Phase-matched high-order harmonic generation in a gas cell with midinfrared femtosecond pulses

We experimentally investigate the generation of high-order harmonics in a 4-mm-long gas cell using midinfrared femtosecond pulses at various wavelengths of 1240 nm, 1500 nm, and 1800 nm. It is observed that the yield and cutoff energy of the generated high-order harmonics critically depend on focal position, gas pressure, and size of the input beam which can be controlled by an aperture placed in front of the focal lens. By optimizing the experimental parameters, we achieve a cutoff energy at similar to 190 eV with the 1500 nm driving pulses, which is the highest for the three wavelengths chosen in our experiment.

Mode Simulation for Midinfrared Microsquare Resonators With Sloped Sidewalls and Confined Metals

EQUILATERAL-TRIANGLE; MU-M; LASERS; MICROLASERS; MICRODISK Abstract: Mode characteristics for midinfrared microsquare resonators with sloped sidewalls and confined metal layers are investigated by finite-difference time-domain (FDTD) techniques. For a microsquare with a side length of 10 mu m, the mode quality (Q)-factors of 8329, 4772, and 2053 are obtained for TM5,7 mode at wavelength 7.1 mu m by three-dimensional FDTD simulations, as the tilting angles of the side walls are 90 degrees, 88 degrees, and 86 degrees, respectively. Furthermore, microsquare resonators laterally surrounded by SiO2 and metal layers are investigated by the two-dimensional FDTD technique for the metal layers of Au, Ti-Au, Ag-Au, and Ti-Ag-Au, respectively.

GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers

Theoretical calculations of the mode characteristics of an equilateral-triangle resonator (ETR) with a 10 mu m cavity side length show that the fundamental mode, with longitudinal mode index of 25, has a wavelength of 2.185 mu m and a longitudinal mode separation of 100 nm. This mode has a quality factor (similar to 2x10(5)) that is much larger than the first (similar to 5x10(4)) and second (similar to 3x10(4)) order modes, indicating that single fundamental mode lasing should be accessible over a broad wavelength tuning range. An electrically injected ETR based on this design is fabricated from an InGaAsSb/AlGaAsSb/GaSb, graded-index separate-confinement heterostructure, laser diode wafer with a 2.1 mu m emission wavelength. This device achieved single mode, continuous wave operation at 77 K with a threshold current of 0.5 mA and a single mode wavelength tuning range of 3.25 nm, which is accomplished by varying the injection current from 0.5 to 6.0 mA. (C) 2008 American Vacuum Society.

SiO2 对Bi2O3-B2O3 玻璃体系光学、热学及结构的 影响

Glasses with compositions 50Bi2O3-xB2O3- (50-x)SiO2(x=0, 10, 20, 30, 40, 50) in mol% have been prepared by using a normal melt-quench technique. The effect of SiO2 addition on thermal stability, optical properties and structural characteristic on Bi2O3-B2O3 glass were systematically investigated by using XRD, DTA, ultraviolet-visible transmittance spectra, midinfrared transmittance spectra and Raman spectra. The experimental results demonstrate that, with the addition of SiO2, thermal stability of glass samples has been obviously improved. Once the amount of SiO2 is too much, the glass samples tend to be phase seperation which results in the decrease of thermal stability. With increasing SiO2 content, the UV cutoff edge firstly shifts to short-wave band and then shifts to long-wave band, and the transmittance of mid-infrared has been greatly improved. With substitution of SiO2 for B2O3, the [BO3] triangles and [BO4] tetrahedral groups are gradually replaced by [SiO4]. [BiO6] octahedral and [SiO4] tetrahedral units are connected forming a vibrational mode of Bi-O-Si. The physical chemistry and optical performance of Bi2O3-B2O3 glass were greatly improved by addition of SiO2.

Theoretical analysis of gate voltage-controlled subband states in an AlxGa1-xN/GaN heterostructure

The subband structure and inter-subband transition as a function of gate voltage are determined by solving the Schrodinger and Poisson equations self-consistently in an AlxGa1-xN/GaN heterostructure. Different aluminum mole fraction and thickness of AlxGa1-xN barrier are considered. Calculation results show that energy difference between the first and second subband covers a wide range (from several tens to hundreds milli-electron volt) by applying different gate voltage, which corresponds to the midinfrared and long-wave infrared wavelength scope. Furthermore, such a modulation on the subband transition energy is much more pronounced for the structure with thin barrier. When the applied positive gate voltage is increased, the triangle well formed at the interface turns to be deeper and narrower, which enhances the confinement for electrons. As a result, the overlap between electron wave function at two subbands increases, and thus the optical intersubband transition also enhances its intensity. This tendency is in good agreement with the available data in the literature. (c) 2005 Elsevier B.V. All rights reserved.