A Method Based on Digital Image Analysis for Measuring the Strain Field of Deformed Sheet

对薄板成形应变场传统的测量方法进行了研究,指出了其不足和误差的来源,提出了数字图像分析法测量薄板成形中的应变场,对测量原理、新的测量方法对传统方法的改进,以及如何降低误差进行了介绍,指出数字图像分析法的前景,提出了改进意见。

Effect of Cold Rolling Ratio and Heating Rate of Batch Annealing on Textures of Micro-Carbon Steel Sheet

在四辊冷轧试验机和Gleeble-1500试验机上进行了热轧微碳钢板的冷轧和退火试验。用D/max-RC衍射仪测量了试样的,/”层织构,并用Roe软件进行了ODF分析。研究表明,所研究的热轧微碳深冲板压下率约为75%,退火升温速度为20-40℃/h时,试样为{111}织构特征；压下率较大(80%)时,退火织构为较弱的{111}组分。无论{111}织构还是非{111}织构都是在形核阶段开始形成,在晶粒长大优先长大,受到定向形核和选择生长双重机制的作用。

Large strain field near a crack tip in a rubber sheet

The distribution of stress-strain near a crack tip in a rubber sheet is investigated by employing the constitutive relation given by Gao (1997). It is shown that the crack tip field is composed of two shrinking sectors and one expanding sector. The stress state near the crack tip is in uniaxial tension. The analytical solutions are obtained for both expanding and shrinking sectors.

A Novel Counter Sheet-Flow Sandwich Cell Culture Device For Mammalian Cell Growth In Space

Cell culture and growth in space is crucial to understand the cellular responses under microgravity. The effects of microgravity were coupled with such environment restrictions as medium perfusion, in which the underlying mechanism has been poorly understood. In the present work, a customer-made counter sheet-flow sandwich cell culture device was developed upon a biomechanical concept from fish gill breathing. The sandwich culture unit consists of two side chambers where the medium flow is counter-directional, a central chamber where the cells are cultured, and two porous polycarbonate membranes between side and central chambers. Flow dynamics analysis revealed the symmetrical velocity profile and uniform low shear rate distribution of flowing medium inside the central culture chamber, which promotes sufficient mass transport and nutrient supply for mammalian cell growth. An on-orbit experiment performed on a recovery satellite was used to validate the availability of the device.

Centrifuge modeling of suction bucket foundations for platforms under ice-sheet-induced cyclic lateral loadings

This paper presents the results of a series of centrifuge model tests performed to study the behavior of suction bucket foundations for a tension leg platform in the Bohai Bay, China. The target lateral loadings were from ice-sheet-induced structural vibrations at a frequency of 0.8-1.0 Hz. The results indicate that excess pore water pressures reach the highest values within a depth of 1.0-1.5 in below the mud line. The pore pressures and the induced settlement and lateral displacement increase with the amplitude of the cyclic loading. Two failure modes were observed: liquefaction in early excitations and settlement-induced problems after long-term excitations. (c) 2006 Elsevier Ltd. All rights reserved.

The plastic instability behaviour of laser-textured steel sheet

As the production of a new technique that can offer both good formability and high image clarity for texturing metal sheet, laser-textured sheet has attracted the attention of many manufacturers and users. Among the many subjects to be studied, plastic instability behaviour of the laser-textured sheet is one of most important to understand its ability in extending material ductility and to appropriately control this technique. Experimental investigations are carried out in this paper to study the macroscopic behaviour and microstructural mechanism of the laser-textured sheet, and comparison is made with the normal sheet taken from the same coil of metal sheet. It is demonstrated that, the difference in the behaviour of plastic instability obviously shows tendency to delay strain localization and the onset of thickness necking. Shear banding and internal void damage are spread to a much wider region in the sheet being laser-textured. The prestrained microcraters enforced on the surface of the textured sheet act as hardening spots, which are likely to share out deformation and inhibit the increasing rate of voiding, and eventually favouring the ductility of the material used.

Numerical analyses for the material bifurcation in plane sheet under tension

The various patterns (shear banding, surface wrinkling and necking) of material bifurcation in plane sheet under tension are investigated in this paper by means of a numerical method. It is found that numerical analysis can provide better ground for searching for the lowest critical loads. The inhomogeneity caused by void damage and the nonuniformity in the stress distribution across sheet thickness are proved to have detrimental effects on the material bifurcation. Nevertheless, material stability can be promoted by any means of depressing void damage or alleviating stress, even locally across the thickness. Besides, the peculiar behaviour of material bifurcation under slight biaxiality state is demonstrated. Copyright (C) 1996 Elsevier Science Ltd

Fatigue-crack closure measurements on 2024-t3 sheet specimens

A computer-controlled procedure has been developed for automatic measurement of the crack opening stress S-op during fatigue tests. A crack opening displacement gauge (GOD meter) is used to obtain digital data on the load versus COD curves. Three methods for deriving S-op from the data sets are compared: (1) a slope method, (2) a tangent lines intersecting method, and (3) a tangent point method. The effect of the position of the COD meter with respect to the crack tip on S-op is studied in tests of 2024-T3 specimens. Results of crack growth and S-op are presented for CA loading with an overload, and with an overload followed by an underload.

Formation of shear bands in plane sheet

The formation of shear bands in plane sheet is studied, both analytically and experimentally, to enhance the fundamental understanding of this phenomenon and to develop a capability for predicting material failure. The evolution of voids is measured and its interaction with the process of shear banding is examined. The evolving dilatancy in plasticity is shown to have a vital role in analysing the shear-band type of bifurcation, and tremendously reduces the theoretical value of critical stresses. The analyses, referring to both localized and diffuse modes of bifurcation, fairly explain the corresponding observations obtained through testing a dual-phase steer sheet and provide a justification of the constitutive model used.

Transient Temperature Distribution in a Sheet Metal by Low-Energy Laser Scanning

Low-energy laser-heating techniques are widely used in engineering applications such as, thinfilm deposition, surface treatment, metal forming and micro-structural pattern formation. In this paper,under the conditions of ignoring the thermo-mechanical coupling, a numerical simulation on the spatialand temporal temperature distribution in a sheet metal produced by the laser beam scanning in virtue of thefinite element method is presented. Both the three-dimensional transient temperature field and thetemperature evolution as a function of heat penetrating depth in the metal sheet are calculated. Thetemperature dependence of material properties was taken into account. It was shown that, after taking thetemperature dependence of the material absorbance effect into consideration, the temperature change ratealong the scanning direction and the temperature maximum were both increased.

Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching

Sapphire substrates patterned by a selective chemical wet and an inductively coupled plasma (ICP) etching technique was proposed to improve the performance of GaN-based light-emitting diodes (LEDs). GaN-based LEDs were fabricated on sapphire substrates through metal organic chemical vapor deposition (MOCVD). The LEDs fabricated on the patterned substrates exhibit improved device performance compared with the conventional LED fabricated on planar substrates when growth and device fabricating conditions were the same. The light output powers of the LEDs fabricated on wet-patterned and ICP-patterned substrates were about 37% and 17% higher than that of LEDs on planar substrates at an injection current of 20 mA, respectively. The enhancement is attributable to the combination of the improvement of GaN-based epilayers quality and the improvement of the light extraction efficiency. (c) 2008 Elsevier Ltd. All rights reserved.

Fabrication of nano-patterned sapphire substrates and their application to the improvement of the performance of GaN-based LEDs

Nano-patterned sapphire substrates (NPSSs) were fabricated by a chemical wet etching technology using nano-sized SiO2 as masks. The NPSS was applied to improve the performance of GaN-based light emitting diodes (LEDs). GaN-based LEDs on NPSSs were grown by metal organic chemical vapour deposition. The characteristics of LEDs grown on NPSSs and conventional planar sapphire substrates were studied. The light output powers of the LEDs fabricated on NPSSs were considerably enhanced compared with that of the conventional LEDs grown on planar sapphire substrates.

Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale

Sapphire substrates were patterned by a chemical wet etching technique in the micro- and nanoscale to enhance the light output power of InGaN/GaN light-emitting diodes (LEDs). InGaN/GaN LEDs on a pyramidal patterned sapphire substrate in the microscale (MPSS) and pyramidal patterned sapphire substrate in the nanoscale (NPSS) were grown by metalorganic chemical vapor deposition. The characteristics of the LEDs fabricated on the MPSS and NPSS prepared by wet etching were studied and the light output powers of the LEDs fabricated on the MPSS and NPSS increased compared with that of the conventional LEDs fabricated on planar sapphire substrates. In comparison with the planar sapphire substrate, an enhancement in output power of about 29% and 48% is achieved with the MPSS and NPSS at an injection current of 20 mA, respectively. This significant enhancement is attributable to the improvement of the epitaxial quality of GaN-based epilayers and the improvement of the light extraction efficiency by patterned sapphire substrates. Additionally, the NPSS is more effective to enhance the light output power than the MPSS. (c) 2008 American Institute of Physics.

Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE

Thick GaN films of high quality are directly grown on wet-etching patterned sapphire in a vertical hydride vapour phase epitaxy reactor. The optical and structural properties of GaN films are studied using scanning electronic microscopy and cathodoluminescence. Test results show that initial growth of hydride vapour phase epitaxy GaN occurs not only on the mesas but also on the two asymmetric sidewalls of the V-shaped grooves without selectivity. After the two-step coalescence near the interface, the GaN films near the surface keep on growing along the direction perpendicular to the long sidewall. Based on Raman results, GaN of the coalescence region in the grooves has the maximum residual stress and poor crystalline quality over the whole GaN film, and the coalescence process can release the stress. Therefore, stress-free thick GaN films are prepared with smooth and crack-free surfaces by this particular growth mode on wet-etching patterned sapphire substrates.