Supported phospholipid membranes: Comparison among different deposition methods for a phospholipid monolayer

Supported lipid membranes consisting of self-assembled alkanethiol and lipid monolayers on gold substrates could be produced by three different deposition methods: the Langmuir-Blodgett (L-B) technique, the painted method, and the paint-freeze method, By using cyclic voltammetry, chronoamperometry/chronocoulometry and a.c. impedance measurements, we demonstrated that lipid membranes prepared by these three deposition methods had obvious differences in specific capacitance, resistance and thickness. The specific capacitance of lipid membranes prepared by depositing an L-B monolayer on the alkanethiol alkylated surfaces was 0.53 mu Fcm(-2), 0.44 mu Fcm(-2) by the painted method and 0.68 mu Fcm(-2) by the paint-freeze method. The specific conductivity of lipid membranes prepared by the L-B method was over three times lower than that of the painted lipid membranes, while that of the paint-freeze method was the lowest. The difference among the three types of lipid membranes was ascribed to the influence of the organic solvent in lipid films and the changes in density of the films. The lipid membranes prepared by the usual painted method contained a trace amount of the organic solvent. The organic solvent existing in the hydrocarbon core of the membrane reduced the density of the membrane and increased the thickness of the membrane. The membrane prepared by depositing an L-B monolayer containing no solvent had higher density and the lowest fluidity, and the thickness of the membrane was smaller. The lipid membrane prepared by the paint-freeze method changed its structure sharply at the lower temperature. The organic solvent was frozen out of the membrane while the density of the membrane increased greatly. All these caused the membrane to exist in a ''tilted'' state and the thickness of this membrane was the smallest. The lipid membrane produced by the paint-freeze method was a membrane not containing organic solvent. This method was easier in manipulation and had better reproducibility than that of the usual painting method and the method of forming free-standing lipid film. The solvent-free membrane had a long lifetime and a higher mechanical stability. This model membrane would be useful in many areas of scientific research.

Lanthanide ion induced formation of stripes domain structure in phospholipid Langmuir-Blodgett monolayer film observed by atomic force microscopy

Long-range ordered stripes domain structures were observed in Dipalmitoylphosphatidylcholine (DPPC) Langmuir-Blodgett monolayer film which was spread on the subphase of lanthanide ion (Eu3+) solution and transferred to a freshly cleaved mica substrate by vertical deposition. This novel phenomenon was discussed in terms of the competitive interaction of dipole-dipole and electrostatic interactions of the DPPC molecules combined with lanthanide ions with those DPPC molecules free of lanthanide ions.

Self-assembled monolayer growth of phospholipids on hydrophobic surface toward mimetic biomembranes: Scanning probe microscopy study

Atomic force microscopy (AFM) and lateral force microscopy (LFM) were used simultaneously to analyze a model membrane bilayer structure consisting of a phospholipid outer monolayer deposited onto organosilane-derivatized mica surfaces, which were constructed by using painting and self-assembly methods. The phospholipid used as outer monolayer was dimyristoylphosphatidylcholine (DMPC). The hydrocarbon-covered substrate that formed the inner half bilayer was composed of a self-assembly monolayer (SAM) of octadecyltrichloroorganosilane (OTS) on mica. SAMs of DMPC were formed by exposing hydrophobic mica to a solution of DMPC in decane/isobutanol and subsequently immersing into pure water. AFM images of samples immersed in solution for varying exposure times showed that before forming a complete monolayer the molecules aggregated into dense islands (2.2-2.6 nm high) on the surface. The islands had a compact and rounded morphology. LFM, coupled with topographic data obtained with the atomic force mode, had made possible the distinction between DMPC and OTS. The rate constant of DMPC growth was calculated. This is the first systematic study of the SAM formation of DMPC by AFM and LFM imaging. It reveals more direct information about the film morphology than previous studies with conventional surface analytical techniques such as infrared spectroscopy, X-ray, or fluorescence microscopy.

K+ sensors based on supported alkanethiol/phospholipid bilayers

A novel kind of K+ sensor with valinomycin-incorporated bilayers supported on a gold electrode consisting of self-assembled alkanethiol monolayers (SAMs) and a lipid monolayer has been fabricated successfully. The lipid monolayer is deposited on the alkylated surface of the first alkanethiol monolayer through three different methods, such as the Langmuir-Blodgett (LB) technique, painted method and painted-frozen method. The response of K + sensors produced by a painted or painted-frozen lipid monolayer on an alkanethiol alkylated gold electrode is larger than that by the LB method, which is due to the difference in fluidity of the three kinds of bilayers. Selectivity coefficients KK+, Na+, KK+, Li+, KK+, Ca2+ and KK+, Mg2+ are 10(-4), 10(-4), 2 x 10(-5) and 3 x 10(-5) respectively, and there is no obvious difference among different fabricating methods. A linear response toward the potassium ion was found in the range from 10(-1) M to 10(-5) M with the detection limit of 10(-6) M. The sensor has a slope of 60 mV per decade. Meanwhile, the longevity of the sensor was improved obviously for at least two months at about -10 degrees C. The higher stability shows the possibility to fabricate a practical biosensor.

The ion selectivity of monensin incorporated phospholipid/alkanethiol bilayers

Monensin was incorporated into phospholipid/alkanethiol bilayers on the gold electrode surface by a new, paint-freeze method to deposit a lipid monolayer on the self-assembled monolayers (SAMs) of alkanethiol. The advantages of this assembly system with a suitable function for investigating the ion selective transfer across the mimetic biomembrane are based on the characteristics of SAMs of alkanethiols and monensin. On the one hand, the SAMs of alkanethiols bring out their efficiency of packing and coverage of the metal substrate and relatively long-term stability; on the other hand, monensin improves the ion selectivity noticeably. The selectivity coefficients K-Na+,K-K+, K-Na+,K-Rb+ and K-Na+,K-Ag+ are 6 x 10(-2), 7.2 x 10(-3) and 30 respectively. However, the selectivity coefficient K-Na+,K-Li+ could not be obtained by a potentiometric method due to the specific interaction between Li+ and phospholipid and the lower degree of complexion between Li+ and monensin. The potential response of this bilayer system to monovalent ions is fairly good. For example, the slope of the response to Na+ is close to 60 mV per decade and its linearity range is from 10(-1) to 10(-5) M with a detection limit of 2 x 10(-6) M, The bilayer is stable for at least two months without changing its properties. This monensin incorporated lipid/alkanethiol bilayer is a good mimetic biomembrane system, which provides great promise for investigating the ion transfer mechanism across the biomembrane and developing a practical biosensor.

Preparation And Tribology Studies of Alkyl Carboxylic Acid Monolayer Films on Pei-Coated Glass Substrate

首次在涂敷PEI的玻璃表面上制备了癸酸及全氟癸酸的单分子层膜。研究了成膜机理及摩擦特性。结果表明。脱水剂DCCD促进了癸酸或全氟癸酸与PEI酞胺化的反应。导致两种羧酸在PEI表面产生了靠化学键（酞胺键）连接的稳定的单分子层膜,摩擦、磨损实验表明。单分子层有机膜的摩擦特性受膜的组成、表面能及有序性和堆积密度的重要影响。表面能越低,有序性和堆积密度越高。摩擦系数越低。与碳氢化合物相比。碳氟化合物形成的有序膜具有更高的强度和抗磨性能。

Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix

Electron-spin dynamics in InAs/GaAs heterostructures consisting of a single layer of InAs (1/3-1 monolayer) embedded in (001) and (311)A GaAs matrix was studied by means of time-resolved Kerr rotation spectroscopy. The spin-relaxation time of the submonolayer InAs samples is significantly enhanced, compared with that of the monolayer InAs sample. The electron-spin-relaxation time and the effective g factor in submonolayer samples were found to be strongly dependent on the photogenerated carrier density. The contribution from both the D'yakonov-Perel' mechanism and Bir-Aronov-Pikus mechanism are discussed to interpret the temperature dependence of spin decoherence at various carrier densities.

Hole Spin Relaxation in an Ultrathin InAs Monolayer

We investigate the spin relaxation time of holes in an ultrathin neutral InAs monolayer (1.5 ML) and compare with that of electrons, using polarization-dependent time-resolved photoluminescence (TRPL) experiments. With excitation energies above the GaAs gap, we observe a rather slow relaxation of holes (tau(1h) = 196 +/- 17 ps) that is in the magnitude similar to electrons (tau(1e) = 354 +/- 32 ps) in this ultrathin sample. The results are in good agreement with earlier theoretical prediction, and the phonon scattering due to spin-orbit coupling is realized to play a dominant role in the carrier spin kinetics.

Time-resolved photoluminescence of sub-monolayer InGaAs/GaAs quantum-dot-quantum-well heterostructures

Time-resolved photoluminescence (PL) of sub-monolayer (SML) InGaAs/GaAs quantum-dot-quantum-well heterostructures was measured at 5 K for the first time. The radiative lifetime of SML quantum dots (QDs) increases from 500 ps to 800 ps with the increase of the size of QDs, which is related to the small confinement energy of the excitons inside SML QDs and the exciton transfer from smaller QDs to larger ones through tunneling. The rise time of quantum-dot state PL signal strongly depends on the excitation power density. At low excitation power density, the rise time is about 35 ps, the mechanism of carrier capture is dominated by the emission of longitudinal-optical phonons. At high excitation power density, the rise time decreases as the excitation density increases, and Auger process plays an important role in the carrier capture. These results are very useful for understanding the working properties of sub-monolayer quantum-dot devices.

Spin relaxation dynamics in InAs monolayer and submonolayer

By using time-resolved photoluminescence and time-resolved Kerr rotation, we have studied the unique electron spin dynamics in InAs monolayer (ML) and submonolayer (SML), which were sandwiched in GaAs matrix. Under non-resonant excitation, the spin relaxation lifetimes of 3.4 ns and 0.48 ns were observed for 1/3 ML and I ML InAs samples, respectively. More interestingly, the spin lifetime of the 1/3 ML InAs decreased dramatically under resonant excitation, down to 70 ps, while the spin lifetime of the 1 ML sample did not vary much, changing only from 400 to 340 ps. These interesting results come from the different electron-hole interactions caused by different spatial electron-hole correlation, and they provide a direct evidence of the dominant spin relaxation process, i.e. the BAP mechanism. Furthermore, these new results may provide a valuable enlightenment in controlling the spin relaxation and in seeking new material systems for spintronics application.

Structure and photoluminescence study of InGaAs/GaAs quantum dots grown via cycled (InAs)(n)/(GaAs)(n) monolayer deposition

We report the morphology of an InGaAs nanostructure grown by molecular beam epitaxy via cycled (InAs)(n)/(GaAs)(n) monolayer deposition. Atomic force microscopy images clearly show that varying monolayer deposition per cycle has significant influence on the size, density and shape of the InGaAs nanostructure. Low-temperature photoluminescence spectra show the effect of n on the optical quality, and 1.35mum photoluminescence with a linewidth of only 19.2meV at room temperature has been achieved in the (InAs)(1)/(GaAs)(1) structure.

1.35 mu m photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)(1)/(GaAs)(1) monolayer deposition

1.35 mum photoluminescence (PL) with a narrow linewidth of only 19.2 meV at room temperature has been achieved in In0.5Ga0.5As islands structure grown on GaAs (1 0 0) substrate by solid-source molecular beam epitaxy. Atomic force microscopy (AFM) measurement reveals that the 16-ML-thick In0.5Ga0.5As islands show quite uniform InGaAs mounds morphology along the [ 1(1) over bar 0] direction with a periodicity of about 90 nm in the [1 1 0] direction. Compared with the In0.5Ga0.5As alloy quantum well (QW) of the same width, the In0.5Ga0.5As islands structure always shows a lower PL peak energy and narrower full-width at half-maximum (FWHM), also a stronger PL intensity at low excitation power and more efficient confinement of the carriers. Our results provide important information for optimizing the epitaxial structures of 1.3 mum wavelength quantum dots devices. (C) 2000 Elsevier Science B.V. All rights reserved.