A study on the minority carrier diffusion length in n-type GaN films

The minority carrier diffusion length of n-type GaN films grown by metalorganic chemical vapor deposition (MOCVD) has been studied by measuring the surface photovoltaic (PV) spectra. It was found that the minority carrier diffusion length of undoped n-type GaN is considerably larger than that in lightly Si-doped GaN. However, the data suggested that the dislocation and electron concentration appear not to be responsible for the minority carrier diffusion length. It is suggested that Si doping plays an important role in decreasing the minority carrier diffusion length.

Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films

We investigate the effects of lightly Si doping on the minority carrier diffusion length in n-type GaN films by analyzing photovoltaic spectra and positron annihilation measurements. We find that the minority carrier diffusion length in undoped n-type GaN is much larger than in lightly Si-doped GaN. Positron annihilation analysis demonstrates that the concentration of Ga vacancies is much higher in lightly Si-doped GaN and suggests that the Ga vacancies instead of dislocations are responsible for the smaller minority carrier diffusion length in the investigated Si-doped GaN samples due to the effects of deep level defects. (c) 2006 American Institute of Physics.

分离扇回旋加速器的接受度及效率；Acceptance and efficiency of sector-separated cyclotron

以9.7MeV/u的238U36+,5.62MeV/u的70Zn10+为典型离子,分析并模拟了分离扇回旋加速器(SSC)的注入、加速和引出,得到了SSC在理论等时场下横向和纵向的接受度。为了研究SSC在实际情况下的接受度,在实测场的基础上采用Kr-Kb方法以及Lagrange插值方法建立了与实际比较符合的等时场,计算了该等时场下SSC横向和纵向的接受度,发现了导致SSC实际接受度和传输效率低的主要原因在于注入系统中的MSI3元件和引出系统中的MSE3元件设计存在缺陷。模拟结果显示,通过改变MSI3和MSE3的曲率或者垫铁改变元件内部的场分布可以改善SSC的实际接受度和传输效率。