaN growth process.The insertion of interlayer (IL) between AlGaN and the GaN pseudosubstrate can not only avoid cracking by modifying the strain status of the epilayer structure, but also improved Al incorporation efficiency and lead to phase-separation. And we also found the growth temperature of IL is a critical parameter for crystalline quality of subsequent AlGaN epilayer. Low temperature (LT-) A1N IL lead to a inferior quality in subsequent AlGaN epilayers.
Resumo:
Land-use change is an important aspect of global environment change. It is, in a sense, the direct result of human activities influencing our physical environment. Supported by the dynamic serving system of national resources, including both the environment database and GIS technology, this paper analyzed the land-use change in northeastern China in the past ten years (1990 - 2000). It divides northeastern China into five land-use zones based on the dynamic degree (DD) of land-use: woodland/grassland - arable land conversion zone, dry land - paddy field conversion zone, urban expansion zone, interlocked zone of farming and pasturing, and reclamation and abandoned zone. In the past ten years, land-use change of northeastern China can be generalized as follows: increase of cropland area was obvious, paddy field and dry land increased by 74. 9 and 276. 0 thousand ha respectively; urban area expanded rapidly, area of town and rural residence increased by 76. 8 thousand ha; area of forest and grassland decreased sharply with the amount of 1399. 0 and 1521. 3 thousand ha respectively; area of water body and unused land increased by 148. 4 and 513. 9 thousand ha respectively. Besides a comprehensive analysis of the spatial patterns of land use, this paper also discusses the driving forces in each land-use dynamic zones. The study shows that some key biophysical factors affect conspicuously the conversion of different land- use types. In this paper, the relationships between land- use conversion and DEM, accnmlated temperature(>= 10 degrees C) and precipitation were analysed and represented. We conclude that the land- use changes in northeast China resulted from the change of macro social and economic factors and local physical elements. Rapid population growth and management changes, in some sense, can explain the shaping of woodland/grassland - cropland conversion zone. The conversion from dry land to paddy field in the dry land - paddy field conversion zone, apart from the physical elements change promoting the expansion of paddy field, results from two reasons: one is that the implementation of market-economy in China has given farmers the right to decide what they plant and how they plant their crops, the other factor is originated partially from the change of dietary habit with the social and economic development. The conversion from paddy field to dry land is caused primarily by the shortfall of irrigation water, which in turn is caused by poor water allocation managed by local governments. The shaping of the reclamation and abandoned zone is partially due to the lack of environment protection consciousness among pioneer settlers. The reason for the conversion from grassland to cropland is the relatively higher profits of fanning than that of pasturing in the interlocked zone of farming and pasturing. In northeastern China, the rapid expansion of built-up areas results from two factors: the first is its small number of towns; the second comes from the huge potential for expansion of existing towns and cities. It is noticeable that urban expansion in the northeastern China is characterized by gentle topographic relief and low population density. Physiognomy, transportation and economy exert great influences on the urban expansion.
Resumo:
In this Letter, crystal growth of a symmetric crystalline-amorphous diblock copolymer, poly(styrene-b-epsilon-caprolactone) (PS-b-PCL), in thin films was investigated by atomic force microscopy (AFM), Relief structures of holes and islands were formed during annealing the film at the molten state, and the in situ observation of subsequent crystal growth at room temperature indicated that the crystals were preferred to occur at the edge of holes or islands and grew into the interior area. It was concluded that the stretched PCL blocks at the edge of relief structures, caused by material transportation or deformation of the interface, could act as nucleation agents during polymer crystallization. The crystal growth rate of individual lamellae varied both from lamellae to lamellae and in time, but the area occupied by crystals increased constantly with time. At 22 degreesC, the growth rate was 1.2 x 10(-2) mum(2)/min with the scan size 2 x 2 mum(2).