Enhanced activity of an In-Fe2O3/H-ZSM-5 catalyst for NO reduction with methane

Selective reduction of NO by CH4 on an In-Fe2O3/H-ZSM-5 catalyst was investigated in the presence of excess oxygen. Compared with In/H-ZSM-5, the In-Fe2O3/H-ZSM-5 catalyst with high Fe2O3 contents showed higher activity in a wide range of reaction temperatures. It was found that the addition of Fe2O3 yielded a promotion effect on CH4 activation. The influence of water vapor on NO conversion was also investigated. The activity of the In/H-ZSM-5 catalyst has been found to be strongly inhibited by water vapor, while the In-Fe2O3/H-ZSM-5 catalyst remained fairly active in the presence of 3.3% steam. (C) 2000 Elsevier Science B.V. All rights reserved.

Kinetics of the selective reduction of NO with CH4 over an In-Fe2O3/HZSM-5 catalyst

A kinetic model presented for the selective reduction of NO with CH4 over an InFe2O3/HZSM-5 catalyst by considering the process as a combination of two simultaneous reactions: NO+O2CH4 (reaction 1) and O-2+CH4 (reaction 2). Linear regression calculation was employed to find the kinetic parameters. It was found that although the activation energies of the two reactions were almost identical, the reaction rate constants were dramatically different, namely, k(1)much greater than k(2), indicating that the NO+O-2+CH4 reaction was more preferable to take place on the In-Fe2O3/HZSM-5 catalyst as compared with the O-2+CH4 reaction.

Effect of strontium substitution on the activity of La2-xSrxNiO4 (x=0.0-1.2) in NO decomposition

The aim of this work is to study the effect of Sr substitution on the redox properties and catalytic activity of La2-xSrxNiO4 (x = 0.0-1.2) for NO decomposition. Results suggest that the x = 0.6 sample shows the highest activity. The characterization (TPD, TPR, etc.) of samples indicates that the x = 0.6 sample possesses suitable abilities in both oxidation and reduction, which facilitates the proceeding of oxygen desorption and NO adsorption. At temperature below 700 degrees C, the oxygen desorption is difficult, and is the rate-determining step of NO decomposition. With the increase of reaction temperature (T > 700 degrees C), the oxygen desorption is favorable and, the active adsorption of NO on the active site (NO + V-o + Ni2+ -> NO--Ni3+) turns out to be the rate-determining step. The existence of oxygen vacancy is the prerequisite condition for NO decomposition, but its quantity does not relate much to the activity.

Effect of valence of copper in La2-xThxCuO4 on NO decomposition reaction

NO decomposition reaction was investigated over La2-xThxCuO4, in which the valence of copper was controlled by Th substitution and was characterized by XPS measurement. A close correlation between the valence of copper and the activity was observed. The activity increased with the decrease of the average oxidation number of copper, and increased with the increase of Cu+ content, suggesting that the transition metal with low valence (Cu+) is active for the reaction in the present cases.

Characterization and catalytic behavior of La2-x(Sr,Th)(x)CuO4+/-lambda in reaction NO+CO

Two mixed oxide systems La2-xSrxCuO4+/-lambda(0.0 less than or equal to x less than or equal to 1.0) and La2+xThxCuO4+/-lambda(0.0 less than or equal to x less than or equal to 0.4) with K2NiF4 structure were prepared by varying re values; Their crystal structures were studied by means of XRD and IR spectra. The average valence of Cu ion at B site, nonstoichiometric oxygen (A) and the chemical composition in the bulk and on the surface of the catalysts were measured by means of chemical analysis and XPS. The catalytic behavior in reaction CO + NO was investigated under the regular change of average valence of Cu ion at B site and nonstoichiometric oxygen (lambda). Meanwhile, the adsorption and activation of the small molecules NO and the mixture of NO + CO over the mixed oxide catalysts were studied by means of MS-TPD. The catalytic mechanism of reaction NO + CO over these oxide catalysts were proposed; and it has been found that, at lower temperatures the activation of NO is the rate determining step and the catalytic activity is related to the lower valent metallic ion and its concentration, while at higher temperatures the adsorption of NO is the rate determining step and the catalytic activity is related to the oxygen vacancy and its concentration.

FLOW-INJECTION ANALYSIS OF MYOGLOBIN AND HEMOGLOBIN AT TOLUIDINE BLUE CHEMICALLY MODIFIED ELECTRODE

Electrodeposition of the phenothiazine mediator titrant toluidine blue onto a glassy carbon substrate at an appropriate potential was used to construct a toluidine blue chemically modified electrode (CME) exhibiting electrocatalytic reduction for myoglobin and hemoglobin. The CME catalyzed the hemoprotein electroreduction at the reduction potential of the mediator molecule. When the CME as used as a detector for flow injection analysis at a constant applied potential of -0.30 V vs. a saturated calomel electrode, it gave detection limits of 20 and 50 ng (1.2 and 0.78 pmol) injected myoglobin and hemoglobin, respectively, with a dynamic linear concentration range over 2 orders of magnitude. After a brief equilibration period, the CME retained nearly 90% of its initial myoglobin response over 8 hours of continuous exposure to the flow-through system.

Studies on the regional feature of organic carbon in sediments off the Huanghe River Estuary waters

Organic carbon (OC) in definitely small area sediments(according to marine dimension)off the Huanghe River Estuary is investigated in order to evaluate the feature of regional difference of physical and chemical properties in marginal sea sediments. The distributions of OC in sediments with natural grain size and the relationship with the pH, Eh,Es and Fe3+/Fe2+ are discussed. In addition,OC decomposition rates in surfacial/subsurfacial sediments are estimated. OC concentrations range from 0.26% to 1.8%(wt)in the study area. Significant differences in OC content and in horizontal distribution as well as various trends in surfacial/subsurfacial sediments exhibit the feature of regional difference remarkably in marginal sea sediments. The complicated distribution of OC in surface sediments is due to the influence of bacterial activity and abundance, bioturbation of benthos and physical disturbance. The OC decomposition rate constant in surfacial/subsurfacial sediments ranges from 0.0097 to 0.076 a(-1) and the relatively high values may be mainly related to bacteria that are mainly responsible for OC mineralization;meio-and macrofauna affect OC degradation both directly, through feeding on it, and indirectly through bioturbation and at the same time coarse sediments are also disadvantageous to OC preservation. In almost all the middle and bottom sediments the contents of OC decrease with the increase of deposition depth, which indicates that mineralization of OC in the middle and bottom sediments has occurred via processes like SO42- reduction and Fe-oxide reduction.

Effects of techniques of implanting nitrogen into buried oxide on the characteristics of partially depleted SOIPMOSFET

Effects of techniques of implanting nitrogen into buried oxide on the characteristics of the partially depleted silicon-on-insulator (SOI) p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) have been studied with three different nitrogen implantation doses, 8 x 10(15), 2 x 10(16), and 1 x 10(17) cm(-2). The experimental results show that this technology can affect the threshold voltage, channel hole mobility and output characteristics of the partially depleted SOI PMOSFETs fabricated with the given material and process. For each type of the partially depleted SOI PMOSFET with nitrided buried oxide, the absolute value of the average threshold voltage increases due to the nitrogen implantation. At the same time, the average channel hole mobility decreases because of the nitrogen implantation. In particular, with the high nitrogen implantation doses, the output characteristic curves of the tested transistors present a distinct kink effect, which normally exists in the characteristic output curves of only partially depleted SOI NMOSFETs.

Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOIPMOSFET

The effect of implanting nitrogen into buried oxide on the top gate oxide hardness against total irradiation does has been investigated with three nitrogen implantation doses (8 x 10(15), 2 x 10(16) and 1 x 10(17) cm(-2)) for partially depleted SOI PMOSFET. The experimental results reveal the trend of negative shift of the threshold voltages of the studied transistors with the increase of nitrogen implantation dose before irradiation. After the irradiation with a total dose of 5 x 10(5) rad(Si) under a positive gate voltage of 2V, the threshold voltage shift of the transistors corresponding to the nitrogen implantation dose 8 x 10(15) cm(-2) is smaller than that of the transistors without implantation. However, when the implantation dose reaches 2 x 10(16) and 1 x 10(17) cm(-2), for the majority of the tested transistors, their top gate oxide was badly damaged due to irradiation. In addition, the radiation also causes damage to the body-drain junctions of the transistors with the gate oxide damaged. All the results can be interpreted by tracing back to the nitrogen implantation damage to the crystal lattices in the top silicon.

Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET

The effects, caused by the process of the implantation of nitrogen in the buried oxide layer of SIMOX wafer, on the characteristics of partially depleted silicon-on-insulator nMOSFET have been studied. The experimental results show that the channel electron mobilities of the devices fabricated on the SIMON (separation by implanted oxygen and nitrogen) wafers are lower than those of the devices made on the SIMOX (separation by implanted oxygen) wafers. The devices corresponding to the lowest implantation dose have the lowest mobility within the range of the implantation dose given in this paper. The value of the channel electron mobility rises slightly and tends to a limit when the implantation dose becomes greater. This is explained in terms of the rough Si/SiO2 interface due to the process of implantation of nitrogen. The increasing negative shifts of the threshold voltages for the devices fabricated on the SIMON wafers are also observed with the increase of implanting dose of nitrogen. However, for the devices fabricated on the SIMON wafers with the lowest dose of implanted nitrogen in this paper, their threshold voltages are slightly larger on the average than those prepared on the SIMOX wafers. The shifts are considered to be due to the increment of the fixed oxide charge in SiO2 layer and the change of the density of the interface-trapped charge with the value and distribution included. In particular, the devices fabricated on the SIMON wafers show a weakened kink effect, compared to the ones made on the SIMOX wafers.

Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density

In order to obtain greater radiation hardness for SIMOX (separation by implanted oxygen) materials, nitrogen was implanted into SIMOX BOX (buried oxide). However, it has been found by the C-V technique employed in this work that there is an obvious increase of the fixed positive charge density in the nitrogen-implanted BOX with a 150 out thickness and 4 x 10(15) cm(-2) nitrogen implantation dose, compared with that unimplanted with nitrogen. On the other hand, for the BOX layers with a 375 nm thickness and implanted with 2 x 10(15) and 3 x 10(15) cm(-2) nitrogen doses respectively, the increase of the fixed positive charge density induced by implanted nitrogen has not been observed. The post-implantation annealing conditions are identical for all the nitrogen-implanted samples. The increase in fixed positive charge density in the nitrogen-implanted 150 nm BOX is ascribed to the accumulation of implanted nitrogen near the BOX/Si interface due to the post-implantation annealing process according to SIMS results. In addition, it has also been found that the fixed positive charge density in initial BOX is very small. This means SIMOX BOX has a much lower oxide charge density than thermal SiO2 which contains a lot of oxide charges in most cases.